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    FF 150 R 1200 KF IGBT Search Results

    FF 150 R 1200 KF IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation

    FF 150 R 1200 KF IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FF 150 R 1200 kf igbt

    Abstract: FF 50 R 12 KF2 FZ 300 R 06 KL IGBT module FZ circuit of six pack module igbt FS-100 r 12 FZ 75 IGBT FZ 1200 IGBT FZ 600 IGBT module FZ 1200
    Text: IGBT Standard Modules Type VCES V IGBT-Standardmodule IC A ICRM A VCEsat V ton µs ts µs tp = 1 ms tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. tf µs RthJC tvj max °C/W °C tvj=25°C per arm typ. Dual modules n FF 15 R 12 KF 1200 15 30 3,0 0,4 0,50 0,20


    Original     		PDF

    G1 TRANSISTOR

    Abstract: FF 150 R 1200 kf igbt FF600R12KF4 Transistor g1 IGBT 600V 600A JE 800 transistor
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2


    Original     		PDF A13/97 FF600R12KF4 G1 TRANSISTOR FF 150 R 1200 kf igbt FF600R12KF4 Transistor g1 IGBT 600V 600A JE 800 transistor

    FF600R12KF4

    Abstract: FF 150 R 1200 kf igbt IC600A
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2


    Original     		PDF A13/97 FF600R12KF4 FF 150 R 1200 kf igbt IC600A

    FF600R12KF4

    Abstract: igbt ff 75 r
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2


    Original     		PDF A13/97 FF600R12KF4 igbt ff 75 r

    FF600R12KF4

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2


    Original     		PDF A13/97 FF600R12KF4

    IGBT FF 300 r12

    Abstract: FF400R12KF4 FF400R12KF
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2


    Original     		PDF A15/97 FF400R12KF4 IGBT FF 300 r12 FF400R12KF4 FF400R12KF

    IGBT FF 300 r12

    Abstract: FF400R12KF4
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2


    Original     		PDF A15/97 IGBT FF 300 r12 FF400R12KF4

    IGBT FF 300

    Abstract: eupec module igbt FF 150 R 1200 kf igbt IGBT FF 300 R 06 KF2 FF 50 R 12 kf igbt Eupec fz 1200 r 12 IGBT FF 300 R 12 KF2 IGBT module FZ 1200 eupec FZ 800 R 16 FF 25 R 1200 KF
    Text: EUPEC IGBT modules tlE D • 34D32T7 00G134M 4*11 « U P E C Fast modules Type VcES lc IcRM V= V A V C E sat. to n RthJC ts tvj max Outline DC 1v| = tvi 2 5 °C, typ. 25 °C, typ. 25 °C, typ. u per arm 1 ms 25 °C, typ. A V us US us °c/w tv = = °c Dual modules


    OCR Scan     		PDF 00G1344 IGBT FF 300 eupec module igbt FF 150 R 1200 kf igbt IGBT FF 300 R 06 KF2 FF 50 R 12 kf igbt Eupec fz 1200 r 12 IGBT FF 300 R 12 KF2 IGBT module FZ 1200 eupec FZ 800 R 16 FF 25 R 1200 KF

    IGBT FF 300

    Abstract: eupec FZ 50 A 12 KF FZ 75 eupec FZ 800 R 16 fz 69 eupec FS 25 R 12 KL eupec igbt 400 A FZ200 Eupec fz 1200 r 12 50/R005 FZ
    Text: IGBT modules EUPEC 3 4 0 3 2 e!? D0DG122 MTE D 071 • UPEC Fast modules Type VcES V ► ► FF FF FF FF FF 15 25 25 50 50 FF 75 FF 75 FF 100 FF 100 FF 150 FF 150 FF 200 FF 200 FF 300 FZ 200 FZ 300 FZ 300 FZ 400 FZ 400 R 12 R 06 R 12 R 06 R 12 KF KF KF KF


    OCR Scan     		PDF D0DG122 IGBT FF 300 eupec FZ 50 A 12 KF FZ 75 eupec FZ 800 R 16 fz 69 eupec FS 25 R 12 KL eupec igbt 400 A FZ200 Eupec fz 1200 r 12 50/R005 FZ

    eupec FZ 50 A 12 KF

    Abstract: IGBT FF 300 fz 69 FZ 300 R 06 KL kl 50 eupec FZ 800 R 16 Eupec fz 1200 r 12 FZ15A10KN FF 75 R 1200 kl igbt eupec FS 25 R 12 KL
    Text: IGBT modules EUPEC 3 4 0 3 2 e!? D0DG122 MTE D 071 • UPEC Fast modules Type VcES V ► ► FF FF FF FF FF 15 25 25 50 50 FF 75 FF 75 FF 100 FF 100 FF 150 FF 150 FF 200 FF 200 FF 300 FZ 200 FZ 300 FZ 300 FZ 400 FZ 400 R 12 R 06 R 12 R 06 R 12 KF KF KF KF


