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    FET TRANSISTOR FT Search Results

    FET TRANSISTOR FT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    FET TRANSISTOR FT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ENN8366

    Abstract: CPH5903 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET
    Text: CPH5903 Ordering number : ENN8366 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon FET CPH5903 High-Frequency Amplifier. AM Amplifier Applications Features • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


    Original     		CPH5903 ENN8366 CPH5903 2SK1740-equivalent 2SC2812-equivalent ENN8366 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET PDF

    t2406 MOTOROLA

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount MEDIUM POWER TM OS FET 700 mA 240 VOLTS This TM OS medium power field effect transistor is designed for


    OCR Scan     		MMFT2406T1 OT-223 b3b755S t2406 MOTOROLA PDF

    marking 1a

    Abstract: CPH5901 2SC4639 2SK932 82786
    Text: CPH5901 Ordering number : ENN8278A TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


    Original     		CPH5901 ENN8278A CPH5901 2SK932 2SC4639, marking 1a 2SC4639 82786 PDF

    TA3705

    Abstract: No abstract text available
    Text: CPH5901 Ordering number : ENN8278A CPH5901 Features • • • TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


    Original     		ENN8278A CPH5901 CPH5901 2SK932 2SC4639, TA3705 PDF

    2SK458

    Abstract: 2SK45
    Text: tr m & m m M O S « # * * * ''* ? - h 9 M O S Field Effect Pow er Transistor 2SK458 N f t ^ ' 0r7 - M O S FET X 'f dUfls X i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK458ii, FET PACKAGE DIMENSIONS Unit : mm T*, iS S & D C


    OCR Scan     		2SK458 2SK458Ã 2SK458 2SK45 PDF

    transistor k 4212 fet

    Abstract: S211S NE23383B
    Text: PRELIMINARY DATA SHEET_ \ | F f ~ / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Hereto Junction FET that utilizes the {Unit : mm


    OCR Scan     		NE23383B NE23383B transistor k 4212 fet S211S PDF

    TC-2329A

    Abstract: F16V 2SJ207 IEI-1213 iei-1209
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHAIMNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con­


    OCR Scan     		2SJ207 2SJ207, TC-2329A F16V 2SJ207 IEI-1213 iei-1209 PDF

    NE334501

    Abstract: transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor NE334S01 low noise FET NEC U
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.


    OCR Scan     		NE334S01 NE334S01 NE334501 transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor low noise FET NEC U PDF

    t2406 MOTOROLA

    Abstract: No abstract text available
    Text: f MOTOROLA Order this document by MMFT2406T1/D SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount MEDIUM POWER TMOS FET 700 mA


    OCR Scan     		MMFT2406T1/D OT-223 MMFT2406T1 t2406 MOTOROLA PDF

    a1034

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR ¿¿PA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The /¿PA1552B is N-channel Power MOS FET Array that built in 4 circuits designed, for solenoid, motor and


    OCR Scan     		uPA1552B PA1552B PA1552BH a1034 PDF

    mosfet L 3055 motorola

    Abstract: FT3055E sot-223 body marking D K Q F
    Text: O rder this data sheet by M M FT3055ET1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount MMFT3055ET1 Motorola Preferred Device This advanced E-FET is a TMOS Medium Power MOSFET designed


    OCR Scan     		FT3055ET1/D OT-223 2PHX31317F-0 MMFT3055ET1/D mosfet L 3055 motorola FT3055E sot-223 body marking D K Q F PDF

    2SJ202

    Abstract: 2SK1580 T100 T200
    Text: MOS FIELD EFFECT TRANSISTOR 2SJ202 P-CHANNEL MOS FET FOR SWITCHING The 2SJ202 is an P-channel vertical type MOS FET w hich can be OUTLINE DIMENSIONS Unit : mm driven by 2.5 V power supply. 2.1 ± 0.1 As the MOS FET is driven by low voltage and does n o t require con­


    OCR Scan     		2SJ202 2SK1580 T100 T200 PDF

    lg smd transistor LF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor In a plastic envelope suitable for surface mounting using ’trench’ technology.


