Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FIELD EFFECT TRANSISTOR CMT08N50 Search Results

    FIELD EFFECT TRANSISTOR CMT08N50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FIELD EFFECT TRANSISTOR CMT08N50 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Field Effect Transistor CMT08N50

    Abstract: CMT08N50 CMT08N50N220 CMT08N50N220FP
    Text: CMT08N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this


    Original     		CMT08N50 Field Effect Transistor CMT08N50 CMT08N50 CMT08N50N220 CMT08N50N220FP PDF

    CMT08N50

    Abstract: CMT08N50N220 CMT08N50N220FP
    Text: CMT08N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this


    Original     		CMT08N50 CMT08N50 CMT08N50N220 CMT08N50N220FP PDF

    Untitled

    Abstract: No abstract text available
    Text: CMT08N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this


    Original     		CMT08N50 PDF

    CMT08N50

    Abstract: No abstract text available
    Text: CMT08N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this


    Original     		CMT08N50 CMT08N50 PDF