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    FET D2 PACKAGE Search Results

    FET D2 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    FET D2 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application


    Original     		IRFHS9351PbF PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application


    Original     		IRFHS9351PbF IRFHS9351T PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97572B IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) T OP VIEW S1 1 D1 6 D1 G2 S2 D1 ID -3.4 (@TC = 25°C) d G1 2 FET 1 D1 D2 5 G2 A D2 D2 3 G1 4 S2 S1 D2 FET 2 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application


    Original     		97572B IRFHS9351PbF IRFHS9351TR J-STD-020Dâ PDF

    IRFHS9351

    Abstract: No abstract text available
    Text: PD - 97572B IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application


    Original     		97572B IRFHS9351PbF IRFHS9351TRPBF IRFHS9351TR2PBF J-STD-020D IRFHS9351 PDF

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 15 August 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified


    Original     		PSMN057-200B PDF

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK9640-100A N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9640-100A PDF

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK7675-55A N-channel TrenchMOS standard level FET 25 August 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK7675-55A PDF

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK963R2-40B N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK963R2-40B PDF

    BUK75

    Abstract: BUK764R0-55B
    Text: D2 PA K BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This


    Original     		BUK764R0-55B BUK75 BUK764R0-55B PDF

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This


    Original     		BUK764R0-55B PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet HDTMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 75 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die


    OCR Scan     		MTB75N06HD/D 418B-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information HDTMOS E-FET High Density Power FET D 2 p a k for Surface Mount TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die


    OCR Scan     		MTB75N03HDL/D 418B-02 PDF

    transistor 8522

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB8N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB8N50E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 8.0 AMPERES 500 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die


    OCR Scan     		MTB8N50E/D transistor 8522 PDF

    cr 406 transistor

    Abstract: AN569 MTB60N10E7L cr2m TMOS E-FET PD242 s1vb0
    Text: MOTOROLA O rder this docum ent by M TB60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTB60N10E7L TMOS E-FET High Energy Power FET D2PAK for Surface Mount TM OS POWER FET 60 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die


    OCR Scan     		MTB60N10E7L/D MTB60N10E7L/D cr 406 transistor AN569 MTB60N10E7L cr2m TMOS E-FET PD242 s1vb0 PDF

    TRANSISTOR BH RW

    Abstract: step motor em 483
    Text: MOTOROLA Order this document by MTB9N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB9N25E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 9.0 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		MTB9N25E/D TRANSISTOR BH RW step motor em 483 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB2P50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB2P50E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TM OS POWER FET 2.0 AMPERES 500 VOLTS P-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		MTB2P50E/D MTB2P50E PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB10N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB10N40E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 10 AMPERES 400 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		MTB10N40E/D MTB10N40E PDF

    tb7104

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB71040L/D SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET High Energy Pow er FET D2PAK for S u rface Mount TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0-022 Q N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die


    OCR Scan     		MTB71040L/D tb7104 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB2N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB2N40E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		MTB2N40E/D MTB2N40E PDF

    transistor motorola 246

    Abstract: TB60N06HD
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB60N06HD HDTMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount M otorola Preferred D evice N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die


    OCR Scan     		MTB60N06HD 0E-05 transistor motorola 246 TB60N06HD PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TB6N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB6N60E TMOS E-FET ™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 600 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		TB6N60E/D MTB6N60E PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TB60N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB60N06HD HDTMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 60 AMPERES 60 VOLTS R DS on = 0.014 OHM


    OCR Scan     		TB60N06HD/D MTB60N06HD design1982. 418B-02 PDF

    33N10E

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TB33N10E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTB33N10E TMOS E-FET ™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		TB33N10E/D MTB33N10E/D 33N10E PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TB75N05HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB75N05HD HDTMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 75 AMPERES 50 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		TB75N05HD/D TB75N05HD 418B-02 PDF