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9407A Abstract: FHK9407A "Field Effect Transistor" field effect transistor Text: P Channel Enhancement Mode Field Effect Transistor FHK9407A P Channel Enhancement Mode Field Effect Transistor DESCRIPTION & FEATURES 概述及特點 Low on-state resistance N-channel：RDS ON = 118mΩ@VGS = 10V. RDS(ON) = 150 mΩ@VGS = 4.5V. Super High dense cell design for extremely low RDS(ON).	Original	FHK9407A OT223 OT223 FHK9407A 9407A "Field Effect Transistor" field effect transistor	PDF

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9407A

Abstract: FHK9407A "Field Effect Transistor" field effect transistor
Text: P Channel Enhancement Mode Field Effect Transistor FHK9407A P Channel Enhancement Mode Field Effect Transistor DESCRIPTION & FEATURES 概述及特點 Low on-state resistance N-channel：RDS ON = 118mΩ@VGS = 10V. RDS(ON) = 150 mΩ@VGS = 4.5V. Super High dense cell design for extremely low RDS(ON).

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FHK9407A OT223 OT223 FHK9407A 9407A "Field Effect Transistor" field effect transistor

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