    OCR Scan     		BUK9621-30 SQT404 lg smd transistor LF PDF

    sot-223 body marking D K Q F

    Abstract: No abstract text available
    Text: O rder th is data sheet by MMFT1N10ET1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount M M FT1N10ET1 Motorola Preferred Device This advanced E-FET is a TMOS Medium Power MOSFET designed


    OCR Scan     		MMFT1N10ET1/D OT-223 2PHX33491F-0 N10ET1/D MMFT1N10FT1/D sot-223 body marking D K Q F PDF

    Untitled

    Abstract: No abstract text available
    Text: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J HIGH FREQUENCY AMPLIFIER APPLICATIONS AM HIGH FREQUENCY AMPLIFIER APPLICATIONS AUDIO FREQUENCY AMPLIFIER APPLICATIONS Unit in mm MAXIMUM RATINGS Ta = 25°C


    Original     		HN3G01J 100mA, PDF

    p-channel jfet rf

    Abstract: No abstract text available
    Text: Preliminary Data Sheet BIPOLAR ANALOG INTEGRATED CIRCUIT PC835MN-KAA J-FET INPUT LOW-POWER DUAL OPERATIONAL AMPLIFIER The μPC835 is a J-FET input low-power operational amplifier featuring low offset voltage and stable AC operating characteristics . NEC's unique high-speed PNP transistor fT = 300 MHz in the output stage solves the oscillation


    Original     		PC835MN-KAA PC835 Rs100, p-channel jfet rf PDF

    Untitled

    Abstract: No abstract text available
    Text: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications Unit in mm Absolute Maximum Ratings Ta = 25°C


    Original     		HN3G01J PDF

    u92 surface mount u92 transistor

    Abstract: t2406 MOTOROLA
    Text: Order this data sheet by MMFT2406T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M M FT2406T1 N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high


    OCR Scan     		MMFT2406T1/D OT-223 U--92 u92 surface mount u92 transistor t2406 MOTOROLA PDF

    tf 044

    Abstract: 2SK490 JE 33 HT - 0886 b0236 HT 0886
    Text: HEC j M O S Field Effect P ow er Transistor _ 2SK490 N - ^ * ; i ^ N 0r7 - M O S FET i i f f l N-Channel M OS Field Effect Power Transistor Switching Industrial Use 2SK490ii, N f - M O S FET W B 0 / P A C K A G E D IM EN SION S Unit: mm < , 4 X -y - f - >


    OCR Scan     		2SK490 2SK490Ã CycleS50 tf 044 2SK490 JE 33 HT - 0886 b0236 HT 0886 PDF

    NEC 2705 L 107

    Abstract: IC LA 4127 NEC Ga FET marking L NEC 2705 NEC 3552 L to Ku BAND LOW NOISE AMPLIFIER low noise FET NEC U NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The N E32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		NE32484A E32484A NEC 2705 L 107 IC LA 4127 NEC Ga FET marking L NEC 2705 NEC 3552 L to Ku BAND LOW NOISE AMPLIFIER low noise FET NEC U NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET PDF

    NE42484C

    Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		NE42484C NE42484C 42484C E42484C-SL NE42484C-T1 transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET PDF

    2SC2812

    Abstract: 2SK1740 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965
    Text: Ordering number : ENN7021 FC21 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET FC21 High-Frequency Amplifier, AM tuner RF Amplifier Applications • Package Dimensions The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package,


    Original     		ENN7021 2SK1740 2SC2812 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 PDF

    NE42484A

    Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		NE42484A NE42484A NE42484A-SL NE42484A-T1 transistor NEC D 986 ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor PDF

    transistor NEC D 822 P

    Abstract: nec gaas fet marking NEC Ga FET transistor ne425s01
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent


    OCR Scan     		NE425S01 NE425S01 NE425S01-T1 transistor NEC D 822 P nec gaas fet marking NEC Ga FET transistor ne425s01 PDF