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    FET C42 Search Results

    FET C42 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AD8224ACPZ-WP Analog Devices Dual Channel FET Instrumentati Visit Analog Devices Buy
    AD820ARMZ-R7 Analog Devices FET INPT, SINGLE SPLY AMP Visit Analog Devices Buy
    ADA4817-1ARDZ-R7 Analog Devices High Speed FET Input Amp Visit Analog Devices Buy
    AD8220WARMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy
    AD8220BRMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy
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    FET C42 Price and Stock

    Analog Devices Inc LTC4217HFE#PBF

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    Mouser Electronics LTC4217HFE#PBF 159
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    • 100 $6.85
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    Analog Devices Inc LTC4217IFE#PBF

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    Mouser Electronics LTC4217IFE#PBF 97
    • 1 $11.07
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    • 100 $6.29
    • 1000 $5.75
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    Analog Devices Inc LTC4217CFE#PBF

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    Mouser Electronics LTC4217CFE#PBF 74
    • 1 $10.76
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    Analog Devices Inc LTC4217IFE#TRPBF

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    Analog Devices Inc LTC4217CFE#TRPBF

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    Find more FET C42 price and stock on Findchips.com

    FET C42 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC uPA 63 H

    Abstract: NEC uPA 63 NEC uPA 63 a NEC uPA 71 GL124 MEL12 UPA672T UPA572T UPA602 nec sc-59 fet
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR ,uPA502T N-CHANNEL MOS FET 5-PIN 2 CIRCUITS The pPA502T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +O.’


    Original     		PDF uPA502T pPA502T SC-59 pPA503T NEC uPA 63 H NEC uPA 63 NEC uPA 63 a NEC uPA 71 GL124 MEL12 UPA672T UPA572T UPA602 nec sc-59 fet

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D5011UK METAL GATE RF SILICON FET MECHANICAL DATA A N & D  % C $ ! # " B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 50V – 500MHz SINGLE ENDED H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D5011UK 500MHz

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D5013UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 500MHz SINGLE ENDED C N typ  B A ! D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D5013UK 500MHz

    JMK105BJ105KV

    Abstract: h-bridge converter JMK212BJ226MG UMK105 poliswitch BD9639MWV Yuden SAW bd96 high side buck driver
    Text: Regulators ICs for Digital Cameras and Camcorders Switching Regulator ICs with Built-in FET 5V BD9639MWV No.11036ECT16 ●Description BD9639MWV is 6ch system switching regulator IC that has built-in FET and Error amp phase compensation for DSC/DVC. The built-in circuit which consist of 2ch Buck-Boost / 2ch Buck / 2ch Boost circuits realize the high efficiency.


    Original     		PDF BD9639MWV 11036ECT16 BD9639MWV R1120A JMK105BJ105KV h-bridge converter JMK212BJ226MG UMK105 poliswitch Yuden SAW bd96 high side buck driver

    NR4018T2R2N

    Abstract: No abstract text available
    Text: Regulators ICs for Digital Cameras and Camcorders Switching Regulator ICs with Built-in FET 5V BD9639MWV No.11036ECT16 ●Description BD9639MWV is 6ch system switching regulator IC that has built-in FET and Error amp phase compensation for DSC/DVC. The built-in circuit which consist of 2ch Buck-Boost / 2ch Buck / 2ch Boost circuits realize the high efficiency.


    Original     		PDF BD9639MWV 11036ECT16 BD9639MWV R1120A NR4018T2R2N

    J307 FET

    Abstract: AGR19180EF JESD22-A114 agere c8
    Text: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19180EF Hz--1990 AGR19180EF DS04-080RFPP DS02-377RFPP) J307 FET JESD22-A114 agere c8

    CLF7045-1R5N

    Abstract: No abstract text available
    Text: TPS54295 SLVSB01B – OCTOBER 2011 – REVISED DECEMBER 2011 www.ti.com 2A Dual Channel Synchronous Step-Down Switcher with Integrated FET SWIFT Check for Samples: TPS54295 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • •


    Original     		PDF TPS54295 SLVSB01B CLF7045-1R5N

    J307 FET

    Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
    Text: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19180EF Hz--1990 AGR19180EF DS04-162RFPP DS04-080RFPP) J307 FET JESD22-A114 c38 transistor j526 j451 J386

    Untitled

    Abstract: No abstract text available
    Text: TPS54295 SLVSB01B – OCTOBER 2011 – REVISED DECEMBER 2011 www.ti.com 2A Dual Channel Synchronous Step-Down Switcher with Integrated FET SWIFT Check for Samples: TPS54295 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • •


    Original     		PDF TPS54295 SLVSB01B

    Untitled

    Abstract: No abstract text available
    Text: TPS54295 SLVSB01B – OCTOBER 2011 – REVISED DECEMBER 2011 www.ti.com 2A Dual Channel Synchronous Step-Down Switcher with Integrated FET SWIFT Check for Samples: TPS54295 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • •


