2SK3305
Abstract: 2SK3305-S 2SK3305-ZJ MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3305 TO-220AB 2SK3305-S TO-262 2SK3305-ZJ TO-263
|
Original
|
PDF
|
2SK3305
2SK3305
O-220AB
2SK3305-S
O-262
2SK3305-ZJ
O-263
O-220AB)
2SK3305-S
2SK3305-ZJ
MP-25
|
D1426
Abstract: 2SK3325 2SK3325-S 2SK3325-ZJ MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3325 is N-Channel DMOS FET device that features PART NUMBER PACKAGE 2SK3325 TO-220AB 2SK3325-S TO-262 2SK3325-ZJ TO-263
|
Original
|
PDF
|
2SK3325
2SK3325
O-220AB
2SK3325-S
O-262
2SK3325-ZJ
O-263
O-220AB)
O-220AB,
D1426
2SK3325-S
2SK3325-ZJ
MP-25
|
NEC k 3654
Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
|
Original
|
PDF
|
NE850R599A
NE850R599A
CODE-99
NEC k 3654
gl 7445
nec k 813
nec 8725
gm 8562
5942
A 7601 0549
|
2SK3458
Abstract: 2SK3458-S 2SK3458-ZJ MP-25
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3458 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3458 is N-channel DMOS FET device that features PART NUMBER PACKAGE 2SK3458 TO-220AB 2SK3458-S TO-262
|
Original
|
PDF
|
2SK3458
2SK3458
O-220AB
2SK3458-S
O-262
2SK3458-ZJ
O-263
2SK3458-S
2SK3458-ZJ
MP-25
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3456 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3456 is N-channel DMOS FET device that features PART NUMBER PACKAGE 2SK3456 TO-220AB 2SK3456-S TO-262
|
Original
|
PDF
|
2SK3456
2SK3456
2SK3456-S
2SK3456-ZJ
O-220AB
O-262
O-263
|
2SK3305
Abstract: 2SK3305-S 2SK3305-ZJ MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3305 is N-channel DMOS FET device that PART NUMBER PACKAGE 2SK3305 TO-220AB 2SK3305-S TO-262 2SK3305-ZJ TO-263 features a low gate charge and excellent switching
|
Original
|
PDF
|
2SK3305
2SK3305
O-220AB
2SK3305-S
O-262
2SK3305-ZJ
O-263
O-220AB)
2SK3305-S
2SK3305-ZJ
MP-25
|
AN569
Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high
|
Original
|
PDF
|
MTP12N06EZL/D
MTP12N06EZL
MTP12N06EZL/D*
AN569
MTP12N06EZL
mosfet transistor 400 volts.100 amperes
|
2SK3456
Abstract: 2SK3456-S 2SK3456-ZJ MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3456 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3456 is N-channel DMOS FET device that PART NUMBER PACKAGE 2SK3456 TO-220AB 2SK3456-S TO-262 2SK3456-ZJ TO-263 features a low gate charge and excellent switching
|
Original
|
PDF
|
2SK3456
2SK3456
O-220AB
2SK3456-S
O-262
2SK3456-ZJ
O-263
2SK3456-S
2SK3456-ZJ
MP-25
|
rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
|
Original
|
PDF
|
REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
|
2SK3111
Abstract: 2SK3111-S 2SK3111-ZJ MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3111 TO-220AB 2SK3111-S TO-262 2SK3111-ZJ TO-263 features a low on-state resistance and excellent
|
Original
|
PDF
|
2SK3111
2SK3111
O-220AB
2SK3111-S
O-262
2SK3111-ZJ
O-263
2SK3111-S
2SK3111-ZJ
MP-25
|
2SK3116
Abstract: 2SK3116-S 2SK3116-ZJ MP-25 2SK3116-S equivalent
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3116 is N-channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3116 TO-220AB 2SK3116-S TO-262 2SK3116-ZJ TO-263 low gate charge and excellent switching characteristics, and
|
Original
|
PDF
|
2SK3116
2SK3116
O-220AB
2SK3116-S
O-262
