ZTX750
Abstract: ZTX650 100-C ZTX751 ZTX752 ZTX753 ferranti c6011 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES SE74
Text: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation a t Tamb = 25*C t • 2A continuous lc • • Excellent gain characteristics to 2A High V CE0: up to 100 volts
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ZTX750
ZTX751
ZTX752
ZTX753
100mA
100ms
ZTX650
100-C
ZTX753
ferranti
c6011
ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES
SE74
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ZTX753
Abstract: ZTX750 ZTX650 ZTX752 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74 ZTX751
Text: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation at T amb = 2 5 *C t • 2A con tin uous lc • Excellent gain characteristics to 2A • H igh V C E0 : up to 100 volts
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ZTX750
ZTX751
ZTX752
ZTX753
100mA
100ms
ZTX753
ZTX650
6.8j 100v
Scans-00107864
c6011
Ferranti Semiconductors
SE74
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BC337B
Abstract: BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751 BFY50
Text: ELEC TRIC AL CHARACTERISTICS N.P.N. M E D IU M POW ER h "ht V cbo VcEO ICBC Min. Min. Max.atVcB @ lc Dice Type V V nA V Min. Max. m A ZTX653 ZTX453 ZTX652 ZTX452 M P SA 0 6 ZTX651 ZTX451 BFY50 M P SA 0 5 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C BFV52 BC338A
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ZTX653
ZTX453
ZTX652
ZTX452
MPSA06
ZTX651
ZTX451
BFY50
MPSA05
ZTX650
BC337B
BC338B
BC338C
BC327B
BC328B
BC337C
ZTX550
BFV52
ZTX751
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ZT Ferranti
Abstract: BF4935P SE-169 TX-550 X752 X449
Text: ZETEX S E M I C O N D U C T O R S =IS]> D • clci7 Q S 78 0 0 0 S 0 7 S 1 M Z E T B ~T-Tl-Ol Super E-line transistors TABLE 1 : NPN/PNP SUPER E-LINE These devices offer the ultimate performance for TQ-92 style package, they have been designed to operate and provide useful gain at current
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TQ-92
ZTX752
ZTX751
ZTX749
SO-96
107il/D
SE172
ZT Ferranti
BF4935P
SE-169
TX-550
X752
X449
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BC337C
Abstract: bc327c BC338C bc337b 2N1131 2N1132 2N3053 2N4037 2N696 BC107
Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 500 1.5 150 15 500 1.5 150 1000 0.35 150 at Continued Min f T at Pto,
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2N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BC107
BC177
BCY59
BC337C
bc327c
BC338C
bc337b
2N1131
2N1132
2N4037
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BC338C
Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military
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MPSA55
ZTX750
ZTX550
BC327A
BC327B
BC327C
BC328A
BC328B
BC328C
BC338C
2N1893
2N2102
2N2405
2N4036
BFX84
BFX85
ZT86
ZT88
ZT91
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BC338C
Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.
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ZTX455
ZTX454
ZTX653
ZTX753
ZTX453
MPSA55
ZTX750
ZTX550
BC327A
BC327B
BC338C
ZTX452
MPSA06
MPSA56
ZTX651
ZTX652
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bc177
Abstract: BFS98 BFS59 ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Text: TABLE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and OUTPUT ST A G ES, O SC ILLA TO RS, AND GEN ERAL PURPO SE
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ZTX552
ZTX452
MPSA56
MPSA06
BC556P
BC546P
ZTX551
ZTX451
BFS98
MPSA55
bc177
BFS59
ZTX452
BC546P
BFS61
MPSA06
ZTX451
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BFS98
Abstract: ZTX452 ZTX750 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451 ZTX453
Text: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE
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ZTX453
ZTX452
ZTX552
MPSA06
MPSA56
BC546P
BC556P
ZTX451
MPSA55
ZTX750
BFS98
BC556P
BFS61
MPSA56
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ZTX453
Abstract: BFS98 BC338C ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Text: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AM PLIFIERS, DRIVERS and OUTPUT STA G ES, OSCILLATORS, AND GENERAL PURPOSE
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ZTX453
ZTX452
ZTX552
MPSA06
MPSA56
BC546P
BC556P
ZTX451
MPSA55
ZTX750
BFS98
BC338C
BC556P
BFS61
MPSA56
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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