CDFP2-F10
Abstract: M38510/10101 m38510/11401 GDFP1-F10 E43 marking MIL-STD-883 method 5003 macy1-x8
Text: INCH-POUND MIL-M-38510/114B 20 August 2003 SUPERSEDING MIL-M-38510/114A 09 November 1979 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON Reactivated after 20 August 2003 and may be used for either new or existing design acquisitions.
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MIL-M-38510/114B
MIL-M-38510/114A
MIL-PRF-38535.
CDFP2-F10
M38510/10101
m38510/11401
GDFP1-F10
E43 marking
MIL-STD-883 method 5003
macy1-x8
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Untitled
Abstract: No abstract text available
Text: OPA1652 OPA1654 Burr-Brown Audio SBOS477 – DECEMBER 2011 www.ti.com Low Noise and Distortion, General-Purpose, FET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1652, OPA1654 FEATURES DESCRIPTION • Low Noise: 4.5 nV/√Hz at 1 kHz • Low Distortion: 0.00005% at 1 kHz
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OPA1652
OPA1654
SBOS477
OPA1652,
OPA1652
OPA1654
OPA16i
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OP1652
Abstract: OP1654
Text: OPA1652 OPA1654 Burr-Brown Audio SBOS477 – DECEMBER 2011 www.ti.com Low Noise and Distortion, General-Purpose, FET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1652, OPA1654 FEATURES DESCRIPTION • Low Noise: 4.5 nV/√Hz at 1 kHz • Low Distortion: 0.00005% at 1 kHz
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OPA1652
OPA1654
SBOS477
OPA1652,
OPA1652
OPA1654
OPA16com/clocks
OP1652
OP1654
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OP1652
Abstract: No abstract text available
Text: OPA1652 OPA1654 Burr-Brown Audio SBOS477 – DECEMBER 2011 www.ti.com Low Noise and Distortion, General-Purpose, FET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1652, OPA1654 FEATURES DESCRIPTION • Low Noise: 4.5 nV/√Hz at 1 kHz • Low Distortion: 0.00005% at 1 kHz
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OPA1652
OPA1654
SBOS477
OPA1652,
OPA1652
OPA1654
OPA16com/clocks
OP1652
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OP1652
Abstract: No abstract text available
Text: OPA1652 OPA1654 Burr-Brown Audio SBOS477 – DECEMBER 2011 www.ti.com Low Noise and Distortion, General-Purpose, FET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1652, OPA1654 FEATURES DESCRIPTION • Low Noise: 4.5 nV/√Hz at 1 kHz • Low Distortion: 0.00005% at 1 kHz
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OPA1652
OPA1654
SBOS477
OPA1652,
SO-14
TSSOP-14
OP1652
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A102 A106 A107 C103 C109 C114
Abstract: A114 esh IOR 5B1 mdb25 philips r360 2n3904, itt BAR54 foxconn 82443GX 2D6 SOT-23
Text: A B C D E Intel 100MHz Pentium R II processor/440GX AGPset Dual-Processor Customer Reference Schematics 4 Revision 1.0 4 PAGE TITLE COVER SHEET 1 BLOCK DIAGRAM 2 SLOT 1 CONNECTOR 3,4,5,6 CLK SYNTHESIZER 7 82443GX 8,9,10 FET SWITCHES 11,12 DIMM SOCKETS 13,14,15,16
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100MHz
processor/440GX
82443GX
FM5-62
440GX
A102 A106 A107 C103 C109 C114
A114 esh
IOR 5B1
mdb25
philips r360
2n3904, itt
BAR54
foxconn
82443GX
2D6 SOT-23
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OP1652
Abstract: No abstract text available
Text: OPA1652 OPA1654 Burr-Brown Audio SBOS477 – DECEMBER 2011 www.ti.com Low Noise and Distortion, General-Purpose, FET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1652, OPA1654 FEATURES DESCRIPTION • Low Noise: 4.5 nV/√Hz at 1 kHz • Low Distortion: 0.00005% at 1 kHz
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OPA1652
OPA1654
SBOS477
OPA1652,
OPA1652
OPA1654
OPA16com/clocks
OP1652
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OP1652
Abstract: No abstract text available
Text: OPA1652 OPA1654 Burr-Brown Audio SBOS477 – DECEMBER 2011 www.ti.com Low Noise and Distortion, General-Purpose, FET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1652, OPA1654 FEATURES DESCRIPTION • Low Noise: 4.5 nV/√Hz at 1 kHz • Low Distortion: 0.00005% at 1 kHz
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OPA1652
OPA1654
SBOS477
OPA1652,
OPA1652
OPA1654
OPA16com/clocks
OP1652
