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    GEX06971

    Abstract: No abstract text available
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P Vorläufige Daten / Preliminary Data 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 1.8 1.2 3.85 3.35 Area not flat 0.6 0.4 Chip position Approx. weight 0.5 g fex06306 GEX06971


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    PDF fex06306 GEX06971 OHF00330 GEX06971

    Q62703-Q516

    Abstract: diode SR 315
    Text: SFH 485 P SFH 485 P fex06306 GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● GaAIAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren


    Original
    PDF fex06306 Q62703-Q516 diode SR 315

    GEX06306

    Abstract: Q62703-Q516
    Text: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 0.8 0.4 2.54 mm spacing 1.8 1.2 Cathode 3.85 3.35 5.9 5.5 ø5.1 ø4.8 5.0 4.2 0.6 0.4 0.6 0.4 1.0 0.5 Chip position 29 27 fex06306 GEX06306 Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    Original
    PDF fex06306 GEX06306 OHR00949 OHR01893 GEX06306 Q62703-Q516

    GEX06306

    Abstract: Q62703-Q516 OHR01893
    Text: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 29 27 5.9 5.5 0.6 0.4 1.0 0.5 Chip position GEX06306 fex06306 0.8 0.4 2.54 mm spacing 1.8 1.2 Cathode 3.85 3.35 ø5.1 ø4.8 5.0 4.2 0.6 0.4 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    Original
    PDF GEX06306 fex06306 OHR00949 OHR01893 GEX06306 Q62703-Q516 OHR01893

    GEX06306

    Abstract: Q62703-Q516
    Text: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 29 27 5.9 5.5 0.6 0.4 1.0 0.5 Chip position GEX06306 fex06306 0.8 0.4 2.54 mm spacing 1.8 1.2 Cathode 3.85 3.35 ø5.1 ø4.8 5.0 4.2 0.6 0.4 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    Original
    PDF GEX06306 fex06306 OHR00949 OHR01893 GEX06306 Q62703-Q516

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SFH 485 P fex06306 GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche M erkm ale Features • • • • • • GaAIAs-IR-Lum ineszenzdiode, hergestellt


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