RJFTV
Abstract: Kit38082 Kit38081NI RJF SFTP 5E 3050 JWT Connector Amphenol Assembly instructions RJ12 pcb mount connector RJFTV2 Kit38204NI rjf 21b scc
Text: NEW USB-A Field Spring Release RJF EZ RJF 544 NEW RJ Field RJF RB RJ Fast Self-closing cap USBBF TV NEW NEW RJF TV Rugged USB memory key NEW RJ Switch USB-A Field Atex Zone 2 Field Bus Range Reinforced Infocom Connectors for Harsh Environment RJ45 Field - RJ11 Field - RJ Switch - USB Field - FireWire Field - LC Field - MTRJ field
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RJF544:
DOC-000075-ANG
RJFTV
Kit38082
Kit38081NI
RJF SFTP 5E 3050
JWT Connector
Amphenol Assembly instructions
RJ12 pcb mount connector
RJFTV2
Kit38204NI
rjf 21b scc
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water level control circuit diagram
Abstract: 12v dc water pump water level sensor circuit diagram circuit diagram water level sensor water level control block diagram CIRCUIT DIAGRAM for LED TUBE LIGHT FOR HOME 12v dc motor water pump PUMP MOTOR water pump human detection sensors circuit
Text: Sensors Electric-Field Contactless Sensing Demonstrator FactSheet Description Electric-Field E-Field demonstrator presents contactless sensing of human touch and water level based on Freescale’s E-Field Imaging Device (MC33794). This application is controlled with a low cost 8-bit
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MC33794)
MC68HC908QB8
MC33794
water level control circuit diagram
12v dc water pump
water level sensor circuit diagram
circuit diagram water level sensor
water level control block diagram
CIRCUIT DIAGRAM for LED TUBE LIGHT FOR HOME
12v dc motor water pump
PUMP MOTOR
water pump
human detection sensors circuit
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AN211A
Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide
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AN211A/D
AN211A
AN211A
MPF102 JFET
MPF102 equivalent transistor
MPF102 Transistor
MPF102 JFET data sheet
2N3797
2N3797 equivalent
mpf102 fet
mpf102 equivalent P channel
2N4221 motorola
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2.2 k resistor
Abstract: MC33941 8080 interface with keyboard DEMO1985MC34940E MC33794 MC34940 Design Capacitive Key keyboard design human detection sensors circuit
Text: Freescale Semiconductor Application Note Document Number: AN3516 Rev. 0, 09/2007 E-field Keyboard Designs by: Michael Steffen Freescale Semiconductor 1 Introduction This application note provides the fundamentals for designing keyboards with electric field E-field devices
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AN3516
MC33794,
MC34940,
MC33941.
2.2 k resistor
MC33941
8080 interface with keyboard
DEMO1985MC34940E
MC33794
MC34940
Design Capacitive Key
keyboard design
human detection sensors circuit
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"Magnetic field angle sensor"
Abstract: Wheatstone Bridge ZMT32 TS16949 ka 494
Text: ZMT32 Magnetic Field Angle Sensor Description The ZMT32 is a thin film permalloy magnetic field sensor, which contains two galvanic isolated Wheatstone Bridges for high precision angle measurement applications under low field conditions. This angle sensor
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ZMT32
ZMT32
25kA/m)
D-81541
"Magnetic field angle sensor"
Wheatstone Bridge
TS16949
ka 494
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2N3797
Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide
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AN211A/D
AN211A
2N3797
MPF102 equivalent transistor
MPF102 JFET
mpf102 fet
2N3797 equivalent
2N4221 motorola
MPF102 Transistor
mpf102 application note
P-Channel Depletion Mode FET
JFET TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: FGH80N60FD 600 V Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and
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FGH80N60FD
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Untitled
Abstract: No abstract text available
Text: FGH80N60FD2 600 V Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses
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FGH80N60FD2
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Untitled
Abstract: No abstract text available
Text: FGH40N60SFD tm 600V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where
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FGH40N60SFD
100oC
FGH40N60SFD
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Untitled
Abstract: No abstract text available
Text: L9466 Car alternator voltage regulator Features • For air and liquid cooled applications ■ DF output inverted field monitor ■ Thermal protection ■ FIeld driver, lamp driver, relay driver, and DF (field monitor) short circuit protected ■ Load response control
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L9466
L9466
L9466N
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fgh40n60
Abstract: No abstract text available
Text: FGH40N60SMD_F085 600V, 40A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where
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FGH40N60SMD
175oC
AEC-Q101
fgh40n60
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FGH40N60SFD
Abstract: FGH40N60SFDTU igbt 400V 40A FGH40N60SF igbt 600V 20a
