rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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Untitled
Abstract: No abstract text available
Text: Datasheet Power LSI series for Digital Camera and Digital Video Camera 7ch Integrated FET System Switching Regulator + 1ch LDO BD9381GUL ●Function block diagram ●Outline 7-channel Switching Regulator Controller for Digital Camera that contains an internal FET, 1-Channel LDO and 1-Channel
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BD9381GUL
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Untitled
Abstract: No abstract text available
Text: Datasheet Power LSI series for Digital Camera and Digital Video Camera 7ch Integrated FET System Switching Regulator + 1ch LDO BD9381GUL ●Function block diagram ●Outline 7-channel Switching Regulator Controller for Digital Camera that contains an internal FET, 1-Channel LDO and 1-Channel
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BD9381GUL
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sot669 footprint
Abstract: PH3230S
Text: PH3230S N-channel TrenchMOS intermediate level FET Rev. 04 — 27 November 2009 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PH3230S
PH3230S
sot669 footprint
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PH3230S
Abstract: No abstract text available
Text: PH3230S N-channel TrenchMOS logic level FET M3D748 Rev. 02 — 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package. Product availability: PH3230S in SOT669 LFPAK .
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PH3230S
M3D748
PH3230S
OT669
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PH3230S
Abstract: No abstract text available
Text: PH3230S N-channel TrenchMOS logic level FET M3D748 Rev. 03 — 02 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level compatible
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PH3230S
M3D748
OT669
PH3230S
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GRM188B11A105KA61
Abstract: NR4012-4R7M HSON8 GRM31CB31E106KA75L GRM31CB31
Text: Single-chip Type with Built-in FET Switching Regulator Series Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET No.09027EBT05 BD8313HFN Description ROHM’s Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8313HFN
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09027EBT05
BD8313HFN
V/12V
BD8313HFN
R0039A
GRM188B11A105KA61
NR4012-4R7M
HSON8
GRM31CB31E106KA75L
GRM31CB31
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GRM188B11A105KA61
Abstract: No abstract text available
Text: Single-chip Type with Built-in FET Switching Regulator Series Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8313HFN ● General Description ROHM’s Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET
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BD8313HFN
BD8313HFN
V/12V
R0039A
GRM188B11A105KA61
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GRM188B11A105KA61
Abstract: No abstract text available
Text: Single-chip Type with Built-in FET Switching Regulators Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8313HFN No.11027EET05 ●Description BD8313HFN produces step-down output including 1.2, 1.8, 3.3, or 5 V from 4 batteries, batteries such as Li2cell or Li3cell,
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BD8313HFN
11027EET05
BD8313HFN
V/12V
R1120A
GRM188B11A105KA61
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Untitled
Abstract: No abstract text available
Text: Single-chip Type with Built-in FET Switching Regulators Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8313HFN No.11027EDT05 ●Description BD8313HFN produces step-down output including 1.2, 1.8, 3.3, or 5 V from 4 batteries, batteries such as Li2cell or Li3cell,
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BD8313HFN
11027EDT05
BD8313HFN
V/12V
R1120A
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Untitled
Abstract: No abstract text available
Text: Single-chip Type with Built-in FET Switching Regulators Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8313HFN No.13027EET05 ●Description BD8313HFN produces step-down output including 1.2, 1.8, 3.3, or 5 V from 4 batteries, batteries such as Li2cell or Li3cell,
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BD8313HFN
13027EET05
BD8313HFN
V/12V
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Untitled
Abstract: No abstract text available
Text: Single-chip Type with Built-in FET Switching Regulators Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8313HFN No.13027EET05 ●Description BD8313HFN produces step-down output including 1.2, 1.8, 3.3, or 5 V from 4 batteries, batteries such as Li2cell or Li3cell,
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BD8313HFN
13027EET05
BD8313HFN
V/12V
R1102A
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Untitled
Abstract: No abstract text available
Text: BD8313HFN Single-chip Type with Built-in FET Switching Regulators Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8313HFN No.11027EET05 ●Description BD8313HFN produces step-down output including 1.2, 1.8, 3.3, or 5 V from 4 batteries, batteries such as Li2cell or Li3cell,
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BD8313HFN
11027EET05
BD8313HFN
V/12V
R1120A
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NR4012-4R7M
Abstract: r462 HSON8 grm31cbe106ka75l GRM188B11A105KA61
Text: Single-chip Type with Built-in FET Switching Regulator Series Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET No.10027ECT05 BD8313HFN Description BD8313HFN produces step-down output including 1.2, 1.8, 3.3, or 5 V from 4 batteries, batteries such as Li2cell or Li3cell, etc.
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10027ECT05
BD8313HFN
BD8313HFN
V/12V
R1010A
NR4012-4R7M
r462
HSON8
grm31cbe106ka75l
GRM188B11A105KA61
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BZV55C6V2
Abstract: No abstract text available
Text: AN379 Application Note Design Guide for a CS1680 Dimmable LED Driver IC for Low-voltage Lighting 1 Overview of the CS1680 The CS1680 is a cascade boost-buck dimmable LED driver for the 12V halogen lamp-replacement market. The CS1680 uses a Cirrus Logic proprietary intelligent digital control that provides exceptional single-lamp and
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AN379
CS1680
CS1680
RK73H1JTTD5111F
ERJ3EKF5111V
WR06X5111FTL
CRCW060320K0JNEA
BZV55C6V2
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tda 8275
Abstract: tda 8875 TDA 11136 IC tda 2001
Text: bq2085-V1P3 www.ti.com SLUS598 − FEBRUARY 2004 SBSĆCOMPLIANT GAS GAUGE IC FOR USE WITH THE bq29311 FEATURES D Provides Accurate Measurement of Available D D D D D D D D Charge in Li-Ion and Li-Polymer Batteries Supports the Smart Battery Specification SBS V1.1
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bq2085-V1P3
SLUS598
bq29311
tda 8275
tda 8875
TDA 11136
IC tda 2001
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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Untitled
Abstract: No abstract text available
Text: WTELEDYNE COMPONENTS VQ1000 N-CHANNEL ENHANCEMENT-MODE QUAD DMOS POWER FET ARRAY FEATURES • ■ ■ ■ Inherent Current Sharing Capability when Paralleled Simple Straightforward DC Biasing Extended Safe Operating Area CMOS and TTL Compatible APPLICATIONS
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VQ1000
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60f30
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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BUK9524-55
T0220AB
60f30
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK2826 TO-220AB FEATURES 2SK2826-S TO-262 • Super Low On-State Resistance
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2SK2826
O-220AB
2SK2826-S
O-262
2SK2826-ZJ
O-263
D11273EJ2V0DS00
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Untitled
Abstract: No abstract text available
Text: 2SK2796 L , 2SK2796 (S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance EWn) = 0.12Otyp. • 4V gate drive devices. • High speed switching Outline DPAK i # 1. 2. 3. 4. 1 122 G ate Drain Source Drain ADE-208-534 A
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2SK2796
12Otyp.
ADE-208-534
oK2796
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Untitled
Abstract: No abstract text available
Text: 3SK297 Silicon N-Channel Dual Gate MOS FET HITACHI Application U H F /V H F RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline MPAK-4 1. 2. 3. 4. 1120 Source Gatel Gate2 Drain ADE-208-389
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3SK297
ADE-208-389
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pm2222a
Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
Text: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT
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BA582
OD123
BA482
BA682
BA683
BA483
BAL74
BAW62,
1N4148
pm2222a
SOD80C PHILIPS
BCB47B
1N4148 SOD80C
PMBTA64
PXTA14
BF960
FET BFW11
BF345C
BC558B PHILIPS
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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