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    FETS Search Results

    FETS Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
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    FETS Price and Stock

    Fraenkische FETSX-10B.50

    FIPHEAT, ETFE, NW10, SPECIAL, BL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FETSX-10B.50 Bulk 1
    • 1 $763.16
    • 10 $763.16
    • 100 $763.16
    • 1000 $763.16
    • 10000 $763.16
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    Fraenkische FETSX-36B.25

    FIPHEAT, ETFE, NW36, SPECIAL, BL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FETSX-36B.25 Bulk 1
    • 1 $1295.68
    • 10 $1295.68
    • 100 $1295.68
    • 1000 $1295.68
    • 10000 $1295.68
    		Buy Now

    Fraenkische FETSX-29B.25

    FIPHEAT, ETFE, NW29, SPECIAL, BL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FETSX-29B.25 Bulk 1
    • 1 $1051.48
    • 10 $1051.48
    • 100 $1051.48
    • 1000 $1051.48
    • 10000 $1051.48
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    Fraenkische FETSX-12B.50

    FIPHEAT, ETFE, NW12, SPECIAL, BL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FETSX-12B.50 Bulk 1
    • 1 $887.78
    • 10 $887.78
    • 100 $887.78
    • 1000 $887.78
    • 10000 $887.78
    		Buy Now

    Fraenkische FETSX-07B.50

    FIPHEAT, ETFE, NW07, SPECIAL, BL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FETSX-07B.50 Bulk 1
    • 1 $397.84
    • 10 $397.84
    • 100 $397.84
    • 1000 $397.84
    • 10000 $397.84
    		Buy Now
    Find more FETS price and stock on Findchips.com

    FETS Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FETSX-07B.50 Fraenkische FIPHEAT, ETFE, NW07, SPECIAL, BL Original PDF
    FETSX-10B.50 Fraenkische FIPHEAT, ETFE, NW10, SPECIAL, BL Original PDF
    FETSX-12B.50 Fraenkische FIPHEAT, ETFE, NW12, SPECIAL, BL Original PDF
    FETSX-17B.50 Fraenkische FIPHEAT, ETFE, NW17, SPECIAL, BL Original PDF
    FETSX-23B.50 Fraenkische FIPHEAT, ETFE, NW23, SPECIAL, BL Original PDF
    FETSX-29B.25 Fraenkische FIPHEAT, ETFE, NW29, SPECIAL, BL Original PDF
    FETSX-36B.25 Fraenkische FIPHEAT, ETFE, NW36, SPECIAL, BL Original PDF
    FETSX-48B.25 Fraenkische FIPHEAT, ETFE, NW48, SPECIAL, BL Original PDF

    FETS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UCC3911 y UNITRODE PRELIMINARY Lithium-Ion Battery Protector FEATURES BLOCK DIAGRAM • Protects Sensitive Lithium-Ion Cells from Overcharging and Over-Discharging • Used for Two-Cell Lithium-Ion Battery Packs • No External FETs Required • Provides Protection Against


    OCR Scan     		PDF UCC3911 UCC3911 UCC3911.

    Untitled

    Abstract: No abstract text available
    Text: y UCC3958 -1/-2/-3/-4 UNITRODE PRELIMINARY Single Cell Lithium-Ion Battery Protection Circuit FEATURES • Protects Sensitive Lithium-Ion Cells Form Over Charging and Over Discharging • Dedicated for One Cell Applications • Does Not Require External FETs or Sense


    OCR Scan     		PDF UCC3958 150mV 300mV

    MG30G2YM1

    Abstract: LD30A
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance


    OCR Scan     		PDF MG30G2YM1 15AIN-SOURCE MG30G2YM1 LD30A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7179-4 MW50970196 TIM7179-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz


    OCR Scan     		PDF TIM5964-8SL TIM5964-8SL MW50750196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1414-4 MW50280196

    MG15D6EM1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG15D6EM1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance


    OCR Scan     		PDF MG15D6EM1 MG15D6EM1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF TPM1818-30 2-16G1B) MW40020196

    5964-16L

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 4 2 .5 d B m at 5.9 G H z to 6.4 G H z


    OCR Scan     		PDF TIM5964-16L MW50780196 5964-16L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan     		PDF TIM7785-16SL MW51130196 TIM7785-16SL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - G 1dB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM5964-8A 2-11D1B) at260

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		PDF TIM1415-2 MW50390196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 5.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7785-16 TIM7785-16

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan     		PDF TIM7179-7L MW50980196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1011-5 MW50110196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1112-4 MW50190196

    GW50

    Abstract: No abstract text available
    Text: MG30H2DM1 MG30H2YM1 GTR MODULE SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING A P P L I C A T I O N S . MOTOR CONTROL A P P L I C A T I O N S . • The Drain is Isolated from Case. • 2 MOS FETs are Built-in to 1 Package. • With Built-in Free Wieeling Diode .:


    OCR Scan     		PDF 12jjs MG30H2DM1 MG30H2YM1 205ft MG30H2YM1 G30H2DM G30H2YM GW50

    50920-1

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 6.4 GHz to 7.2 GHz • High gain - G 1dB = 6.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM6472-16 TIM6472-16 50920-1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 9.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM4450-16 UnW50530196 MW50530196 TPM4450-16

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 25 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 36 d B m a t 5.9 G H z to 6.4 G H z


    OCR Scan     		PDF TIM5964-4L MW50710196 TIM5964-4L

    UFNZ40

    Abstract: No abstract text available
    Text: UFNZ40 UFNZ42 POWER MOSFET TRANSISTORS 50 Volt, 0.028 Ohm N-Channel FEATURES DESCRIPTION • • • • C o m p a c t Plastic Package Fast S w itc h in g L o w D rive C urrent Ease o f Paralleling These lo w v o lta g e p o w e r M O S FETS have been designed fo r o p tim u m p e rfo rm a n c e in lo w


    OCR Scan     		PDF UFNZ40 UFNZ42 UFNZ40,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G 1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM5359-16 TIM5359-16

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7984-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 45.0 d B m at 7.9 G H z to 8 .4 G H z


    OCR Scan     		PDF TIM7984-30L 2-16G1B) MW51160196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM0910-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 6.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM0910-10 2-11C1B) MW50050196