Text: FGH40N60SFD tm 600V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where
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FGH40N60SFD
FGH40N60SFD
FGH40N60SFDTU
igbt 400V 40A
FGH40N60SF
igbt 600V 20a
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CAR ALTERNATOR REGULATOR
Abstract: CAR ALTERNATOR VOLTAGE REGULATOR L9466N 5 pin alternator wiring Alternator regulator CAR ALTERNATOR data sheet pd CAR ALTERNATOR REGULATOR pdf file free download CAR ALTERNATOR alternator diode 1775 B l9466
Text: L9466 CAR ALTERNATOR VOLTAGE REGULATOR 1 FEATURES • FOR AIR AND LIQUID COOLED APPLICATIONS ■ DF OUTPUT INVERTED FIELD MONITOR ■ THERMAL PROTECTION ■ FIELD DRIVER, LAMP DRIVER, RELAY DRIVER, AND DF (FIELD MONITOR) SHORT CIRCUIT PROTECTED ■ LOAD RESPONSE CONTROL
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L9466
L9466N
L9466
CAR ALTERNATOR REGULATOR
CAR ALTERNATOR VOLTAGE REGULATOR
L9466N
5 pin alternator wiring
Alternator regulator
CAR ALTERNATOR data sheet pd
CAR ALTERNATOR REGULATOR pdf file free download
CAR ALTERNATOR
alternator diode 1775 B
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igbt 40a 600v
Abstract: No abstract text available
Text: FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate
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FGA20N120FTD
igbt 40a 600v
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din 17410
Abstract: 8309 magnetic head 2mm magnetic transistor wheatstone bridge with temp. sensor DIN17410 MAGNETIC HEAD circuit magnetic stripe ZMX40M ZMX40MT8TA
Text: ZMX40M DUAL MAGNETIC FIELD SENSOR DESCRIPTION This device is a special tangential field difference sensor with two AMR Anisotropic Magneto-Resistive bridges for field movement measurements or field comparative measurements. The ZMX40M contains two extremely sensitive magnetic
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ZMX40M
ZMX40M
suppres26100
din 17410
8309
magnetic head 2mm
magnetic transistor
wheatstone bridge with temp. sensor
DIN17410
MAGNETIC HEAD circuit
magnetic stripe
ZMX40MT8TA
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Untitled
Abstract: No abstract text available
Text: FGH40N60SFD 600 V, 40 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications
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FGH40N60SFD
100oC
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Untitled
Abstract: No abstract text available
Text: FGB20N60SFD 600V, 20A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Welder, UPS, SMPS and PFC applications where low conduction and
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FGB20N60SFD
O-263AB/D2-PAK
100oC
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Untitled
Abstract: No abstract text available
Text: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder,
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FGH40T100SMD
25oductor
FGH40T100SMD
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FGY75N60
Abstract: 8V45 smart ups 750 circuit
Text: FGY75N60SMD 600V, 75A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, Welder, SMPS and PFC applications where low
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FGY75N60SMD
FGY75N60SMD
Power-247
FGY75N60
8V45
smart ups 750 circuit
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MP-25
Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD
Text: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.
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NP40N06CLC
NP40N06DLC
NP40N06ELC
175dgree
027QMAX.
1000pF
O-220AB
O-262AA
O-220SMD
MP-25
NP40N06ELC
TO-220SMD
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MPF970
Abstract: MPF971 MPF910
Text: MPF970 silicon MPF971 SILICON P-CHANNEL JUNCTION FIELD—EFFECT TRANSISTORS P-CHANNEL Depletion Mode (Type A ) Junction Field-Effect Transistors designed for chopper and high-speed switching applications. JUNCTION FIELD-EFFECT TRANSISTORS M A XIM U M RATINGS
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MPF970
MPF971
MPF970
MPF971
MPF910
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MFE4007
Abstract: mfe 4010 MFE4010 3 DG 1008 MFE4008 MFE4009 MFE4011 MFE4012
Text: MFE4007 silicon MFE4012 thru P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS . . . depletion mode (Type A) Field-Effect Transistors designed for general-purpose amplifier applications. P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS • Tightly Specified loss Ranges — 2:1 for All Types
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MFE4007
MFE4012
MFE4007
mfe 4010
MFE4010
3 DG 1008
MFE4008
MFE4009
MFE4011
MFE4012
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MFE3020
Abstract: MFE3021
Text: MFE3020 silicon MFE3021 DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS (Type C) Enhancement Mode (Type C| MOS Field-Effect Transistors de signed primarily for low power, chopper or switching applications. Low Reverse Gate Current —
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MFE3020
MFE3021
MFE3021)
MFE3020
MFE3021
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 DESCRIPTION The KMZ11B1 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field
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KMZ11B1
KMZ11B1
MGD804
OT96-1
076E03S
MS-012AA
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