pa1556ah
Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET
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O-251/-252,
O-220/-262
SC-96
SC-95
SC-96
OT-23)
D10702EJAV0PF00
pa1556ah
PA1501H
nec PA1501H
PA1556A
PA1550H
PA1556
PA1522H
uPA1712
pa1560h
2sk3326
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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D1406
Abstract: 2SK3300 MP-88
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3300 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3300 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics,
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2SK3300
2SK3300
D1406
MP-88
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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2N6661
Abstract: No abstract text available
Text: 2N6661 90V N-channel Enhancement - Mode Vertical DMOS FET 7.95 Transistors MO. Page 1 of 1 Enter Your Part # Home Part Number: 2N6661 Online Store 2N6661 Diodes 90V N -channel Enhancement - Mode Vertical DMOS FET Transistors Integrated Circuits Optoelectronics
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2N6661
2N6661
com/2n6661
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2N6659
Abstract: No abstract text available
Text: 2N6659 60V Vdss N-Channel FET field Effect Transistor 11.69 Transistors MOSFETs . Page 1 of 1 Enter Your Part # Home Part Number: 2N6659 Online Store 2N6659 Diodes 60V Vdss N -Channel FET (field Effect Transistor) Transistors Integrated Circuits Optoelectronics
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2N6659
2N6659
com/2n6659
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Untitled
Abstract: No abstract text available
Text: 2SK2904-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-3P High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK2904-01
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2SK2906-01
Abstract: No abstract text available
Text: 2SK2906-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-3P High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK2906-01
2SK2906-01
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2SK3324
Abstract: MP-88
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3324 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3324 is N-Channel MOS FET device that features a PART NUMBER PACKAGE 2SK3324 TO-3P Low gate charge and excellent switching characteristics, and
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2SK3324
2SK3324
MP-88
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2SK3304
Abstract: D1399 MP-88 DSA002270
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3304 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3304 is N-Channel MOS FET device that features a PART NUMBER PACKAGE 2SK3304 TO-3P Low gate charge and excellent switching characteristics, and
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2SK3304
2SK3304
D1399
MP-88
DSA002270
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D2008UK
Abstract: No abstract text available
Text: TetraFET D2008UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED 8.89 0.35 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max.
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D2008UK
400MHz
D2008UK
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2SK3324
Abstract: MP-88
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3324 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3324 is N-Channel MOS FET device that features a PART NUMBER PACKAGE 2SK3324 TO-3P Low gate charge and excellent switching characteristics, and
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2SK3324
2SK3324
MP-88
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Untitled
Abstract: No abstract text available
Text: PA07PA07 • PA07A • PA07A PA07, PA07A FET Input Power Operational Amplifier FEATURES • LOW BIAS CURRENT — FET Input • PROTECTED OUTPUT STAGE — Thermal Shutoff • EXCELLENT LINEARITY — Class A/B Output • WIDE SUPPLY RANGE — ±12V TO ±50V
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PA07A
100kHz
PA07U
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2SK3324
Abstract: MP-88
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3324 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3324 is N-Channel MOS FET device that features a PART NUMBER PACKAGE 2SK3324 TO-3P Low gate charge and excellent switching characteristics, and
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2SK3324
2SK3324
MP-88
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capacitor .1m 100v
Abstract: pa07 Apex pa07 apex PA07A
Text: PA07PA07 • PA07A • PA07A PA07, PA07A FET Input Power Operational Amplifier FEATURES • LOW BIAS CURRENT — FET Input • PROTECTED OUTPUT STAGE — Thermal Shutoff • EXCELLENT LINEARITY — Class A/B Output • WIDE SUPPLY RANGE — ±12V TO ±50V
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PA07A
PA07A
100kHz
PA07U
PA07U
capacitor .1m 100v
pa07
Apex pa07
apex PA07A
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D2008UK
Abstract: No abstract text available
Text: TetraFET D2008UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED 8.89 0.35 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035)
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D2008UK
400MHz
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Untitled
Abstract: No abstract text available
Text: TetraFET D2008UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED 8.89 0.35 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035)
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D2008UK
400MHz
400Mismatch
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d2206
Abstract: D2206UK
Text: TetraFET D2206UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz SINGLE ENDED 8.51 0.34 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 12.70
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D2206UK
d2206
D2206UK
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D2008UK
Abstract: No abstract text available
Text: TetraFET D2008UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED 8.89 0.35 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035)
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D2008UK
400MHz
D2008UK
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60w audio amplifier circuit diagram
Abstract: No abstract text available
Text: PA07PA07 • PA07A • PA07A PA07, PA07A FET Input Power Operational Amplifier FEATURES • LOW BIAS CURRENT — FET Input • PROTECTED OUTPUT STAGE — Thermal Shutoff • EXCELLENT LINEARITY — Class A/B Output • WIDE SUPPLY RANGE — ±12V TO ±50V
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PA07A
PA07A
100kHz
PA07U
60w audio amplifier circuit diagram
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D1877
Abstract: 2SK4092 2SK4092-A MP-88
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4092 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK4092
2SK4092
MP-88)
2SK4092-A
D1877
2SK4092-A
MP-88
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Untitled
Abstract: No abstract text available
Text: PA07PA07 • PA07A • PA07A PA07, PA07A FET Input Power Operational Amplifier FEATURES • • • • • LOW BIAS CURRENT — FET Input PROTECTED OUTPUT STAGE — Thermal Shutoff EXCELLENT LINEARITY — Class A/B Output WIDE SUPPLY RANGE — ±12V TO ±50V
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PA07A
100kHz
PA07U
PA07U
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D1426
Abstract: 2SK3324 MP-88
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3324 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3324 is N-channel DMOS FET device that features PART NUMBER PACKAGE 2SK3324 TO-3P a low gate charge and excellent switching characteristics, and
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2SK3324
2SK3324
D1426
MP-88
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toshiba fet
Abstract: No abstract text available
Text: Features and Structure POWER MOS FET Power MOS FET 1 Outstanding switching and frequency characteristics without carrier storage effect. (2) Ragged without current concentration. (3) Low driving power due to voltage-controlling device. (4) Easy parallel connections.
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2SK2267)
2SK1489)
OT-89)
toshiba fet
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