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    FET TRANSISTOR Search Results

    FET TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    FET TRANSISTOR Price and Stock

    VPT Components JANTX2N6661

    MOSFETs N CHANNEL MOSFET-TRANSISTORS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI JANTX2N6661 Bulk 2,662 1
    • 1 $76.43
    • 10 $76.43
    • 100 $76.43
    • 1000 $76.43
    • 10000 $76.43
    		Buy Now

    FET TRANSISTOR Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FET / Transistor Guide NEC Transistor Selection Guide Original PDF

    FET TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Pch MOS FET

    Abstract: US6M2 TUMT6
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.


    Original     		PDF 85Max. 15Max. Pch MOS FET US6M2 TUMT6

    QS6M4

    Abstract: TSMT6 Pch MOS FET m04 fet
    Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.


    Original     		PDF

    IL062

    Abstract: IL062N TL062C IL062D il0621
    Text: TECHNICAL DATA IL062 Low Power J-FET DUAL OPERATIONAL AMPLIFIERS The IL062 is high speed J-FET input dual operational amplifier. This J-FET input operational amplifier incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.


    Original     		PDF IL062 IL062 012AA) IL062N TL062C IL062D il0621

    il0621

    Abstract: IL062 TL062C IL062N IL062D
    Text: TECHNICAL DATA IL062 Low Power J-FET DUAL OPERATIONAL AMPLIFIERS The IL062 is high speed J-FET input dual operational amplifier. This J-FET input operational amplifier incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.


    Original     		PDF IL062 IL062 012AA) il0621 TL062C IL062N IL062D

    2sc5922

    Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
    Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability


    Original     		PDF 200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982

    JAPAN transistor

    Abstract: 30v N channel MOS FET 2SK3019 ON503
    Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating


    Original     		PDF 2SK3019 100mA) JAPAN transistor 30v N channel MOS FET ON503

    Untitled

    Abstract: No abstract text available
    Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating


    Original     		PDF 2SK3019 100mA)

    Untitled

    Abstract: No abstract text available
    Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating


    Original     		PDF 2SK3019 100mA)

    HA17084

    Abstract: ha17080 equivalent HA17082 DP-14 HA17080 HA17080A HA17082A HA17083 HA17083A HA17084A
    Text: HA17080 Series J-FET Input Operational Amplifiers Description Since J-FET input operational amplifiers are formed from a pair of J-FET transistors, they provide superlative characteristics, including a high input impedance and a low input bias current. Thus they can be


    Original     		PDF HA17080 HA17080, HA17083 HA17084 ha17080 equivalent HA17082 DP-14 HA17080A HA17082A HA17083A HA17084A

    ENN8366

    Abstract: CPH5903 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET
    Text: CPH5903 Ordering number : ENN8366 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon FET CPH5903 High-Frequency Amplifier. AM Amplifier Applications Features • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


    Original     		PDF CPH5903 ENN8366 CPH5903 2SK1740-equivalent 2SC2812-equivalent ENN8366 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET

    TL062

    Abstract: No abstract text available
    Text: UTC TL062 LINEAR INTEGRATED CIRCUIT LOW POWER DUAL J-FET OPERATIONAL AMPLIFIER DESCRIPTION The TL062 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit. The device features high


    Original     		PDF TL062 TL062 QW-R105-003

    pin diagram of ic tl082

    Abstract: l0828 tl0828 L082 TL082 OF IC TL082 tl082 equivalent ic TL082AC TL082BC TL082C
    Text: UTC TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER SOP-8 DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.


    Original     		PDF TL082 TL082 Gain-of-10 100pF QW-R105-019 100KHZ pin diagram of ic tl082 l0828 tl0828 L082 OF IC TL082 tl082 equivalent ic TL082AC TL082BC TL082C

    Untitled

    Abstract: No abstract text available
    Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.