    OCR Scan     		PDF D0DG122 eupec FZ 50 A 12 KF IGBT FF 300 fz 69 FZ 300 R 06 KL kl 50 eupec FZ 800 R 16 Eupec fz 1200 r 12 FZ15A10KN FF 75 R 1200 kl igbt eupec FS 25 R 12 KL

    FF 150 R 1200 kf igbt

    Abstract: IGBT FF 300 R 06 KF2 IGBT FF 300 FF 50 R 12 KF2 FZ 300 R 06 KL IGBT module FZ 1200 IGBT module FZ FF 75 R 1200 kl igbt FF 50 R 12 kf igbt Eupec fz 1200 r 12
    Text: EUPEC IGBT modules tlE D • 34D32T7 00G134M 4*11 « U P E C Fast modules Type VcES lc IcRM V= V A V C E sat. to n RthJC ts tvj max Outline DC 1v| = tvi 2 5 °C, typ. 25 °C, typ. 25 °C, typ. u per arm 1 ms 25 °C, typ. A V us US us °c/w tv = = °c Dual modules


    OCR Scan     		PDF 00G1344 FF 150 R 1200 kf igbt IGBT FF 300 R 06 KF2 IGBT FF 300 FF 50 R 12 KF2 FZ 300 R 06 KL IGBT module FZ 1200 IGBT module FZ FF 75 R 1200 kl igbt FF 50 R 12 kf igbt Eupec fz 1200 r 12

    FZ 77 1000

    Abstract: IGBT FZ 1200 FZ 77 FF R 1200 FZ200
    Text: IGBT modules VcES IC R M lc v CEsal to n ts tf R th J C Wj ' l l i • DC V A '• i * 2 5 °C . ty p t., = 2 5 °C , ty p 'v, 2 5 °C , ly p p e r a rm V us us MS ° C /W °c tp = 1 ms •vi = 2 5 °C A ty p Dual modules FF 15 R 12 KF 1200 15 30 3 0.4 0.5


    OCR Scan     		PDF

    IGBT FF 300 R 12 KF2

    Abstract: FZ 77 1000 igbt ff 75 r IGBT FZ 1200 FF 100 R 12 kf2 igbt FZ200
    Text: IGBT modules Type VcES le A V IcRM v C E sat. ton ts R th J C DC per arm = tvj max tv ,= tvi = tvi 1 rrs 25 °C, typ. 25 °C, typ. 25 °C, typ. 25 °C, typ. A V US |iS |JS °C/W °c tvi O utline Dual m odules 15 R 12 KF 1200 15 30 3 0,4 0,5 0,2 1 150 63 25 R 06 KF2


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: EUPEC IGBT modules b lE D • 34032^17 G00134S 32fl H U P E C Normal modules Type Vc e S IcRM lc A ^on ts tf R«hjc DC per arm tvj max = 25 °C, typ. tvj = 25 °C, typ. tvj V us US us °C/W °c 30 3 0,4 0,5 0,3 1 150 1 ms t,| = 25 °C, typ. A tp = V v C E sa t.


    OCR Scan     		PDF G00134S

    igbt power module FS 25 R 12 KF2

    Abstract: Eupec fz 1200 r 12 FD100 FZ200
    Text: EUPEC IGBT modules b lE D • 34032^7 0G 01345 3Efl M U P E C Normal modules Type VcES IcRM lc A Outline tv] = 25 ”C, typ. t«i = 25 °C, typ. tyj = 25 °C , typ. tv¡ A V US US us °C/W °c 150 59 = 25 °C, typ. 0,5 0,3 25 50 3 0,4 0,6 0,3 0,5 150 59 50


    OCR Scan     		PDF

    IGBT module FZ 1200

    Abstract: IGBT FZ 200 IGBT module FZ 400 FZ 800 R12 KF1 IGBT FZ 800 IGBT FZ 1200 kf1 IGBT FZ 1200 IGBT FZ 600 IGBT FZ 1000 RT200
    Text: IG BT-Mod ule IGBT modules Modules IGBT Typ Type V CES lc V A R ,h jc DC pro Zweig per arm par bras tv, max IS ° C /W °c 0: 0,088 0.089 ICRM v CEsat Ion ts tf i ms tv| = 25 °C, typ. lv| = 25 “C, typ. t»,= 2 5 °C, typ tv, 25 °C, typ A V us US Maßbild