2SK3116-ZJ
O-263
2SK3116-S
2SK3116-ZJ
MP-25
2SK3116-S equivalent
|
2SK3458-ZK
Abstract: 2SK3458 2SK3458-S MP-25 220AB
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3458 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3458 TO-220AB 2SK3458-S TO-262 2SK3458-ZK TO-263 low gate charge and excellent switching characteristics,
|
Original
|
PDF
|
2SK3458
2SK3458
O-220AB
2SK3458-S
O-262
2SK3458-ZK
O-263
2SK3458-ZK
2SK3458-S
MP-25
220AB
|
2SK3109-ZJ
Abstract: MP-25 2SK3109 2SK3109-S
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3109 TO-220AB 2SK3109-S TO-262 2SK3109-ZJ TO-263 features a low on-state resistance and excellent
|
Original
|
PDF
|
2SK3109
2SK3109
O-220AB
2SK3109-S
O-262
2SK3109-ZJ
O-263
2SK3109-ZJ
MP-25
2SK3109-S
|
2SK3109
Abstract: 2SK3109-S 2SK3109-ZJ MP-25 D13332EJ2V0DS00
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3109 TO-220AB 2SK3109-S TO-262 2SK3109-ZJ TO-263 features a low on-state resistance and excellent
|
Original
|
PDF
|
2SK3109
2SK3109
O-220AB
2SK3109-S
O-262
2SK3109-ZJ
O-263
2SK3109-S
2SK3109-ZJ
MP-25
D13332EJ2V0DS00
|
|
|
Untitled
Abstract: No abstract text available
Text: 4.0V to 5.5V, 0.8A 1ch Synchronous Buck Converter integrated FET BD8966FVM Key Specifications Input voltage range: Output voltage range: Output current: Switching frequency: Pch FET ON resistance: Nch FET ON resistance: Standby current:
|
Original
|
PDF
|
BD8966FVM
BD8966FVM
|
Untitled
Abstract: No abstract text available
Text: Datasheet 2.5V to 5.5V, 0.3A 1ch Synchronous Buck Converter integrated FET BD9122GUL Key Specifications Input voltage range: Output voltage range: Output current: Switching frequency: Pch FET ON resistance: Nch FET ON resistance: Standby current:
|
Original
|
PDF
|
BD9122GUL
BD9122GUL)
|
RDX050N50
Abstract: voltage 10v mos fet Z diode
Text: RDX050N50 Transistors 10V Drive Nch MOS FET RDX050N50 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.
|
Original
|
PDF
|
RDX050N50
O-220FM
RDX050N50
voltage 10v mos fet
Z diode
|
RDX045N60
Abstract: No abstract text available
Text: RDX045N60 Transistors 10V Drive Nch MOS FET RDX045N60 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.
|
Original
|
PDF
|
RDX045N60
O-220FM
RDX045N60
|
RDN050N20
Abstract: No abstract text available
Text: RDN050N20 Transistors 10V Drive Nch MOS FET RDN050N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.
|
Original
|
PDF
|
RDN050N20
O-220FN
RDN050N20
|
RDN120N25
Abstract: No abstract text available
Text: RDN120N25 Transistors 10V Drive Nch MOS FET RDN120N25 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.
|
Original
|
PDF
|
RDN120N25
O-220FN
RDN120N25
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
|
OCR Scan
|
PDF
|
NE850R599A
NE850R599A
CODE-99
|
cd 1619 CP AUDIO
Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
|
OCR Scan
|
PDF
|
NE850R599A
NE850R599A
CODE-99
cd 1619 CP AUDIO
cd 1691 cp
IC cd 1619 CP
ic HT 8970
cd 1619 CP
of cd 1619 cp
ic SL 1626
HT 25-19
5942
nec 8725
|
NE850R5
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
|
OCR Scan
|
PDF
|
NE850R5
NE850R599
CODE-99
|
63000-000
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
|
OCR Scan
|
PDF
|
NE850R5
E850R599
CODE-99
63000-000
|
