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    FET DIODE Search Results

    FET DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    FET DIODE Price and Stock

    Vishay Intertechnologies VS-ENZ025C60N

    Discrete Semiconductor Modules EMIPAK 600V 25A N-CH SIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI VS-ENZ025C60N Bulk 100
    • 1 -
    • 10 -
    • 100 $50.45
    • 1000 $46.36
    • 10000 $46.36
    		Buy Now

    FET DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pa1556ah

    Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
    Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET


    Original     		PDF O-251/-252, O-220/-262 SC-96 SC-95 SC-96 OT-23) D10702EJAV0PF00 pa1556ah PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326

    Pch MOS FET

    Abstract: US6M2 TUMT6
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.


    Original     		PDF 85Max. 15Max. Pch MOS FET US6M2 TUMT6

    QS6M4

    Abstract: TSMT6 Pch MOS FET m04 fet
    Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.


    Original     		PDF

    2SK1078

    Abstract: 1SS184 SSOP24 TD62M4503AFN
    Text: TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI−CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x 4 and Diodes (1SS184). FEATURES 4V Drive Low ON Resistance : RDS (ON) = 0.58 Ω (Typ.)


    Original     		PDF TD62M4503AFN TD62M4503AFN 2SK1078) 1SS184) 2SK1078 1SS184 SSOP24

    Untitled

    Abstract: No abstract text available
    Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.


    Original     		PDF QS6U24 QS6U24

    QS5U27

    Abstract: IR 240 FET
    Text: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U27 combines Pch MOS FET with a


    Original     		PDF QS5U27 QS5U27 IR 240 FET

    QS6U24

    Abstract: No abstract text available
    Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.


    Original     		PDF QS6U24 QS6U24

    Untitled

    Abstract: No abstract text available
    Text: QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U23 combines Pch MOS FET with a


    Original     		PDF QS5U23 QS5U23

    QS5U23

    Abstract: ONM10
    Text: QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U23 combines Pch MOS FET with a


    Original     		PDF QS5U23 QS5U23 ONM10

    Untitled

    Abstract: No abstract text available
    Text: QS5U28 QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U28 combines Pch MOS FET with


    Original     		PDF QS5U28 QS5U28

    Untitled

    Abstract: No abstract text available
    Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.


    Original     		PDF QS6U24 QS6U24

    QS5U27

    Abstract: No abstract text available
    Text: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U27 combines Pch MOS FET with a


    Original     		PDF QS5U27 QS5U27

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet RAJ20660AGNP R07DS1071EJ0100 Rev.1.00 May 22, 2013 Integrated Driver - MOS FET DrMOS Description The RAJ20660AGNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver,


    Original     		PDF RAJ20660AGNP R07DS1071EJ0100 RAJ20660AGNP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet R2J20654NP R07DS0246EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20654NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20654NP R07DS0246EJ0100 R2J20654NP w9044

    R2J20651ANP

    Abstract: Nippon capacitors
    Text: Preliminary R2J20651ANP Integrated Driver – MOS FET DrMOS REJ03G1792-0101 Rev.1.01 Aug 19, 2009 Description The R2J20651ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20651ANP REJ03G1792-0101 R2J20651ANP Nippon capacitors

    Nippon capacitors

    Abstract: No abstract text available
    Text: R2J20651NP Integrated Driver – MOS FET DrMOS REJ03G1743-0300 Preliminary Rev.3.00 Mar 25, 2009 Description The R2J20651NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20651NP REJ03G1743-0300 R2J20651NP Nippon capacitors

    R2J20604NP

    Abstract: Nippon capacitors
    Text: R2J20604NP Integrated Driver – MOS FET DrMOS REJ03G1605-0300 Rev.3.00 Feb 09, 2009 Description The R2J20604NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20604NP REJ03G1605-0300 R2J20604NP Nippon capacitors

    renesas pwm

    Abstract: QFN56 Datasheet R2J20601NP intel drMOS compliant QFN56 PT-100 resistance charts R2J20601
    Text: R2J20601NP Driver – MOS FET Integrated SiP DrMOS REJ03G0237-0700 Rev.7.00 Jun 30, 2008 Description The R2J20601NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20601NP REJ03G0237-0700 R2J20601NP renesas pwm QFN56 Datasheet intel drMOS compliant QFN56 PT-100 resistance charts R2J20601

    QFN56 Datasheet

    Abstract: QFN56 R2J20602NP intel drMOS compliant ic tab 810 Nippon capacitors
    Text: R2J20602NP Integrated Driver – MOS FET DrMOS REJ03G1480-0300 Rev.3.00 Jun 30, 2008 Description The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20602NP REJ03G1480-0300 R2J20602NP QFN56 Datasheet QFN56 intel drMOS compliant ic tab 810 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet R2J20656ANP R07DS0201EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20656ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20656ANP R07DS0201EJ0100 R2J20656ANP Low-si9044

    Nippon capacitors

    Abstract: No abstract text available
    Text: R2J20604NP Integrated Driver – MOS FET DrMOS REJ03G1605-0100 Preliminary Rev.1.00 Nov 30, 2007 Description The R2J20604NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20604NP REJ03G1605-0100 R2J20604NP Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: R2J20601NP Driver – MOS FET Integrated SiP DrMOS REJ03G0237-0200 Rev.2.00 Oct 12, 2004 Description The R2J20601NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20601NP REJ03G0237-0200 R2J20601NP Unit2607

    QFN56 Datasheet

    Abstract: QFN56 R2J20602NP QFN56 footprint Nippon capacitors
    Text: R2J20602NP Integrated Driver – MOS FET DrMOS REJ03G1480-0200 Preliminary Rev.2.00 Nov 30, 2007 Description The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


    Original     		PDF R2J20602NP REJ03G1480-0200 R2J20602NP QFN56 Datasheet QFN56 QFN56 footprint Nippon capacitors

    FET differential amplifier circuit

    Abstract: fet differential amplifier schematic DC bias of gaas FET
    Text: æ Agom Application Note Æ a n A M P com pany Suggested Circuit Controller for a Dual-Control FET VVA in AGC Temperature Compensationt M524 Experimental Series FET — O— Experimental (Shunt FET) - A - •Calc (Series FET) — □ — Calc (Shunt FET)


    OCR Scan     		PDF