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Untitled
Abstract: No abstract text available
Text: OPA1652 OPA1654 Burr-Brown Audio SBOS477 – DECEMBER 2011 www.ti.com Low Noise and Distortion, General-Purpose, FET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1652, OPA1654 FEATURES DESCRIPTION • Low Noise: 4.5 nV/√Hz at 1 kHz • Low Distortion: 0.00005% at 1 kHz
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OPA1652
OPA1654
SBOS477
OPA1652,
OPA1652
OPA1654
OPA16i
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Untitled
Abstract: No abstract text available
Text: OPA1652 OPA1654 Burr-Brown Audio SBOS477 – DECEMBER 2011 www.ti.com Low Noise and Distortion, General-Purpose, FET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1652, OPA1654 FEATURES DESCRIPTION • Low Noise: 4.5 nV/√Hz at 1 kHz • Low Distortion: 0.00005% at 1 kHz
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OPA1652
OPA1654
SBOS477
OPA1652,
OPA1652
OPA1654
OPA16/clocks
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Untitled
Abstract: No abstract text available
Text: OPA1652 OPA1654 Burr-Brown Audio SBOS477 – DECEMBER 2011 www.ti.com Low Noise and Distortion, General-Purpose, FET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1652, OPA1654 FEATURES DESCRIPTION • Low Noise: 4.5 nV/√Hz at 1 kHz • Low Distortion: 0.00005% at 1 kHz
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OPA1652
OPA1654
SBOS477
OPA1652,
SO-14
TSSOP-14
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2n3904, itt
Abstract: 2222n philips r360 A102 A106 A107 C103 C109 C114 foxconn schematic diagram UPS 1060 fet dd51 J241 ND R315
Text: A 4 B 2 D E Intel 100 MHz Pentium tm II processor/440BX AGPset Dual Processor Customer Reference Schematics Revision 1.0 4 PAGE TITLE 3 C COVER SHEET 1 BLOCK DIAGRAM 2 SLOT 1 CONNECTOR 3,4,5,6 CLK SYNTHESIZER 7 82443BX 8,9,10 FET SWITCHES 11,12 DIMM SOCKETS
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82443BX
82443BX/DRAM
FM5-62
440BX
2n3904, itt
2222n
philips r360
A102 A106 A107 C103 C109 C114
foxconn
schematic diagram UPS
1060 fet
dd51
J241
ND R315
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electret condenser mic
Abstract: electret condenser microphone capsule electret mic panasonic electret mic electret mic cartridge WM-E22C electret microphone mic condenser mic electret electret condenser microphone
Text: Omnidirectional Back Electret Condenser Microphone Cartridge WM-E22C ●Small and thin omnidierectional microphone ●Back electret type designed for high resistance to vibrations ●Non-soldering connection ●Provides gold plated contact area ●RFI protected for Multi band
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WM-E22C
-44ncy
WM-E22CT
000Hz
electret condenser mic
electret condenser microphone capsule
electret mic panasonic
electret mic
electret mic cartridge
WM-E22C
electret microphone
mic condenser
mic electret
electret condenser microphone
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A105K
Abstract: C3216JB0 MB39A108 MB39A108PFT h104k 5388-T138 MCH3306 MCH3405 SANYO DC 303 TDK C3216JB1
Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-71113-1Ea ASSP for Power Supply Applications Evaluation Board MB39A108 • DESCRIPTION The MB39A108 evaluation board is a surface mount circuit board with five channels of down conversion, up/down conversion, and up conversion circuits. The internal structure consists of two channels of step down type, one
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DS04-71113-1Ea
MB39A108
MB39A108
A105K
C3216JB0
MB39A108PFT
h104k
5388-T138
MCH3306
MCH3405
SANYO DC 303
TDK C3216JB1
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mospower applications handbook
Abstract: ASC capacitor Rudy Severns siliconix handbook SERVICE MANUAL lg r500 FPS-4N inverter lg ig drive p1 "mospower applications handbook" 47R16 20MHZ
Text: DIRECTED ENERGY, INC. APPLICATION NOTE GATE DRIVER DESIGN For Switch-Mode Applications and the DE-SERIES MOSFET TRANSISTOR George J. Krausse, Directed Energy, Inc. Abstract This application note discusses the gate driver design pattern philosophies that are essential in maximizing the performance of the DESERIES MOSFET in both switching speed and frequency for switch mode
