2SK1045
Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
Text: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100
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2SC642A
O-204AA/TO-3:
2SC643
2N4030DIE
2C4030
2SC643A
2SK1045
2SK1048
2SK1050
2SK1044
2SD2791
2SK1011
2sd2498
2SD299
2SD300
2SD373
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transistor 2N3563
Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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2SK1225
Abstract: 2SK1206
Text: IHITM HHThEOS 0013257 77fl blE D 2SK1206,ZSK122d SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching Regulator, DC-DC Converter
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2SK1225
2SK1206
M41b505
G0132b0
2SK1206,
2SK1225-
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DIODE T25 4 ko
Abstract: 2SK1206 40V 12A N-Channel MOS 2SK1225 HIV DIODE DIODE T25 4 lo
Text: HHThEOS 0013257 77fl blE D 2SK1206,ZSK122d IHITM SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching Regulator, DC-DC Converter
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2SK1225
2SK1206
G0132b0
2SK1206,
2SK1225-
DIODE T25 4 ko
40V 12A N-Channel MOS
HIV DIODE
DIODE T25 4 lo
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2sk1203
Abstract: DA468
Text: • 2SK1203 4iHb2DS GG13245 TSb ■ H I T 4 HITACHI/ OPTOELECTRONICS blE ]> SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • • Low On-Resistance High Speed Switching • Low Drive Current 1 .G ile 2 . D rain (Flan ge) 3 . S o u rce
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2SK1203
GG13245
SK1203
2sk1203
DA468
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2SK1202
Abstract: 2SK120 koss
Text: • 2SK1202 MHIbSQS 0013241 3Q0 ■ HITM HITACHI / OPTOELECTRONICS ^ 16.0am ^ SILICON N-CHANNEL MOS FET blE D" g HIGH SPEED POWER SW ITCHING 3 ■ FEATURES 1 .G ate, 2 .D rain (Flange) 3. Source (Dimensions in ran ) L Ï* • • • • • Low On-Resistance
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2SK1202
2SK12
2SK1202
2SK120
koss
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2SK1202
Abstract: TTL-T100
Text: 2SK1202- • L|inb2ü5 ÜD13241 30Q ■ H I T M HITACHI/ OPTOELECTRONICS blE D" SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES 1.G ate, 2 .D rain (Flange) 3. Source (Dimensions in nm ) ■jP • Low On-Resistance • High Speed Switching
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2SK1202SILICON
D13241
Tc--25
2SK1202
TTL-T100
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kds 8a
Abstract: KDS 7c KDS 4a a7ds
Text: 2SK1204 SILICON N-CHANNEL MOS FET mm m •I • X 'f ? f - > ? ' P DC —DC 3 .x , 0.9 >ut 5.45 ± 0 .5 {Ta=25”C • ABSOLUTE MAXIMUM RATINGS Item Drain-Source Voltage Gâte* Source Voltage Drain C urrent Drain Peak Current Body-Drain Diode Reverse Drain Current
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Tc-25
Kds-10V
-100A/
kds 8a
KDS 7c
KDS 4a
a7ds
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2SK1202
Abstract: LM 464 diode silicon P channel MOS FET J 350 Hitachi Scans-001 koss
Text: • 2SK1202 MHIbSQS 0013241 300 ■ HITM HITACHI/ÍOPTOELECTRONICS ^ 16.0am ^ SILICON N-CHANNEL MOS FET b lE »' g HIGH SPEED POWER SW ITCHING ■ FEATURES • • • • • 1.G ate, 2 . D ra in F la n g e ) Low On-Resistance High Speed Switching Low Drive Current
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2SK1202
2SK1202
LM 464 diode
silicon P channel MOS FET J 350
Hitachi Scans-001
koss
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K1201
Abstract: No abstract text available
Text: MMTbEDS 0D13E37 TÔT • H I T M 2SK1201 HI TACHI/ OPTOELECTRONICS blE D S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING ■ FEATURES • 1.G ate 2. D rain (Flange) 3. Source (Dimensions in mm) Low On-Resistance • High Speed Switching
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2SK1201
0D13E37
DD1323S
K1201
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D3A DIODE
Abstract: No abstract text available
Text: 2SK1203 SILICON N-CHANNEL MOS FET •& • X 'f fi -vi->-r • X 'f y -f- > ^ U ^ .a U - ? DC—DC ^ 3.6 B 0.9 1. Gate 2. Drain Flange 3. Source (D imensions in mm) rue i u- rl 5.45 ± 0.5 5.45 ± 0 5 (TO-3P) ■ ABSOLUTE MAXIMUM RATINGS ( 7 a = 25°C) R ating
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Tc-25
Ta-25
Vos-720V,
Vds-20V*
00A/j
D3A DIODE
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SG-313
Abstract: SG313 2sk1204
Text: 2SK1204 • MM Tb EÜ S O Q I B E H ^ bTl ■ H I T M HITACHI/ O P T O E L E C T R O N I C S blE J> SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current 1. Gate 2. Drain (Flange)
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2SK1204
SG-313
SG313
2sk1204
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2SK1204
Abstract: 100J ATES
Text: 2 S K 1 2 0 4 • MHTbEGS 001324^ bTl ■ H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 4 ■ FEATURES • • • • • U25 Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown Suitable for Switching Regulator and
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2SK1204
GD13ES1
2SK1204
100J
ATES
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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FET 2SK125
Abstract: FET 2SK109 2SK109 2SK105 2SK97 2SK104 2sk109a 2SK120 2SK107 2SK124
Text: - 32 - m. % tt ffl € ÌÉ m & f ;E Y * 1 Ä ^ fë $ P d/Pc h ft K 2S K 8 4 föT LF LN A 2SK85 NEC X-Band LN A/OSC 2 S K 8 7 H HÍZ1 LF LN A 2S K 8 9 B ÎL GaAs/SB m V* (V) *t* (V) * ft (W) (A) N D -5 5 G D O 10 b G 100m N D -1 0 G D O 100m D 500m N D
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2SK84
2SK85
2SK87
2SK89
2SK92
2SK93
2SK94
2SK97
2SK103
2SK104
FET 2SK125
FET 2SK109
2SK109
2SK105
2sk109a
2SK120
2SK107
2SK124
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PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete
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J-23548
K28742
PA 0016 PIONEER
Pioneer PA 0016
transistors br 6822
MPF104
I9951D
Johnson motor 2 607 022 013
2SK109 equivalent
V01000J
DG5043CK
IRF4431
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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