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    FET DIODE DATE SHEET Search Results

    FET DIODE DATE SHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    FET DIODE DATE SHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PMF3800SN

    Abstract: 03ab09
    Text: PMF3800SN N-channel TrenchMOS standard level FET Rev. 01 — 8 February 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field Effect Transistor FET in a plastic package using TrenchMOS™ technology.


    Original     		PDF PMF3800SN OT323 SC-70) PMF3800SN 03ab09

    BUK7C06-40AITE

    Abstract: No abstract text available
    Text: BUK7C06-40AITE N-channel TrenchMOS standard level FET Rev. 04 — 23 June 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using TrenchMOS technology, featuring very low on-state resistance and including


    Original     		PDF BUK7C06-40AITE BUK7C06-40AITE

    PMV65XP

    Abstract: No abstract text available
    Text: PMV65XP P-channel TrenchMOS extremely low level FET Rev. 01 — 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		PDF PMV65XP PMV65XP

    2N7002F

    Abstract: No abstract text available
    Text: 2N7002F N-channel TrenchMOS FET Rev. 02 — 9 May 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002F mbb076 2N7002F

    PHB33NQ20T

    Abstract: PHP33NQ20T
    Text: PHP/PHB33NQ20T N-channel TrenchMOS standard level FET Rev. 01 — 8 November 2004 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.


    Original     		PDF PHP/PHB33NQ20T PHB33NQ20T PHP33NQ20T

    Untitled

    Abstract: No abstract text available
    Text: PMV65XP P-channel TrenchMOS extremely low level FET Rev. 01 — 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		PDF PMV65XP 003aaa671 771-PMV65XP-T/R PMV65XP

    1.4944

    Abstract: 2N7002E
    Text: 2N7002E N-channel TrenchMOS FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002E mbb076 1.4944 2N7002E

    PMWD16UN

    Abstract: No abstract text available
    Text: PMWD16UN Dual N-channel µTrenchMOS ultra low level FET Rev. 02 — 24 March 2005 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.


    Original     		PDF PMWD16UN PMWD16UN

    PH7030L

    Abstract: No abstract text available
    Text: PH7030L N-channel TrenchMOS logic level FET Rev. 04. — 7 March 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		PDF PH7030L PH7030L

    15218

    Abstract: 15218 pin details SOT323 FET N PMF3800SN
    Text: PMF3800SN N-channel TrenchMOS standard level FET Rev. 02 — 1 July 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.


    Original     		PDF PMF3800SN OT323 15218 15218 pin details SOT323 FET N PMF3800SN

    PH3075L

    Abstract: 14603
    Text: PH3075L N-channel TrenchMOS logic level FET Rev. 01 — 25 February 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.


    Original     		PDF PH3075L PH3075L 14603

    PHX18NQ11T

    Abstract: No abstract text available
    Text: PHX18NQ11T N-channel TrenchMOS standard level FET Rev. 02 — 24 March 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a fully isolated plastic package using TrenchMOS™ technology.


    Original     		PDF PHX18NQ11T PHX18NQ11T

    03aa03

    Abstract: 2N7002 SOT23 data sheet transistor 2n7002 philips 2n7002 2n7002 philips equivalent of 2N7002 2n7002-1 "Field Effect Transistor" 2N7002 equivalent 2N7002* application
    Text: 2N7002 N-channel TrenchMOS FET Rev. 04 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002 mbb076 03aa03 2N7002 SOT23 data sheet transistor 2n7002 philips 2n7002 2n7002 philips equivalent of 2N7002 2n7002-1 "Field Effect Transistor" 2N7002 equivalent 2N7002* application

    PH16030L

    Abstract: No abstract text available
    Text: PH16030L N-channel TrenchMOS logic level FET Rev. 01 — 24 February 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.


    Original     		PDF PH16030L PH16030L

    PMV117EN215

    Abstract: PMV117EN
    Text: PMV117EN µTrenchMOS enhanced logic level FET Rev. 02 — 7 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.


    Original     		PDF PMV117EN mbb076 771-PMV117EN215 PMV117EN PMV117EN215

    PHP75NQ08T

    Abstract: No abstract text available
    Text: PHP75NQ08T N-channel TrenchMOS standard level FET Rev. 01 — 13 April 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.


    Original     		PDF PHP75NQ08T PHP75NQ08T

    PHD 73

    Abstract: PHU108NQ03LT phb108nq03lt PHD108NQ03LT PHP108NQ03LT PHB108
    Text: PHB/PHD/PHU108NQ03LT N-channel TrenchMOS logic level FET Rev. 03 — 18 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.


    Original     		PDF PHB/PHD/PHU108NQ03LT PHD 73 PHU108NQ03LT phb108nq03lt PHD108NQ03LT PHP108NQ03LT PHB108

    PHP45NQ15T

    Abstract: PHB45NQ15T
    Text: PHP/PHB45NQ15T N-channel TrenchMOS standard level FET Rev. 01 — 8 November 2004 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.


    Original     		PDF PHP/PHB45NQ15T PHP45NQ15T PHB45NQ15T

    PMWD20XN

    Abstract: No abstract text available
    Text: PMWD20XN Dual N-channel µTrenchMOS extremely low level FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.


    Original     		PDF PMWD20XN PMWD20XN

    PMWD26UN

    Abstract: No abstract text available
    Text: PMWD26UN Dual N-channel µTrenchMOS ultra low level FET Rev. 02 — 19 May 2005 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features


    Original     		PDF PMWD26UN PMWD26UN

    K638

    Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
    Text: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a


    OCR Scan     		PDF BUK638-1000A/B 0G44744 BUK638 -1000A -1000B K638-1OOOA/B 711Gfi5b 04M74L K638 transistor S52 DIODE 1000a fet 1000A

    Untitled

    Abstract: No abstract text available
    Text: Philips Components Data sheet status Product specification date of issue March 1991 BUK627-500B PowerMOS transistor Fast recovery diode FET P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK627-500B

    K638

    Abstract: idm 73
    Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK638-800A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK638-800A/B 711Gfl2b BUKS38 -800A K638-800A/B K638 idm 73

    Untitled

    Abstract: No abstract text available
    Text: - P 3 9-/ÎS Data sheet status Preliminary specification date of issue March 1991 BUK638-1000A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK638-1000A/B 7110fiEb BUK638 BUK638-10OOA/B