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    FET 5080 Search Results

    FET 5080 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation

    FET 5080 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7610-100B

    BUK7510-100B

    Abstract: 7610-100B
    Text: BUK7510-100B N-channel TrenchMOS standard level FET Rev. 03 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7510-100B BUK7510-100B 7610-100B

    BUK7610-100B

    Abstract: No abstract text available
    Text: BUK7610-100B N-channel TrenchMOS standard level FET Rev. 03 — 12 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7610-100B BUK7610-100B

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK7510-100B N-channel TrenchMOS standard level FET Rev. 4 — 4 January 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7510-100B

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK7510-100B N-channel TrenchMOS standard level FET Rev. 4 — 4 January 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7510-100B

    7610

    Abstract: 7610-100B
    Text: BUK75/7610-100B TrenchMOS standard level FET Rev. 02 — 19 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.


    Original     		PDF BUK75/7610-100B BUK7510-100B O-220AB) BUK7610-100B OT404 7610 7610-100B

    Untitled

    Abstract: No abstract text available
    Text: BUK75/7610-100B TrenchMOS standard level FET Rev. 01 — 09 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.


    Original     		PDF BUK75/7610-100B BUK7510-100B O-220AB) BUK7610-100B OT404

    Untitled

    Abstract: No abstract text available
    Text: CFK2062-P5 ÊSH9t Product S p ecificatio n s M ay 1996 iof4 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package


    OCR Scan     		PDF CFK2062-P5

    4318J

    Abstract: shab
    Text: JCEIEMTEK Product S p ecificatio n s M ay 1996 iof4 Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package CFK2062-P1 800 to 900 MHz +30 dBm Power GaAs FET


    OCR Scan     		PDF CFK2062-P1 4318J shab

    SE 0947

    Abstract: FET 3878 0942S application of ic 7474
    Text: ICELERiTEK CFK2162-P1 800 to 900 MHz +34 dBm Power GaAs FET Product Specifications M ay 1996 1 o f 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products


    OCR Scan     		PDF CFK2162-P1 SE 0947 FET 3878 0942S application of ic 7474

    Untitled

    Abstract: No abstract text available
    Text: SSiSR Ê TE K Product Specifications M ay 1996 1 of 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package


    OCR Scan     		PDF CFK2062-P3

    FET 4953

    Abstract: EL 431 044 PBA FET CFK2162-P5 CFK2162-P5-000T R15-G IGD 507 an
    Text: « i e o i K Product S p ecificatio n s D ecem ber 1997 iof4 2.3 to 2.5 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products


    OCR Scan     		PDF CFK2162-P5 CFK2162-P5 1T745D3 FET 4953 EL 431 044 PBA FET CFK2162-P5-000T R15-G IGD 507 an

    Untitled

    Abstract: No abstract text available
    Text: « i f i i m i CFK2162-P3 r Product Specifications D ecem b er 1997 iof4 1.8 to 2.0 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products


    OCR Scan     		PDF CFK2162-P3 CFK2162-P3

    2794J

    Abstract: AFL SO-8
    Text: 5 €SLER!TEK CFK2162-P5 2.3 to 2.5 GHz +34 dBm Power GaAs FET P roduct S p ec ifica tio n s M ay 19 96 1 of 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products


    OCR Scan     		PDF CFK2162-P5 2794J AFL SO-8

    IGD 507 an

    Abstract: No abstract text available
    Text: m CDIKV Product S pecificatio n s D ecem ber 1 9 9 7 CFK2162-P5 2.3 to 2.5 GHz +34 dBm Power GaAs FET 1 of 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products


    OCR Scan     		PDF CFK2162-P5 CFK2162-P5 1T745D3 IGD 507 an

    5Bt fet

    Abstract: No abstract text available
    Text: 'CB U a n T B r Product S pecifications D e cem b er 1 9 9 7 iof4 CFK2062-P5 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package


    OCR Scan     		PDF CFK2062-P5 CFK2062-P5 5Bt fet

    lambda LDS

    Abstract: CFK2062-P1 CFK2062-P1-000T ita27
    Text: CFK2062-P1 P ro d u c t S p e c ific a tio n s D ecem ber 1997 1 of 4 800 to 900 MHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package


    OCR Scan     		PDF CFK2062-P1 CFK2062-P1 0000b7D lambda LDS CFK2062-P1-000T ita27

    PBA FET

    Abstract: CFK2062-P5 CFK2062-P5-000T
    Text: s i m B P H m P rod u ct S p e cifica tio n s D ecem b er 1997 iof4 CFK2062-P5 r 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package


    OCR Scan     		PDF CFK2062-P5 CFK2062-P5 PBA FET CFK2062-P5-000T

    transistor C5080

    Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
    Text: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295


    OCR Scan     		PDF 3SK228 3SK239A 3SK309 3SK186 3SK295 3SK194 BB101M BB101C 3SK296 2SC2732 transistor C5080 transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965

    Untitled

    Abstract: No abstract text available
    Text: 9 e SLE B Ê TE K P roduct S p ecificatio n s D e ce m b er 1 9 9 7 1 o f 4 CFK2062-P1 800 to 900 MHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package


    OCR Scan     		PDF CFK2062-P1 CFK2062-P1 30nintended 0000t

    CFK2062-P3

    Abstract: CFK2062-P3-000T pt 4115 FET 4953
    Text: .fCICDITClf P ro d u c t S p e c ific a tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package


    OCR Scan     		PDF CFK2062-P3 CFK2062-P3 CFK2062-P3-000T pt 4115 FET 4953

    Untitled

    Abstract: No abstract text available
    Text: 9 ~ n ~ f a g j g ffg y Product S p ec ifica tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package


    OCR Scan     		PDF CFK2062-P3 CFK2062-P3 0000b74

    7474 pin out diagram

    Abstract: FET 4953 lm 7223 PBA FET CFK2162-P1 CFK2162-P1-000T k 3878 4953 FET LM 7926
    Text: f r a E D i K CFK2162-P1 i r P ro d u c t S p e c ific a tio n s D e c e m b e r 1 9 9 7 1 o f 4 800 to 900 MHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45 % Linear Power Added Efficiency


    OCR Scan     		PDF CFK2162-P1 CFK2162-P1 00bfl2 7474 pin out diagram FET 4953 lm 7223 PBA FET CFK2162-P1-000T k 3878 4953 FET LM 7926

    lambda LMS

    Abstract: 5B42 CFK2162-P3 CFK2162-P3-000T
    Text: « i m w i P ro d u c t S p e c ific a tio n s D ecem ber 1997 iof4 CFK2162-P3 r 1.8 to 2.0 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power O utput □ P roprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third O rder Products


    OCR Scan     		PDF CFK2162-P3 CFK2162-P3 lambda LMS 5B42 CFK2162-P3-000T