Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FF1200R12KE3 Search Results

    SF Impression Pixel

    FF1200R12KE3 Price and Stock

    Infineon Technologies AG FF1200R12KE3NOSA1

    IGBT MODULE 1200V 5000W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FF1200R12KE3NOSA1 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Rochester Electronics FF1200R12KE3NOSA1 3 1
    • 1 $1094.59
    • 10 $1094.59
    • 100 $1028.91
    • 1000 $930.4
    • 10000 $930.4
    Buy Now

    FF1200R12KE3 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FF1200R12KE3 Eupec IGBT-Modules Original PDF
    FF1200R12KE3 Eupec IGBT Module Original PDF
    FF1200R12KE3NOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE VCES 1200V 1200A Original PDF

    FF1200R12KE3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FF1200R12KE3

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF1200R12KE3 初步数据/PreliminaryData VCES = 1200V IC nom = 1200A / ICRM = 2400A 典型应用 • 三电平应用 • 高频开关应用 • 大功率变流器 • 电机传动 • 太阳能应用


    Original
    PDF FF1200R12KE3 BarcodeCode128 E83335) FF1200R12KE3

    Untitled

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules FF1200R12KE3 暫定データ/PreliminaryData VCES = 1200V IC nom = 1200A / ICRM = 2400A 一般応用 • 3レベル アプリケーション • 高周波スイッチングアプリケーション


    Original
    PDF FF1200R12KE3 BarcodeCode128 E83335)

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FF1200R12KE3 VorläufigeDaten/PreliminaryData VCES = 1200V IC nom = 1200A / ICRM = 2400A TypischeAnwendungen • 3-Level-Applikationen • AnwendungenmithohenSchaltfrequenzen • Hochleistungsumrichter


    Original
    PDF FF1200R12KE3

    FF1200R12KE3

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-Modules FF1200R12KE3 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage


    Original
    PDF FF1200R12KE3 FF1200R12KE3

    FF1200R12KE3

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-Modules FF1200R12KE3 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage


    Original
    PDF FF1200R12KE3 897E-01 452E-01 997E-02 647E-02 634E-02 451E-02 820E-03 850E-03 FF1200R12KE3

    bsm25gp120 b2

    Abstract: FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3
    Text: IGBT High Power Modules 1200 VCES 1200 VCES Type * Dual modules IH1/4 IH7 Single modules Standard 2. Generation FF400R12KF4 FF600R12KF4 FF800R12KF4 Low Loss 2. Generation FF400R12KL4C FF600R12KL4C FF800R12KL4C IGBT3 ◆ FF600R12KE3 FF800R12KE3 FF1200R12KE3


    Original
    PDF FF400R12KF4 FF600R12KF4 FF800R12KF4 FF400R12KL4C FF600R12KL4C FF800R12KL4C FF600R12KE3 FF800R12KE3 FF1200R12KE3 FZ800R12KS4 bsm25gp120 b2 FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3

    FF1200R12KE3

    Abstract: IGBT 1200A
    Text: Technische Information / technical information IGBT-Module IGBT-Modules FF1200R12KE3 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage


    Original
    PDF FF1200R12KE3 FF1200R12KE3 IGBT 1200A

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FF1200R12KE3 VorläufigeDaten/PreliminaryData VCES = 1200V IC nom = 1200A / ICRM = 2400A TypischeAnwendungen • 3-Level-Applikationen • AnwendungenmithohenSchaltfrequenzen • Hochleistungsumrichter


    Original
    PDF FF1200R12KE3

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


    Original
    PDF

    POWER SUPPLY BOARD 94V0

    Abstract: IGBT moduls 600A FS450R17KE3 eupec igbt FF300R12KE3 EUPEC DD 76 N 16 L 12K eupec igbt FF300R12KE3 FZ800R12KF4 eupec dd 76 n 12 l eupec fz600r12ke3
    Text: EiceDRIVER 2ED300C17-S 2ED300C17-ST Dual IGBT Treiber für Medium und High Power IGBTs Datenblatt und Applikation prepared by : M.Hornkamp date of publication: 16.05.2003 approved by :Reg.-Nr. 064-02 revision: 3.0 SN: 23925 Status: SN:24816 preliminary


    Original
    PDF 2ED300C17-S 2ED300C17-ST D-59581 POWER SUPPLY BOARD 94V0 IGBT moduls 600A FS450R17KE3 eupec igbt FF300R12KE3 EUPEC DD 76 N 16 L 12K eupec igbt FF300R12KE3 FZ800R12KF4 eupec dd 76 n 12 l eupec fz600r12ke3

    Ucesat

    Abstract: Switching Behaviour of IGBT Transistors 2ED300E17-S FF1200R12KE3 igbt modules Michael Hornkamp igbt3 rg 2ED300C17-S circuit diagram for igbt FZ2400R17KE3 IGBT structure
    Text: 80 1 Dynamic Voltage Rise Control, the Most Efficient Way to Control Turn – off Switching Behaviour of IGBT Transistors Piotr Luniewski, Uwe Jansen, Michael Hornkamp Abstract— The goal of this paper is to present a new approach for the control strategy of Trench-/Field-Stop IGBTs which


    Original
    PDF

    FS20R06XE3

    Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
    Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors


    Original
    PDF D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd

    10k resistor-datasheet

    Abstract: eupec fz600r12ke3 2ED300C17-S FS450R17KE3 FF300R12KE3 bsm150gt120dn2 AC to DC smps circuit diagram eupec fz600r12 FF1200R12KE3 eupec igbt FF300R12KE3
    Text: EiceDRIVER 2ED300C17-S 2ED300C17-ST Dual IGBT Driver for Medium and High Power IGBTs Datasheet and Application Note Prepared by : M.Hornkamp Date of publication: 16.05.2003 Approved by: Reg.Nr.064-02 Revision: 3.0 SN: 23925 Status: SN:24816 preliminary


    Original
    PDF 2ED300C17-S 2ED300C17-ST D-59581 10k resistor-datasheet eupec fz600r12ke3 2ED300C17-S FS450R17KE3 FF300R12KE3 bsm150gt120dn2 AC to DC smps circuit diagram eupec fz600r12 FF1200R12KE3 eupec igbt FF300R12KE3

    FS450R12KE3 S1

    Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
    Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.


    Original
    PDF E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120