9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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Untitled
Abstract: No abstract text available
Text: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3341-01
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Untitled
Abstract: No abstract text available
Text: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3341-01
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2SK3341-01 equivalent
Abstract: 2SK3341-01 2sk3341
Text: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3341-01
2SK3341-01 equivalent
2SK3341-01
2sk3341
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Untitled
Abstract: No abstract text available
Text: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings
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2SK3341-01
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Untitled
Abstract: No abstract text available
Text: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings
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PDF
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2SK3341-01
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A2293
Abstract: No abstract text available
Text: 2SK1943-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET -FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage
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2SK1943-01
20Kfi)
zgTi30
A2293
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A2292
Abstract: 2SK1942-01 SC-65
Text: 2SK1942-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES I Features Outline Drawings 'High speed switching >L>w on-resistance 'No secondary breakdown ' L w driving power 'High voltage ' V CS = ±30V Guarantee •Avalanche-proof I Applications
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2SK1942-01
Tc-25Â
SC-65
A2292
2SK1942-01
SC-65
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mosfet v0
Abstract: No abstract text available
Text: 2SK960-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES Outline Drawings • Hhjh speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hi(|h voltage ■Applications • Switching regulators
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2SK960-MR
mosfet v0
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Untitled
Abstract: No abstract text available
Text: 2SK961 FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • l.ow driving power • High voltage ■ Applications • Switching regulators
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OCR Scan
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2SK961
5388-7S51
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ups electrical symbols
Abstract: 2SK727-01 2SK727 schematic symbols UPS SC-65
Text: 2SK727-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • Avalanche-proof ■Applications • Switching regulators
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2SK727-01
SC-65
ups electrical symbols
2SK727-01
2SK727
schematic symbols UPS
SC-65
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mosfet 2sk
Abstract: A2117 HXAA 2SK1024-01 A2-117 DIODE JS 8
Text: 2SK1024-01 FU JI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES Outline Drawings ¡Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage V gss- ± 30V Guarantee Avalanche-proof ¡Applications Switching regulators
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2SK1024-01
O-22QAB
SC-46
HTS30S3#
mosfet 2sk
A2117
HXAA
2SK1024-01
A2-117
DIODE JS 8
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l00a
Abstract: PV 900v 16J1 2SK961 gmg6 T0220AB T151 DIODE JS.3
Text: 2SK961 FUJI POWER M OS-FET N-'HANNEL SILICON POWER MOS-FET F-I ¡Features S E R IE S lOutline Drawings High speed switching Low on-resistance No secondary breakdown l.ow driving power High voltage ¡Applications Switching regulators UPS D C - D C converters
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SK961
T0220AB
SC-46
1111S
l00a
PV 900v
16J1
2SK961
gmg6
T0220AB
T151
DIODE JS.3
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2SK2147-01
Abstract: No abstract text available
Text: 2SK2147-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-n SERIES I Outline Drawings • Features • High speed sw itching • Low o n-resistance • No secondary breakd ow n • Low driving p o w er
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2SK2147-01
032iO2
00D31b0
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2SK960
Abstract: 50N60 2SK960-MR
Text: 2SK960-MR FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES Outline Drawings • Hiijh speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hi<|h voltage ■Applications • Switching regulators
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2SK960-MR
SC-67
Tc-25Â
2SK960
50N60
2SK960-MR
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2SK727-01
Abstract: SC-65
Text: 2SK727-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • Avalanche-proof ■A pplications • Switching regulators
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2SK727-01
SC-65
2SK727-01
SC-65
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2SK957-MR
Abstract: 2sk957
Text: 2SK957-MR FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-II SERIES Outline Drawings ¡Features High speed switching 1Low on-resistance 1No secondary breakdown Low driving power ' High voltage >Vgss= ± 3 0 V Guarantee •Applications S w itc h in g regulators
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2SK957-MR
SC-67
Tc-25Â
BTS30S3^
2SK957-MR
2sk957
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Untitled
Abstract: No abstract text available
Text: 2SK1548-01M SIPMOS FU JI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-II SERIES • Features IOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 30V Guarantee
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2SK1548-01M
DQG30Ã
548-01M
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Untitled
Abstract: No abstract text available
Text: 2SK727-01 FUJI POWER MOS-FET SERIES N-CHANNEL SILICON POWER MOS-FET p • Features ■ O u tlin e Drawings j • High speed sw itching • Low on-resistance • No secondary breakdown • Low driving pow er • High voltage • Avalanche-proof ■A pplications
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2SK727-01
53SB-7651
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a2297
Abstract: No abstract text available
Text: 2SK1944-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET - F A P - I I A • Features S E R I E S Outline Drawings • High speed switching • l ow on-resistanoe • I Jo secondary breakdown • l ow driving power
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2SK1944-01
a2297
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TT 2158
Abstract: No abstract text available
Text: 2SK1212-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features • High current • Low orwesistance • No secondary breakdown • Low driving power • Avalanche-proof ■ Applications • DC-DC converters • Motor controllers • Gt neral purpose power amplifier
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2SK1212-01R
STg30
TT 2158
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MG100g2ys1
Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Text: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series
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EG50N2YS9*
G15N2YSI
MG25N2YS1
MG50N2YS1
G35Q2YSI
MG25Q2YS1
MG50Q2YS1
MG25S2YS1
G25N1JS1
G50N1JS1
MG100g2ys1
mg25q6es1
MG100J2YS1
YTF830
gt25q103
GT15H101
toshiba MG50N2YS9
MG200J2YS1
mg75n2ys1
MG75J2YS1
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2SK1082
Abstract: 2SK1082-01 SC-65
Text: 2SK1082-01 SIPMOS FUJI POWER MOS-FET N-CHANIMEL SILICON POWER MOS-FET FAP-II SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V GSs = ± 3 0 V Guarantee
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PDF
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2SK1082-01
SC-65
Tch-25
100ms
2SK1082
SC-65
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A2293
Abstract: NF C 93-400 2SK1943-01
Text: 2SK1943-01 FU JI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hiyh voltage • V r>;- ±30V Guarantee • Avalanche-proof
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PDF
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O-220AB
SC-46
A2293
NF C 93-400
2SK1943-01
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