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    FET 355 Search Results

    FET 355 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    FET 355 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NEC k 3654

    Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
    Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device


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    NE850R599A NE850R599A CODE-99 NEC k 3654 gl 7445 nec k 813 nec 8725 gm 8562 5942 A 7601 0549 PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


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    REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    HIP4081 pwm controller

    Abstract: AN9325 hip4081 HIP4080 HIP4081 amplifier circuit diagram class D stepper motor hip4081 HIP4081A HIP4081IB HIP4081IP
    Text: HIP4081 80V/2.5A Peak, High Frequency Full Bridge FET Driver November 1996 Features Description • Independently Drives 4 N-Channel FET in Half Bridge or Full Bridge Configurations The HIP4081 is a high frequency, medium voltage Full Bridge N-Channel FET driver IC, available in 20 lead plastic


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    HIP4081 HIP4081 95VDC 1000pF HIP4081 pwm controller AN9325 HIP4080 HIP4081 amplifier circuit diagram class D stepper motor hip4081 HIP4081A HIP4081IB HIP4081IP PDF

    Untitled

    Abstract: No abstract text available
    Text: MOS FET Relays G3VM-355J/JR MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single SOP Package. General-purpose high On-resistance Series Added. • SPST-NO/SPST-NC models with an 8-pin SOP package in the 350-V load voltage series.


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    G3VM-355J/JR G3VM-355JR X302-E-1 PDF

    G3VM-355J

    Abstract: G3VM-355JR
    Text: MOS FET Relays G3VM-355J/JR MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single SOP Package. General-purpose high On-resistance Series Added. • SPST-NO/SPST-NC models with an 8-pin SOP package in the 350-V load voltage series.


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    G3VM-355J/JR G3VM-355JR X302-E-1 G3VM-355J G3VM-355JR PDF

    G3VM-355J

    Abstract: G3VM-355JR
    Text: MOS FET Relays G3VM-355J/JR MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single SOP Package. General-purpose high On-resistance Series Added. • SPST-NO/SPST-NC models with an 8-pin SOP package in the 350-V load voltage series.


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    G3VM-355J/JR G3VM-355JR X302-E-1 G3VM-355J G3VM-355JR PDF

    5 pin relay NO NC

    Abstract: G3VM-355J
    Text: MOS FET Relays G3VM-355J New MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single SOP Package • SPST-NO/SPST-NC models with an 8-pin SOP package now available in the 350-V load voltage series. • Continuous load current of 120 mA.


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    G3VM-355J G3VM-355J 5 pin relay NO NC PDF

    Untitled

    Abstract: No abstract text available
    Text: MOS FET Relays G3VM-355J New MOS FET Relay with Both SPST-NO and SPSTNC Contacts Incorporated in a Single SOP Package • SPST-NO/SPST-NC models with an 8-pin SOP package now available in the 350-V load voltage series. • Continuous load current of 120 mA.


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    G3VM-355J G3VM-355J JB301-E3-01 PDF

    Omron

    Abstract: No abstract text available
    Text: G3VM-355CR/FR MOS FET Relays SPST-NO + SPST-NC MOS FET Relay in a Single DIP Package. • SPST-NO/SPST-NC models now included in the 350-V load voltage series. RoHS compliant Note: The actual product is marked differently from the image shown here. • Application Examples


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    G3VM-355CR/FR K251-E1-01 Omron PDF

    G3VM-355JR

    Abstract: Omron
    Text: G3VM-355JR MOS FET Relays SPST-NO + SPST-NC MOS FET Relay in a Single SOP Package. • SPST-NO/SPST-NC models with SOP 8-pin package now available in the 350-V load voltage series. RoHS compliant Note: The actual product is marked differently from the image shown here.


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    G3VM-355JR K255-E1-01 G3VM-355JR Omron PDF

    Untitled

    Abstract: No abstract text available
    Text: MOS FET Relays G3VM-355JR New MOS FET Relay with Both SPST-NO and SPSTNC Contacts Incorporated in a Single SOP Package • SPST-NO/SPST-NC models with an 8-pin SOP package now available in the 350-V load voltage series. • Continuous load current of 120 mA.


