2N7002 NXP MARKING
Abstract: ON5520 fet SMD CODE PACKAGE SOT23 2n7002 nxp FET marking codes smd diode 2n7002 marking code 2N7002 smd TRANSISTOR code marking 05 sot23
Text: ON5520 N-channel TrenchMOS FET Rev. 01 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
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ON5520
O-236AB)
2N7002
ON5520
2N7002 NXP MARKING
fet SMD CODE PACKAGE SOT23
2n7002 nxp
FET marking codes
smd diode 2n7002 marking code
smd TRANSISTOR code marking 05 sot23
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Untitled
Abstract: No abstract text available
Text: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV31XN
O-236AB)
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PMV45EN
Abstract: No abstract text available
Text: Product specification PMV45EN N-channel TrenchMOS logic level FET Rev. 2 — 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PMV45EN
PMV45EN
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PMV45EN
Abstract: FET marking codes pmv45en Power and Industrial Semiconductors 03AK
Text: SO T2 3 PMV45EN N-channel TrenchMOS logic level FET Rev. 2 — 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PMV45EN
771-PMV45EN-T/R
PMV45EN
FET marking codes pmv45en
Power and Industrial Semiconductors
03AK
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FET marking codes
Abstract: PMF3800SN transistor sc-70 marking codes
Text: PMF3800SN N-channel TrenchMOS standard level FET Rev. 03 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PMF3800SN
PMF3800SN
FET marking codes
transistor sc-70 marking codes
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PMV45EN
Abstract: No abstract text available
Text: SO T2 3 PMV45EN N-channel TrenchMOS logic level FET Rev. 2 — 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PMV45EN
PMV45EN
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FET marking codes
Abstract: FET MARKING CODE S20 marking diode JESD625-A SC-101
Text: PMZ1000UN N-channel TrenchMOS standard level FET Rev. 2 — 17 September 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PMZ1000UN
FET marking codes
FET MARKING CODE
S20 marking diode
JESD625-A
SC-101
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BUK9875-100A/CUX
Abstract: No abstract text available
Text: BUK9875-100A N-channel TrenchMOS logic level FET Rev. 02 — 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9875-100A
BUK9875-100A/CUX
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987510
Abstract: FET marking codes BUK9875-100A FET MARKING CODE SC-73 marking 64
Text: BUK9875-100A N-channel TrenchMOS logic level FET Rev. 02 — 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9875-100A
987510
FET marking codes
BUK9875-100A
FET MARKING CODE
SC-73
marking 64
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FET marking codes
Abstract: No abstract text available
Text: SO T4 16 PMR400UN N-channel TrenchMOS ultra low level FET Rev. 2 — 2 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
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PMR400UN
FET marking codes
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NEC Relay Date Codes
Abstract: FET marking codes NEC MARKING codes nec gaas fet marking
Text: DATA SHEET Solid State Relay OCMOS FET PS7241-2B 8-PIN SOP, 400 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 2-ch Optical Coupled MOS FET DESCRIPTION The PS7241-2B is a solid state relay containing GaAs LEDs on the light emitting side input side and normally
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PS7241-2B
PS7241-2B
PS7241-2B-F3,
E72422
NEC Relay Date Codes
FET marking codes
NEC MARKING codes
nec gaas fet marking
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nxp 544
Abstract: FET marking codes
Text: SO T4 16 PMR280UN N-channel TrenchMOS ultra low level FET Rev. 2 — 3 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
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PMR280UN
nxp 544
FET marking codes
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Untitled
Abstract: No abstract text available
Text: DP AK BUK9214-30A N-channel TrenchMOS logic level FET Rev. 3 — 14 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9214-30A
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marking code m4 SMD Transistor
Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23 fet SMD CODE PACKAGE SOT23 smd code marking HD SOT23
Text: SO T2 3 PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV31XN
O-236AB)
771-PMV31XN-T/R
PMV31XN
marking code m4 SMD Transistor
NXP TRANSISTOR SMD MARKING CODE SOT23
fet SMD CODE PACKAGE SOT23
smd code marking HD SOT23
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Untitled
Abstract: No abstract text available
Text: SO T2 23 BUK9875-100A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9875-100A
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Untitled
Abstract: No abstract text available
Text: BUK968R3-40E N-channel TrenchMOS logic level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK968R3-40E
OT404
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BUK761R7-40E
Abstract: No abstract text available
Text: BUK761R7-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK761R7-40E
OT404
BUK761R7-40E
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Untitled
Abstract: No abstract text available
Text: BUK768R1-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK768R1-40E
OT404
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Untitled
Abstract: No abstract text available
Text: DP AK BUK7277-55A N-channel TrenchMOS standard level FET 12 June 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7277-55A
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Untitled
Abstract: No abstract text available
Text: D2 PA K BUK7675-55A N-channel TrenchMOS standard level FET 25 August 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7675-55A
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Untitled
Abstract: No abstract text available
Text: BUK762R6-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK762R6-40E
OT404
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Untitled
Abstract: No abstract text available
Text: BUK762R0-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK762R0-40E
OT404
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Untitled
Abstract: No abstract text available
Text: BUK765R3-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK765R3-40E
OT404
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Untitled
Abstract: No abstract text available
Text: BUK764R0-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK764R0-40E
OT404
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