SMD CODE MARKING s7 SOT23
Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
Text: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes
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applicat174
PMBFJ175
PMBFJ176
PMBFJ177
OT-23
OT-89
OT-143
OT-223
OT-23
SMD CODE MARKING s7 SOT23
PMBFJ111
PMBFJ174
BSR56
BFT46
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m8p smd
Abstract: sot-23 MARKING CODE 70.2 fet SMD CODE PACKAGE SOT23 sot-23 MARKING CODE GS PMBF310 Philips fet SOT23 code marking M2P smd marking code MHP smd sot-23 MARKING CODE GS 5 marking 702 sot-23
Text: 11 SMD F E T ’s SMD® FET’s Description Features Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capaci tance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own
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OT-23
OT-89
OT-143
OT-223
OT-223
OT-69
m8p smd
sot-23 MARKING CODE 70.2
fet SMD CODE PACKAGE SOT23
sot-23 MARKING CODE GS
PMBF310
Philips fet SOT23 code marking
M2P smd
marking code MHP smd
sot-23 MARKING CODE GS 5
marking 702 sot-23
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sot-23 Marking M6
Abstract: FET marking codes MOSFET P-channel SOT-23 m6 sot-23 pinout bf992 application FET SOT-223 N-Channel fet m90 BFT46 SFs SOT23 6x marking sot-23 p-channel
Text: SMDFETs DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assem bly cost. The three categories of FET’s each have its own attributes
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BSP121
BSP126
BSP205
BSP206
BSP220
BSP225
BSR56
BSR57
BSR58
BSS83
sot-23 Marking M6
FET marking codes
MOSFET P-channel SOT-23
m6 sot-23 pinout
bf992 application
FET SOT-223 N-Channel
fet m90
BFT46
SFs SOT23
6x marking sot-23 p-channel
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P-Channel Depletion Mode FET
Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic
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AN101
P-Channel Depletion Mode FET
p channel depletion mosfet
an101 siliconix
N-Channel JFET FETs
JFETs Junction FETs
Junction FETs JFETs
list of n channel fet
n channel depletion MOSFET
Depletion MOSFET
depletion
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LM103 zener
Abstract: jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
Text: FET Circuit Applications FET Circuit Applications National Semiconductor Application Note 32 February 1970 Polycarbonate dielectric TL H 6791 – 1 Sample and Hold With Offset Adjustment The 2N4339 JFET was selected because of its low lGSS k100 pA very-low lD(OFF) (k50 pA) and low pinchoff volt-
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2N4339
2N4393
2N4393
LM103 zener
jfet cascode
2N3069
J FET RF Cascode Input
2N3070
FM3954
pierce crystal oscillator
2n4416 jfet
HI-FI tone control transistors
FM1208
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detector circuit using 741 OP-AMP
Abstract: function generator using LM311 741 opamp ICL8043 741 op-amp as integrator staircase generator dual FET input op-amp LM311 and applications LM311 null LM311
Text: ICL 8043 O K nnü^O IL Dual Fet Input OpAmp FEATURES GENERAL DESCRIPTION • • • • • The ICL8043 contains two FET input op amps, each similar in performance to the ICL8007. The inputs and outputs are fully short circuit protected, and no latch-up problems exist.
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135mW
ICL8043
ICL8007.
804istance
detector circuit using 741 OP-AMP
function generator using LM311
741 opamp
741 op-amp as integrator
staircase generator
dual FET input op-amp
LM311 and applications
LM311 null
LM311
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p channel depletion mosfet
Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
Text: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the
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AN101
p channel depletion mosfet
list of n channel fet
P-Channel Depletion Mode FET
shockley diode
Depletion MOSFET 6D
n channel depletion MOSFET
list of n channel MOSFET
P-Channel Depletion Mode Field Effect Transistor
depletion p mosfet
P-Channel Depletion Mosfets
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Untitled
Abstract: No abstract text available
Text: 2SK1279 N-channel MOS-FET F-V Series 500V > Features 0,58Ω 15A 125W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1279
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Untitled
Abstract: No abstract text available
Text: 2SK1276A N-channel MOS-FET F-V Series 250V > Features 0,25Ω 20A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1276A
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Mosfet 30A 250V
Abstract: 2SK1277
Text: 2SK1277 N-channel MOS-FET F-V Series 250V > Features 0,12Ω 30A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1277
Mosfet 30A 250V
2SK1277
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2SK1276A
Abstract: No abstract text available
Text: 2SK1276A N-channel MOS-FET F-V Series 250V > Features 0,25Ω 20A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1276A
2SK1276A
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2SK1277
Abstract: No abstract text available
Text: 2SK1277 N-channel MOS-FET F-V Series 250V > Features 0,12Ω 30A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1277