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2sc5088 horizontal transistors
Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
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3SK114
3SK126
S1255
2SC2644
2-AV24
3SK115
3SK291
S1256
2-AV26H
2sc5088 horizontal transistors
S-AV36
2SK192 mosfet data
3SK121 equivalent
S-AV32
3SK121 fet
2SC2879 CB LINEAR CIRCUIT
replacement for 2sc5088 horizontal transistors
3SK73
equivalent transistor 2sc2509
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XC601B
Abstract: marking 601b fet e22 diode zener ZD 103 diode marking e41
Text: XC601B Series Lithium Secondary Battery Charge / Discharge Protection IC u u u u u CMOS, Low power consumption Single cell Lithium Ion secondary battery use Over-charge detection : 4.05V to 4.45V ± 1.0% Over-discharge detection : 2.1V to 2.9V ± 3.0% Short circuit protection : 0.05V to 0.2V
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XC601B
XC601BN105
XC601BN110
XC601BN205
XC601BN210
XC601BN305
XC601BN310
XC601BN405
XC601BN410
marking 601b
fet e22
diode zener ZD 103
diode marking e41
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420L40
Abstract: capacitor power factor correction schematic BI technologies Turns 742ap power factor correction wiring MR2406 lt1248 HM31-20200 5000 watt Power Factor circuit MUR110
Text: A P P L IAC PAPT LI IOCNA TNI O O TNE SN O T E S POWER FACTOR CORRECTION INTRODUCTION Modern electronic equipment can create noise that will cause problems with other equipment on the same supply system. To reduce system disturbances it is therefore essential to correct for this, which
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UC3710
35X50
HM31-20200
E220-18,
18VDC
420L40
capacitor power factor correction schematic
BI technologies Turns
742ap
power factor correction wiring
MR2406
lt1248
HM31-20200
5000 watt Power Factor circuit
MUR110
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GS-22-008 EUROPEAN DIRECTIVES
Abstract: w25q32b w25q32
Text: ADSP-BF609 EZ-KIT Lite Evaluation System Manual Revision 1.0, March 2012 Part Number 82-000269-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2012 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written
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ADSP-BF609
No-11N
ADP1715
DO-214AA
OD-523
GSOT03
OT23-3
1-800-ANALOGD
A0269-2011
GS-22-008 EUROPEAN DIRECTIVES
w25q32b
w25q32
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TIS88A equivalent
Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.
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20x40
111x109
TIS88A equivalent
2N3456 equivalent
J411 fet
2n5952 equivalent
2n3820 equivalent
2N5248 equivalent
fet 2N4304
2n5245 equivalent
2N4304 equivalent
2N5454 equivalent
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN5988 P-Channel MOS Silicon FET CPH3303 Isolimi Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. • Ultrahigh-speed switching. • 2.5 V drive. unit:mm 2 1 5 2 _ [CPH3303] 0.15, iE ?
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EN5988
CPH3303
CPH3303]
900mm2
Q025E25
E22220Q
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E2205
Abstract: GaAs fet application note E2183-3 e2183 E2342 E2180
Text: iSifLkLä. M ic r o 4268 Solar Way Fremont, CA 94538 510 651-6700 FAX (510) 651-2208 Wa v e Te c h n o l o g y GaAs FET APPLICATION NOTE Evaluation of The Effects of Hydrogen on MWT's FETs June 10, 1996 REV A BACKGROUND A number of articles M[2] both in the literature and reported at conferences^3]'[4] have
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Untitled
Abstract: No abstract text available
Text: POW ER FACTOR CORRECTION IN TR O D U C TIO N A resistive load will have a power factor of 1. The Modem electronic equipment can create noise that will cause problems with other equipment on the same supply system. To reduce system disturbances it is therefore essential to correct for this, which
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MR2406
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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