    Original     		PDF QS6U24 QS6U24

    TL072 PIN DIAGRAM

    Abstract: tl072 equivalent tl072 cl 50W linear power amplifier tl072 TL072AC TL072BC TL072C Contek Microelectronics S-100W
    Text: TL072 LINEAR INTEGRATED CIRCUIT LOW NOISE DUAL J-FET OPERATIONAL AMPLIFIER DESCRIPTION The ContekTL072 is a high speed J- FET input dual operational amplifier. It incorporates well matched , high voltage J- FET and bipolar transistors in a monolithic integrated circuit. The device features high


    Original     		PDF TL072 ContekTL072 TL072 PIN DIAGRAM tl072 equivalent tl072 cl 50W linear power amplifier tl072 TL072AC TL072BC TL072C Contek Microelectronics S-100W

    QS5U27

    Abstract: IR 240 FET
    Text: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U27 combines Pch MOS FET with a


    Original     		PDF QS5U27 QS5U27 IR 240 FET

    QS6U24

    Abstract: No abstract text available
    Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.


    Original     		PDF QS6U24 QS6U24

    Untitled

    Abstract: No abstract text available
    Text: QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U23 combines Pch MOS FET with a


    Original     		PDF QS5U23 QS5U23

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    L082

    Abstract: pin diagram of ic tl082 IC TL082 l0828 TL082 tl082 equivalent ic OF IC TL082 QW-R105-019
    Text: UTC TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER SOP-8 DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.


    Original     		PDF TL082 TL082 QW-R105-019 L082 pin diagram of ic tl082 IC TL082 l0828 tl082 equivalent ic OF IC TL082

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE DEVICES INC 3SE D •! Ö3bb011 0002317 0 * S S I N-FET 28.0 100 0.077 SFF140V N-FET 18.0 200 0.180 SFF240V N-FET 10.0 400 0.550 SFF340V N-FET 8.0 500 0.850 SFF440V N-FET 30.0 100 0.055 SFF150V N-FET 30.0 200 0.085 SFF250V N-FET 15.0 400 0.300


    OCR Scan     		PDF 3bb011 SFF140V SFF240V SFF340V SFF440V SFF150V SFF250V SFF350V SFF450V SFF9130V

    TLO84

    Abstract: TLO84C tl0b4c tl 0841 TL084MGC TL084M TL0848 TL064AC TL064BC TL064IDP
    Text: THOMSON SEMICONDUCTORS TL084 TL084A TL084B J-FET IN PU T Q U A D OP-AM Ps J-FET INPUT Q U A D OP-AM Ps The TL0B4, TL084A and TL084B are high speed J-FET input quad operational amplifiers incorporating well matched, high voltage J-FET and bipolar transistors


    OCR Scan     		PDF TL084 TL084A TL084B TL084, TL084A TL084B ILLR54 LU84A CB-511 TLO84 TLO84C tl0b4c tl 0841 TL084MGC TL084M TL0848 TL064AC TL064BC TL064IDP

    093.216

    Abstract: 2sk2974 093.941 transistor 2sk2974
    Text: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. INDEX MARK BOTTOM (TOP) FEATURES • High power gain:Gpe>8.4dB


    OCR Scan     		PDF 2SK2974 2SK2974 450MHz 30dBm 600mA 093.216 093.941 transistor 2sk2974

    2SK2973

    Abstract: 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284
    Text: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES * High power gain:Gpe>13dB « VDD=9.6V,f=450MHz,Pin= 17dBm * High efficiency:55% typ.


    OCR Scan     		PDF 2SK2973 2SK2973 450MHz 17dBm OT-89 OT-89 Conditi38 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284

    tlo71

    Abstract: TL071IC TL071M TL071 TL071C TL071 PIN DIAGRAM transistor t18 FET TL071A TL071AC TL071B
    Text: THOMSON SEMICONDUCTORS TL071 TL071A TL071B LOW NOISE J-FET IN PUT SINGLE OP-AM Ps The TL071, TL071A and TL071B are high speed J-FET input operational ampli­ fiers incorporating well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.


    OCR Scan     		PDF TL071 TL071A TL071B TL071B TL071 TL071A CB-11 tlo71 TL071IC TL071M TL071C TL071 PIN DIAGRAM transistor t18 FET TL071AC