2SK1277
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Untitled
Abstract: No abstract text available
Text: 2SK1280 N-channel MOS-FET F-V Series 500V > Features 0,5Ω 18A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1280
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05815A
Abstract: 500V0 2SK1279 UA3000 MOSFET 500V 15A
Text: 2SK1279 N-channel MOS-FET F-V Series 500V > Features 0,58Ω 15A 125W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1279
05815A
500V0
2SK1279
UA3000
MOSFET 500V 15A
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2SK1280
Abstract: MOSFET 500V 18A
Text: 2SK1280 N-channel MOS-FET F-V Series 500V > Features 0,5Ω 18A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1280
2SK1280
MOSFET 500V 18A
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mosfet 500v 10A
Abstract: diode 500v 10A mosfet 10a 500v power diode 500v 10A 2SK1278
Text: 2SK1278 N-channel MOS-FET F-V Series 500V > Features 1,1Ω 10A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1278
mosfet 500v 10A
diode 500v 10A
mosfet 10a 500v
power diode 500v 10A
2SK1278
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PHM8001
Abstract: phm8
Text: MOSFET MODULE PHM8001 Single 800A /150V OUTLINE DRAWING FEATURES * Trench Gate MOS FET Module * Super Low Rds ON 1.4 milliohms( @800A ) * With Fast Recovery Source-Drain Diode Circuit TYPICAL APPLICATIONS * Chopper Control For FORKLIFTs Approximate Weight : 650g
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PHM8001
/150V
PHM8001
phm8
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PHM5601
Abstract: 560a D280A 280A
Text: MOSFET MODULE PHM5601 Single 560A /150V OUTLINE DRAWING FEATURES * Trench Gate MOS FET Module * Super Low Rds ON 2 milliohms( @560A ) * With Fast Recovery Source-Drain Diode Circuit TYPICAL APPLICATIONS * Chopper Control For FORKLIFTs Approximate Weight : 650g
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PHM5601
/150V
PHM5601
560a
D280A
280A
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LM308 replacement
Abstract: LM308 pin configuration lm308 LM308AN LM308D lm308j 14 pin LM308h LM308AJ replacement LM108A LM108AH
Text: LM108/A, LM308/A LM108/A, LM308/A Super-Beta Operational Amplifier GENERAL DESCRIPTION FEATURES These differential input, precision am plifiers provide low input currents and offset voltages com parable to FET and chopper stabilized am plifiers. They feature low power
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LM108/A,
LM308/A
LM108A
LM308A
30/uV/Â
10pA/Â
LM308 replacement
LM308 pin configuration
lm308
LM308AN
LM308D
lm308j 14 pin
LM308h
LM308AJ replacement
LM108AH
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2N4393
Abstract: 2N4393 DIE CHIP cp206 GEOMETRY 2N4391 2N4391 ADAM transistor 2n4391 2N4392 CMPF4391 CMPF4392
Text: CP206 PROCESS Central Small Signal Transistors TM Semiconductor Corp. N - Channel Switch/Chopper J FET Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21 x 18 MILS Die Thickness 8.0 MILS Drain Bonding Pad Area 3.8 X 3.8 MILS Source Bonding Pad Area
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CP206
2N4391
2N4392
2N4393
CMPF4391
CMPF4392
CMPF4393
Semicondu000Å
2N4393
2N4393 DIE CHIP
cp206
GEOMETRY 2N4391
2N4391
ADAM
transistor 2n4391
2N4392
CMPF4391
CMPF4392
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK1276A N-channel MOS-FET F-V Series 250V > Features - 0,25Q 20 A 100W > Outline Drawing Include Fast Recovery Diode High Voltage Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics - Absolute Maximum Ratings Tc=25°CV
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2SK1276A
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2SC2911S
Abstract: 2SA1209S transistor tr31 stk750 2SC2274F
Text: Ordering number : ENN4421 Thick Film Hybrid IC STK750-010 Chopper Regulator using MOS FET with Multi-Scan Support 1 A Output Current unit: mm 4136 [STK750-010] 46.6 3.6 • Multi-scan supporting CRT displays (secondary voltage variable regulator) 1 15 2.0
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ENN4421
STK750-010
STK750-010]
STK750-010
2SC2911S
2SA1209S
transistor tr31
stk750
2SC2274F
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ICL8043CJE
Abstract: detector circuit using 741 OP-AMP staircase generator ICL8043CPE ICL 8007 C ICL8043 LM311 null LM311 lm311 OP-AMP OPAMP LM311
Text: ICL 8043 O K nnü^O IL Dual Fet Input OpAmp FEATURES GENERAL DESCRIPTION • • • • • The ICL8043 co n ta in s tw o FET in p u t op am ps, each sim ila r in pe rform ance to the ICL8007. The inpu ts and o u tp u ts are fu lly s h o rt c irc u it protected, and no la tch -u p problem s exist.
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135mW
ICL8043
ICL8007.
804istance
ICL8043CJE
detector circuit using 741 OP-AMP
staircase generator
ICL8043CPE
ICL 8007 C
LM311 null
LM311
lm311 OP-AMP
OPAMP LM311
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Untitled
Abstract: No abstract text available
Text: F U J I eujM ^u'udJiá 2S K 1279 N-channel MOS-FET F-V Series 500V 0,58Q 15A 125W > Outline Drawing > Features - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Equivalent Circuit > Maximum Ratings and Characteristics
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