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    FET MARKING CODES NEC Search Results

    FET MARKING CODES NEC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    54LS190/BEA Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy

    FET MARKING CODES NEC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NEC Relay Date Codes

    Abstract: FET marking codes NEC MARKING codes nec gaas fet marking
    Text: DATA SHEET Solid State Relay OCMOS FET PS7241-2B 8-PIN SOP, 400 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 2-ch Optical Coupled MOS FET DESCRIPTION The PS7241-2B is a solid state relay containing GaAs LEDs on the light emitting side input side and normally


    Original     		PS7241-2B PS7241-2B PS7241-2B-F3, E72422 NEC Relay Date Codes FET marking codes NEC MARKING codes nec gaas fet marking PDF

    Untitled

    Abstract: No abstract text available
    Text: bq3050 www.ti.com SLUSA92B – JANUARY 2011 – REVISED OCTOBER 2013 2-Series, 3-Series, and 4-Series Li-Ion Battery Pack Manager Check for Samples: bq3050 FEATURES APPLICATIONS • • • • 1 • • • • • • • • • • Fully Integrated 2-Series, 3-Series, and 4Series Li-Ion or Li-Polymer Cell Battery Pack


    Original     		bq3050 SLUSA92B PDF

    FET marking codes

    Abstract: FET MARKING CODE S20 marking diode JESD625-A SC-101
    Text: PMZ1000UN N-channel TrenchMOS standard level FET Rev. 2 — 17 September 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PMZ1000UN FET marking codes FET MARKING CODE S20 marking diode JESD625-A SC-101 PDF

    BUK9875-100A/CUX

    Abstract: No abstract text available
    Text: BUK9875-100A N-channel TrenchMOS logic level FET Rev. 02 — 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9875-100A BUK9875-100A/CUX PDF

    987510

    Abstract: FET marking codes BUK9875-100A FET MARKING CODE SC-73 marking 64
    Text: BUK9875-100A N-channel TrenchMOS logic level FET Rev. 02 — 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9875-100A 987510 FET marking codes BUK9875-100A FET MARKING CODE SC-73 marking 64 PDF

    FET marking codes

    Abstract: No abstract text available
    Text: SO T4 16 PMR400UN N-channel TrenchMOS ultra low level FET Rev. 2 — 2 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.


    Original     		PMR400UN FET marking codes PDF

    nxp 544

    Abstract: FET marking codes
    Text: SO T4 16 PMR280UN N-channel TrenchMOS ultra low level FET Rev. 2 — 3 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.


    Original     		PMR280UN nxp 544 FET marking codes PDF

    PMV45EN

    Abstract: FET marking codes pmv45en Power and Industrial Semiconductors 03AK
    Text: SO T2 3 PMV45EN N-channel TrenchMOS logic level FET Rev. 2 — 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PMV45EN 771-PMV45EN-T/R PMV45EN FET marking codes pmv45en Power and Industrial Semiconductors 03AK PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T2 23 BUK9875-100A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9875-100A PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK968R3-40E N-channel TrenchMOS logic level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		BUK968R3-40E OT404 PDF

    BUK761R7-40E

    Abstract: No abstract text available
    Text: BUK761R7-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		BUK761R7-40E OT404 BUK761R7-40E PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK768R1-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		BUK768R1-40E OT404 PDF

    Untitled

    Abstract: No abstract text available
    Text: DP AK BUK7277-55A N-channel TrenchMOS standard level FET 12 June 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK7277-55A PDF

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK7675-55A N-channel TrenchMOS standard level FET 25 August 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK7675-55A PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK762R0-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		BUK762R0-40E OT404 PDF

    PMV45EN

    Abstract: No abstract text available
    Text: SO T2 3 PMV45EN N-channel TrenchMOS logic level FET Rev. 2 — 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PMV45EN PMV45EN PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK765R3-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		BUK765R3-40E OT404 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK764R0-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		BUK764R0-40E OT404 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq3055 www.ti.com SLUSA91B – OCTOBER 2010 – REVISED OCTOBER 2013 2-Series, 3-Series, and 4-Series Li-Ion Battery Pack Manager Check for Samples: bq3055 FEATURES APPLICATIONS • • • • 1 • • • • • • • • • Fully Integrated 2-Series, 3-Series, and 4Series Li-Ion or Li-Polymer Cell Battery Pack


    Original     		bq3055 SLUSA91B PDF

    98055

    Abstract: No abstract text available
    Text: SO T2 23 BUK9880-55 N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9880-55 98055 PDF

    915055 transistor

    Abstract: 915055
    Text: SO T2 23 BUK98150-55 N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK98150-55 915055 transistor 915055 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK762R9-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		BUK762R9-40E OT404 PDF

    Untitled

    Abstract: No abstract text available
    Text: DP AK BUK9214-30A N-channel TrenchMOS logic level FET Rev. 3 — 14 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9214-30A PDF

    marking code m4 SMD Transistor

    Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23 fet SMD CODE PACKAGE SOT23 smd code marking HD SOT23
    Text: SO T2 3 PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PMV31XN O-236AB) 771-PMV31XN-T/R PMV31XN marking code m4 SMD Transistor NXP TRANSISTOR SMD MARKING CODE SOT23 fet SMD CODE PACKAGE SOT23 smd code marking HD SOT23 PDF