    Original     		PDF TPS54295 SLVSB01B

    A102 A106 A107 C103 C109 C114

    Abstract: A114 esh IOR 5B1 mdb25 philips r360 2n3904, itt BAR54 foxconn 82443GX 2D6 SOT-23
    Text: A B C D E Intel 100MHz Pentium R II processor/440GX AGPset Dual-Processor Customer Reference Schematics 4 Revision 1.0 4 PAGE TITLE COVER SHEET 1 BLOCK DIAGRAM 2 SLOT 1 CONNECTOR 3,4,5,6 CLK SYNTHESIZER 7 82443GX 8,9,10 FET SWITCHES 11,12 DIMM SOCKETS 13,14,15,16


    Original     		PDF 100MHz processor/440GX 82443GX FM5-62 440GX A102 A106 A107 C103 C109 C114 A114 esh IOR 5B1 mdb25 philips r360 2n3904, itt BAR54 foxconn 82443GX 2D6 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: TPS542951 www.ti.com SLVSBI4B – JULY 2012 – REVISED OCTOBER 2013 2A/3A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS542951 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • •


    Original     		PDF TPS542951

    AGR19180EF

    Abstract: JESD22-A114 Z111A
    Text: AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19180EF Hz--1990 AGR19180EF JESD22-A114 Z111A

    Untitled

    Abstract: No abstract text available
    Text: TPS542951 www.ti.com SLVSBI4A – JULY 2012 – REVISED APRIL 2013 2A/3A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS542951 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • •


    Original     		PDF TPS542951

    PS54395

    Abstract: No abstract text available
    Text: TPS54395 www.ti.com SLVSBC8A – JUNE 2012 – REVISED MAY 2013 3A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS54395 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • • •


    Original     		PDF TPS54395 PS54395

    PS54395

    Abstract: No abstract text available
    Text: TPS54395 www.ti.com SLVSBC8A – JUNE 2012 – REVISED MAY 2013 3A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS54395 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • • •


    Original     		PDF TPS54395 PS54395

    Vo115

    Abstract: No abstract text available
    Text: TPS54295 SLVSB01 – OCTOBER 2011 www.ti.com 2A Dual Channel Synchronous Step-Down Switcher with Integrated FET SWIFT Check for Samples: TPS54295 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • D-CAP2™ Control Mode


    Original     		PDF TPS54295 SLVSB01 Vo115

    Untitled

    Abstract: No abstract text available
    Text: TPS54495 www.ti.com SLVSBH0A – JUNE 2012 – REVISED MAY 2013 4A/2A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS54495 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • •


    Original     		PDF TPS54495

    PS54495

    Abstract: No abstract text available
    Text: TPS54495 www.ti.com SLVSBH0A – JUNE 2012 – REVISED MAY 2013 4A/2A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS54495 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • •


    Original     		PDF TPS54495 PS54495

    2n3904, itt

    Abstract: 2222n philips r360 A102 A106 A107 C103 C109 C114 foxconn schematic diagram UPS 1060 fet dd51 J241 ND R315
    Text: A 4 B 2 D E Intel 100 MHz Pentium tm II processor/440BX AGPset Dual Processor Customer Reference Schematics Revision 1.0 4 PAGE TITLE 3 C COVER SHEET 1 BLOCK DIAGRAM 2 SLOT 1 CONNECTOR 3,4,5,6 CLK SYNTHESIZER 7 82443BX 8,9,10 FET SWITCHES 11,12 DIMM SOCKETS


    Original     		PDF 82443BX 82443BX/DRAM FM5-62 440BX 2n3904, itt 2222n philips r360 A102 A106 A107 C103 C109 C114 foxconn schematic diagram UPS 1060 fet dd51 J241 ND R315

    J307 FET

    Abstract: J307 transistor c35 equivalent IM335
    Text: Preliminary Data Sheet July 2003 AGR19180E 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19180E is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19180E Hz--1990 AGR19180EU AGR19180EF Voltag48, DS02-377RFPP J307 FET J307 transistor c35 equivalent IM335

    Untitled

    Abstract: No abstract text available
    Text: eÊ Stanford Microdevices Product Description SPF-2098 Stanford M icrodevices’ SPF-2098 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 1-23 GHz, Low Noise PHEMT G a As FET


    OCR Scan     		PDF SPF-2098 100mW SPF-2098

    transistor C5080

    Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
    Text: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295


    OCR Scan     		PDF 3SK228 3SK239A 3SK309 3SK186 3SK295 3SK194 BB101M BB101C 3SK296 2SC2732 transistor C5080 transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965

    125C42

    Abstract: No abstract text available
    Text: SEMICONDUCTOR CORPORATION Advance Product Information s d h / s o n e t 2.5Gbits/sec VSC7926 Laser Diode Driver Features • Rise Times Less Than lOOps Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data Direct Access to Modulation and Bias FET’s


    OCR Scan     		PDF VSC7926 VSC7926 G52188-0, 125C42