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    FIELD DESFIRE Search Results

    FIELD DESFIRE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    FIELD DESFIRE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nfc antenna design guide

    Abstract: NXP s2c PN511 Antenna and RF Design Guide nfc antenna nfc antenna design P5CN072 PN512 NXP antenna design guide felica ISO 18092 DESFire change key examples
    Text: NXP Near Field Communication NFC for low cost portable electronic devices PN511 and PN512 Extensive proximity connectivity capabilities for portable electronic devices NXP Semiconductors’ PN511 and PN512 are highly integrated transceivers for contactless


    Original     		PDF PN511 PN512 PN512 56MHz. PN511) PN512) P5CN072) nfc antenna design guide NXP s2c PN511 Antenna and RF Design Guide nfc antenna nfc antenna design P5CN072 NXP antenna design guide felica ISO 18092 DESFire change key examples

    Untitled

    Abstract: No abstract text available
    Text: NXP Near Field Communication NFC controller PN532 for embedded devices Easy, secure connectivity Offering proximity connectivity for 13.56 MHz reader/writer applications in embedded devices, this highly integrated transmission module includes a microcontroller that reduces processing


    Original     		PDF PN532

    Proven NFC technology creates new opportunities in metering

    Abstract: No abstract text available
    Text: Near Field Communication for metering Proven NFC technology creates new opportunities in metering Enabling convenient, secure interaction with smart meters, NFC opens up a range of new applications from secure payment to manufacturing control and on-site maintenance.


    Original     		PDF

    NXP PN533

    Abstract: OM5588 PN533 Mifare Desfire protocol nfc module nxp NFC Forum Tag mifare active passive DESFire PN533 NFC Tag Types innovision jewel
    Text: NXP Near Field Communication NFC controller PN533 Extensive proximity connectivity capabilities for USB-enabled devices Operating at 13.56 MHz, this highly integrated, pin-compatible, and microcontroller-based transmission module provides USB-enabled devices with the most widely deployed contactless


    Original     		PDF PN533 80C51 NXP PN533 OM5588 PN533 Mifare Desfire protocol nfc module nxp NFC Forum Tag mifare active passive DESFire PN533 NFC Tag Types innovision jewel

    Untitled

    Abstract: No abstract text available
    Text: NX7002AK 60 V, single N-channel Trench MOSFET 13 December 2012 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX7002AK O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: BUK652R3-40C N-channel 40 V 2.3 mΩ intermediate level Automotive TrenchMOS FET Rev. 01 — 20 May 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET


    Original     		PDF BUK652R3-40C

    PN533

    Abstract: NXP PN533 Mifare reader remote antenna P5CN072 DESFire PN533 nfc antenna design NFC I2C felica nfc antenna NxP P5Cn072
    Text: NXP Near Field Communication NFC controller PN533 Extensive proximity connectivity capabilities for USB-enabled devices NXP Semiconductors’ PN533 is a highly integrated transmission module for contactless communication at 13.56 MHz including a microcontroller. It is specially designed to provide


    Original     		PDF PN533 PN533 P5CN072) 80C51 NXP PN533 Mifare reader remote antenna P5CN072 DESFire PN533 nfc antenna design NFC I2C felica nfc antenna NxP P5Cn072

    P5CN072

    Abstract: NxP PN532 nfc antenna design NXP DESFire PN532 PN532 nfc antenna felica nfc antenna design PN5321a3hn nfc module nxp
    Text: NXP Near Field Communication NFC for handheld devices and POS terminals PN532 Making secure connectivity easy NXP Semiconductors’ controller IC PN532 is a highly integrated transmission module including a microcontroller which reduces the processing power from the host controller.


    Original     		PDF PN532 PN532 56MHz P5CN072 NxP PN532 nfc antenna design NXP DESFire PN532 nfc antenna felica nfc antenna design PN5321a3hn nfc module nxp

    P5CN072

    Abstract: pn532 paypass nfc antenna nfc antenna design NxP PN532 PN5321a3hn NXP Bluetooth IC 13.56Mhz rf amplifier module NXP NFC
    Text: NXP Near Field Communication NFC for handheld devices and POS terminals PN532 Making secure connectivity easy NXP Semiconductors’ controller IC PN532 is a highly integrated transmission module including a microcontroller which reduces the processing power from the host controller.


    Original     		PDF PN532 PN532 56MHz P5CN072 paypass nfc antenna nfc antenna design NxP PN532 PN5321a3hn NXP Bluetooth IC 13.56Mhz rf amplifier module NXP NFC

    NX7002AK

    Abstract: smd code marking sot23 SMD MARKING QG 6 PIN
    Text: NX7002AK 60 V, single N-channel Trench MOSFET 10 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF NX7002AK O-236AB) NX7002AK smd code marking sot23 SMD MARKING QG 6 PIN

    PMPB27EP

    Abstract: MARKING CODE 1V TRANSISTOR SMD MARKING CODE 1v max10029
    Text: PMPB27EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB27EP DFN2020MD-6 OT1220) PMPB27EP MARKING CODE 1V TRANSISTOR SMD MARKING CODE 1v max10029

    marking code 1L

    Abstract: TRANSISTOR SMD MARKING CODE 1l
    Text: PMPB16XN 30 V, single N-channel Trench MOSFET 20 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB16XN DFN2020MD-6 OT1220) marking code 1L TRANSISTOR SMD MARKING CODE 1l

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PMV20XNE 30 V, N-channel Trench MOSFET 10 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV20XNE O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: SO T8 83 PMZ950UPE 20 V, P-channel Trench MOSFET 8 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMZ950UPE DFN1006-3 OT883)

    SOt23-3 footprint wave soldering

    Abstract: MARKING TR SOT23-3 P MOSFET
    Text: PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV185XN O-236AB) SOt23-3 footprint wave soldering MARKING TR SOT23-3 P MOSFET

    TRANSISTOR K 135 mosfet

    Abstract: No abstract text available
    Text: PMT200EN 100 V N-channel Trench MOSFET 25 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMT200EN OT223 SC-73) TRANSISTOR K 135 mosfet

    Untitled

    Abstract: No abstract text available
    Text: PMPB15XP 12 V, single P-channel Trench MOSFET 6 July 2012 Preliminary data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB15XP DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: PMPB43XPE 20 V, single P-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB43XPE DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 NX7002BK 60 V, N-channel Trench MOSFET 8 August 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX7002BK O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 6 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138AKA O-236AB) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV170UN O-236AB)

    marking code 1s

    Abstract: No abstract text available
    Text: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB33XP DFN2020MD-6 OT1220) marking code 1s

    TRANSISTOR SMD MARKING CODE QR

    Abstract: 2PMV65XP
    Text: PMV65XP 20 V, single P-channel Trench MOSFET 21 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV65XP O-236AB) TRANSISTOR SMD MARKING CODE QR 2PMV65XP

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138AKA O-236AB) AEC-Q101