    OCR Scan     		PDF 150R06KL 3403EeJ7 IGBT module FZ 1200 IGBT FZ 200 IGBT module FZ 400 FZ 800 R12 KF1 IGBT FZ 800 IGBT FZ 1200 kf1 IGBT FZ 1200 IGBT FZ 600 IGBT FZ 1000 RT200

    IGBT FZ 1200

    Abstract: IGBT FZ 600 IGBT FZ 1000
    Text: IGBT modules Single pack modules ISOTOP Type VceS lc IcRM = A ton = ts t»| = t, R th J C tv i = DC per arm tvj max tv i- tv i 1 ms 25 “ C, typ. 25 °C, typ. 25 "C, typ. 2 5 °C, typ. A V us us |iS °c/w °C *p V v C E sa t. Outline FZ 15 A 10 KN 1000 15


    OCR Scan     		PDF

    FZ 77 1000

    Abstract: FZ 77 FZ 79 IGBT FZ 1200 IGBT FZ 1000 IGBT FZ 600 Discrete IGBTS IGBT module FZ 1200 kl 4 F15A12gf
    Text: EUPEC IGBT modules blE T> m 34032^7 D00134fa •UPEC Single pack m odules ISOTOP Type VcES V lc A IcHM v CEsat ton ts = t, RthJC DC per arm = tp = 1 ms t v i- tvi tv ,= tv, 25 °C, typ. 25 °C, typ. 25 °C, typ. 25 °C, typ. A V US us us tvj max °C/W °c


    OCR Scan     		PDF D00134fa FZ 77 1000 FZ 77 FZ 79 IGBT FZ 1200 IGBT FZ 1000 IGBT FZ 600 Discrete IGBTS IGBT module FZ 1200 kl 4 F15A12gf

    M116

    Abstract: 300L-120
    Text: F U JI 1-Pack IGBT 1200 V 300 A 1MB/ 300L-120 M U M Ë ïïr a iÊ IGBT MODULE ( L series Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter fo r M otor Drive • AC and DC Servo Drive A m p lifie r


    OCR Scan     		PDF 300L-120 00A/jjs M116 300L-120

    25CC

    Abstract: "welding circuit " IGBT schematic power inverter
    Text: 2-Pack IGBT 1200 V 150 A FUJI S 'ïL S iü W IË IGBT MODULE L series • O utline D raw ings ■ Features • H igh S peed S w itching • Low S atu ra tio n V oltage • V o ltag e Drive ■ A p plica tio n s • In verter fo r M o to r Drive • AC and DC S ervo D rive A m p lifie r


    OCR Scan     		PDF

    KF103

    Abstract: J24-20 1MBI200L-120 M116 cd-5030 cd5030
    Text: FU JI 1-Pack IGBT 1200 V 200 A 1MBI200L-120 SUMÉETÚSOE IGBT MODULE L series Outline Drawings • Features • High Speed S w itching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter fo r M otor Drive • AC and DC Servo Drive A m p lifie r


    OCR Scan     		PDF 200L-120 KF103 J24-20 1MBI200L-120 M116 cd-5030 cd5030

    ITS35F12

    Abstract: ITS35F12P T0247
    Text: M ITEL S E M IC O N D U C T O R ITS35F12 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4719-2.3 DS4719-3.2 March 1999 Key Parameters The ITS35F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF ITS35F12 DS4719-2 DS4719-3 ITS35F12 T0247 ITS35F12P T0247

    Untitled

    Abstract: No abstract text available
    Text: 6MBI25L-120 25A IGBT ' Ë ± s < r7 - * i * = L - ) U (L SE R IE S) î ' Outline Drawings IG B T M O D U L E F e a tu re s High Sp eed Switching • f c & z . 'f Low Saturation Voltage • W E S E f t (M O S - ir — h f l l i i ) • Voltage Drive Variety of Pow er Capacity Series


    OCR Scan     		PDF 6MBI25L-120 I95t/RB9)

    IJP LC 300

    Abstract: 2MBI75L-120 M216 T151 T930
    Text: 2MBI75L-120 75A IGBT (L SERIES) -Jl> IGBT MODULE : Features • High Speed S w itching • l&tSiflWGE Low Saturation V oltage • « £ E K » ( M O S ^ - H U f i) • Voltage Drive Variety of Power Capacity Series : Applications <f —$ • A C , D C I f —& 7 > ' ?


    OCR Scan     		PDF 2MBI75L-120 11S19^ I95t/R89) Shl50 IJP LC 300 M216 T151 T930