Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FET 2SK2761 Search Results

    FET 2SK2761 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AD8224ACPZ-WP Analog Devices Dual Channel FET Instrumentati Visit Analog Devices Buy
    AD820ARMZ-R7 Analog Devices FET INPT, SINGLE SPLY AMP Visit Analog Devices Buy
    ADA4817-1ARDZ-R7 Analog Devices High Speed FET Input Amp Visit Analog Devices Buy
    AD8220WARMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy
    AD8220BRMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy

    FET 2SK2761 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2761

    Abstract: No abstract text available
    Text: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		PDF 2SK2761-01MR 2SK2761

    2SK2761-01MR

    Abstract: 2SK2761
    Text: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		PDF 2SK2761-01MR 2SK2761-01MR 2SK2761

    2SK2761

    Abstract: mosfet 10a 600v 2SK2761-01MR
    Text: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		PDF 2SK2761-01MR 2SK2761 mosfet 10a 600v 2SK2761-01MR

    2SK4111

    Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
    Text: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


    Original     		PDF 2SK258 O-204AA/TO-3 2SK259 2SK258H O-218 2SK695 2SK695A 2SK4111 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V 10A 50W Outline Drawing > Features - IQ High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    OCR Scan     		PDF 2SK2761-01MR Tc-25