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    G3VM-355JR G3VM-355JR JB301-E3-01 PDF

    HIP4081 pwm controller

    Abstract: AN9325 schematic diagram h bridge ups HIP4081 stepper motor hip4081 HIP4080 HIP4081A HIP4081IB HIP4081IP HARRIS SEMICONDUCTOR APPLICATION NOTES
    Text: HIP4081 S E M I C O N D U C T O R 80V/2.5A Peak, High Frequency Full Bridge FET Driver March 1995 Features Description • Independently Drives 4 N-Channel FET in Half Bridge or Full Bridge Configurations The HIP4081 is a high frequency, medium voltage Full Bridge NChannel FET driver IC, available in 20 lead plastic SOIC and DIP


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    HIP4081 HIP4081 95VDC 1000pF 1-800-4-HARRIS HIP4081 pwm controller AN9325 schematic diagram h bridge ups stepper motor hip4081 HIP4080 HIP4081A HIP4081IB HIP4081IP HARRIS SEMICONDUCTOR APPLICATION NOTES PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJE0605JPD REJ03G1803-0100 Rev.1.00 Apr 01, 2010 Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of


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    RJE0605JPD REJ03G1803-0100 limi9044 PDF

    G3VM-355C

    Abstract: G3VM-355CR G3VM-355F G3VM-355FR
    Text: MOS FET Relays G3VM-355C/CR/F/FR MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single DIP Package. General-purpose Models Added. • • • • • SPST-NO/SPST-NC models included in the 350-V load series. Continuous load current of 120 mA.


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    G3VM-355C/CR/F/FR G3VM-355CR X302-E-1 G3VM-355C G3VM-355CR G3VM-355F G3VM-355FR PDF

    G3VM-355C

    Abstract: G3VM-355CR G3VM-355F G3VM-355FR
    Text: MOS FET Relays G3VM-355C/CR/F/FR MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single DIP Package. General-purpose Models Added. • • • • • SPST-NO/SPST-NC models included in the 350-V load series. Continuous load current of 120 mA.


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    G3VM-355C/CR/F/FR G3VM-355CR X302-E-1 G3VM-355C G3VM-355CR G3VM-355F G3VM-355FR PDF

    Untitled

    Abstract: No abstract text available
    Text: MOS FET Relays G3VM-355CR/FR MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single DIP Package. • • • • SPST-NO/SPST-NC models included in the 350-V load series. Continuous load current of 120 mA. Dielectric strength of 2,500 Vrms between I/O.


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    G3VM-355CR/FR G3VM-355CR G3VM-355FR X302-E-1c PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device


    OCR Scan
    NE850R599A NE850R599A CODE-99 PDF

    cd 1619 CP AUDIO

    Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
    Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device


    OCR Scan
    NE850R599A NE850R599A CODE-99 cd 1619 CP AUDIO cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725 PDF

    NE850R5

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device


    OCR Scan
    NE850R5 NE850R599 CODE-99 PDF

    63000-000

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device


    OCR Scan
    NE850R5 E850R599 CODE-99 63000-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: B U R R - B R O W N <i [ INA111 ] High Speed FET-lnput INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • FET INPUT: lB = 20pA max The INA111 is a high speed, FET-input instrumenta­ tion amplifier offering excellent performance. • HIGH SPEED: Ts = 4|is G = 100, 0.01%


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    INA111 INA111 106dB 17313b5 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIP4081 Semiconductor 80V/2.5A Peak, High Frequency Full Bridge FET Driver November 1996 Description Features Independently Drives 4 N-Channel FET in Half Bridge or Full Bridge Configurations The HIP4081 is a high frequency, medium voltage Full Bridge N-Channel FET driver IC, available in 20 lead plastic


    OCR Scan
    HIP4081 HIP4081 1000pF PDF

    Untitled

    Abstract: No abstract text available
    Text: OPA137 OPA2137 0PA4137 B U R R -B R O W N LOW COST FET-INPUT OPERATIONAL AMPLIFIERS MicroAmplifier" Series FEATURES DESCRIPTION • FET INPUT: lB = 5pA • LOW OFFSET VOLTAGE: 1.5mV OPA137 series FET-input operational amplifiers are designed for low cost and miniature applications. In addition to small


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    OPA137 OPA2137 OPA4137 OT-23-5, OT-23-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: S H IP 4 0 8 1 M A S S 'S 80V/2.5A Peak, High Frequency Full Bridge FET Driver January 1995 Description Features Independently Drives 4 N-Channel FET In Half Bridge or Full Bridge Configurations The HIP4081 is a high frequency, medium voltage Full Bridge NChannel FET driver IC, available in 20 lead plastic SOIC and DIP


    OCR Scan
    HIP4081 95VDC 1000pF 00b017b PDF