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    Untitled

    Abstract: No abstract text available
    Text: FG6K42060L FG6K42060L Silicon N-channel MOSFET FET1 Unit: mm Silicon P-channel MOSFET (FET2) For Switching • Features  Low drain-source ON resistance:RDS(on)typ. N-ch = 2 Ω （VGS = 4.0 V) P-ch:95 mΩ (VGS = -4.0 V)  Halogen-free / RoHS compliant


    Original     		PDF FG6K42060L UL-94 FG6K42060L SC-113DA

    FET2

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . FG6K4206 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview  Package FG6K4206 is the dual-type MOS FET (N-channel and P-channel) which is


    Original     		PDF 2002/95/EC) FG6K4206 FG6K4206 FET2

    MN864779

    Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
    Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.


    Original     		PDF A000021E MN864779 MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY