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    FE1A THRU FE1D Search Results

    FE1A THRU FE1D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    MP-5TRJ12EXTE-007 Amphenol Cables on Demand Amphenol MP-5TRJ12EXTE-007 Modular Extension Cable, Straight-Thru, RJ12 7ft Datasheet
    MP-5FRJ11STWS-014 Amphenol Cables on Demand Amphenol MP-5FRJ11STWS-014 Flat Silver Satin Modular Straight-Thru Cables, RJ11 / RJ11 14ft Datasheet
    MP-5FRJ12STWS-025 Amphenol Cables on Demand Amphenol MP-5FRJ12STWS-025 Flat Silver Satin Modular Straight-Thru Cables, RJ12 / RJ12 25ft Datasheet

    FE1A THRU FE1D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DO-204AP

    Abstract: No abstract text available
    Text: FE1A THRU FE1D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Forward Current - 1.0 Ampere * Reverse Voltage - 50 to 200 Volts E D FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency


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    PDF MIL-S-19500 DO-204AP 50mVp-p DO-204AP

    FE1D

    Abstract: DO-204AP
    Text: FE1A thru FE1D Glass Passivated Ultrafast Rectifier DO-204AP 0.034 0.86 0.028 (0.71) DIA. d* e t n Features e t Pa ♦ High temperature metallurgically bonded construction ♦ Cavity-free glass passivated junction ♦ Superfast recovery time for high efficiency


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    PDF DO-204AP MIL-S-19500 50mVp-p FE1D DO-204AP

    FE1D

    Abstract: DO-204AP
    Text: FE1A THRU FE1D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Forward Current - 1.0 Ampere * Reverse Voltage - 50 to 200 Volts E D FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency


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    PDF MIL-S-19500 DO-204AP 50mVp-p FE1D DO-204AP

    FE1D

    Abstract: FE1A thru FE1D DO-204AP fe1b
    Text: FE1A thru FE1D Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier 0.034 0.86 0.028 (0.71) DIA. 1.0 (25.4) MIN. • • • • • 0.240 (6.1) MAX. • • • • 0.150 (3.8) 0.100 (2.5) DIA. Reverse Voltage 50 to 200 V


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    PDF DO-204AP MIL-S-19500 50mVp-p 24-Jun-02 FE1D FE1A thru FE1D DO-204AP fe1b

    TO263AA

    Abstract: SMA UF4007 FEP16BT us1m minimelf FEP30DP DO-214AC schottky es1d FEP30GP FEP16GT center tap diodes 100V 15 A FEP16HT
    Text: FAST EFFICIENT RECTIFIERS 1.0 AMPERE TO 30.0 AMPERES INTRODUCTION TO FAST EFFICIENT RECTIFIERS General Semiconductor’s Fast Efficient Rectifiers FER are a natural extension of our Schottky product portfolio. This is accomplished by offering very fast reverse recovery times (as low as 15 nanoseconds) and voltage levels as high as


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    PDF VB32-50 BYVB32-200 O-263AB UG30APT UG30DPT O-247AD FEP30AP FEP30JP O-247A GI2401 TO263AA SMA UF4007 FEP16BT us1m minimelf FEP30DP DO-214AC schottky es1d FEP30GP FEP16GT center tap diodes 100V 15 A FEP16HT

    DO-204AP

    Abstract: No abstract text available
    Text: FE2A thru FE2D Glass Passivated Ultrafast Rectifier DO-204AP 0.034 0.86 0.028 (0.71) DIA. d* e t en Features t a P Reverse Voltage 50 to 200V Forward Current 2.0A • • • • • High temperature metallurgically bonded construction Cavity-free glass passivated junction


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    PDF DO-204AP MIL-S-19500 50mVp-p DO-204AP

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


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    PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


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    PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


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    PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


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    PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


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    PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


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    PDF MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    8YV27-200

    Abstract: VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B
    Text: LOW CURRENT AXIAL FAST EFFICIENT RECTIFIERS FE1A thru FE1D GI1001 thru GI1004 FE2A thru FE2D BYV27-50 thru BYV27-200 G/1tOI thru G11104 DO-2MAP D0-204AP DO-240AP D0-204AP D0204AP G4 G4 G4 G4 G4 1 1 2 2 2.5 3.0 3.5 5.0 6.0 6.0 VR-50 V FE1A GH 001 FE2A BYV27-50


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    PDF VR-50 VR-100 VR-150 VR-300 VR-500 VR-600 VR-1000 GI1001 GI1004 8YV27-200 VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B

    Untitled

    Abstract: No abstract text available
    Text: FE1ATHRU FE1D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Voltage - 50 to 200 Volts Current - 1.0 Amperes FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Glass passivated cavity-free junction Superfast recovery times-epitaxial construction Low forward voltage, high current capability


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    PDF MIL-S-19500 MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: FE1ATHRU FE1D MINIATURE GLASS PASSIVATED FAST EPITAXIAL RECTIFIER Voltage - 50 to 200 Volts Current - 1.0 Ampere FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Glass passivated cavity-free ¡unction Superfast recovery times-epitaxial construction Low forward voltage, high current capability


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    PDF MIL-S-19500 MIL-STD-750,

    BYV266

    Abstract: 8YV28-50 BYV20 BYV20 500 ug2d BYV26-100 by29 FES16FT FES16CT FES16DT
    Text: FAST EFFICEINT RECTIFIERS Part numbering system for all parts excluding JEDEC registered, Pro Electron and industry standard parts. 1. SU RFA CE M O U N T a M E LF S U P E R E C T IF IE R I E G LX X Y -ZZZZ SU RFA CE M O U N T (co n t’d) SM X ES X Y - ZZZ Z


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    PDF -213A DO-213B -214A T0-220AB FEP16AT FEP16JT ITO-220CT FEP16 BYV266 8YV28-50 BYV20 BYV20 500 ug2d BYV26-100 by29 FES16FT FES16CT FES16DT

    FEP160T

    Abstract: UFS408 EGP300 FESB16GT FEP8AT VH800 BYV27-200 DO-204ac fepb16dt FEP16GT FEP16HT
    Text: FAST EFFICIENT RECTIFIERS Part numbering system for all parts excluding JEOEC registered, ProElectron and industry standard parts. 1. SUBFACE MOUNT 1 . SUWACEJjpyMTjsanm AAABXXYPP-ZZZZ e SMX ESXY - ZZZZ EGLXXY-ZZZZ AA A = Type Designator FES = East Efficient gingie


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    PDF DO-213AA DO-213AB DO-214AC DO-214AA DO-214AB UGB18ACT UGB18DCT O-263AB UGB18BCT FEP160T UFS408 EGP300 FESB16GT FEP8AT VH800 BYV27-200 DO-204ac fepb16dt FEP16GT FEP16HT

    C549B

    Abstract: C556A POWER MOSFET DATA BOOK GFB50N03 GUR460 List of rectifier MOSFET BC337 1N414* zener MOSFET BOOK k mbrf10
    Text: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Semiconductor’s part numbers, along with the Data Book in which they appear. For MOSFET page references, see the MOSFET Device Index on pages 5 in this book. 1 5KA6.8 thru 1.5KA43A .Zener/TVS


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    PDF 5KA43A 5KE440CA 1N746 1N759 1N957 UF4001 UF4007 UF5400 UF5408 UG06A C549B C556A POWER MOSFET DATA BOOK GFB50N03 GUR460 List of rectifier MOSFET BC337 1N414* zener MOSFET BOOK k mbrf10

    5SBA20

    Abstract: ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249
    Text: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Sem iconductor's part num bers, along with the Data Book in w hich they appear. For Zener and T V S page references, see the Zener/TVS Device Index on page 5 in th is book.


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    PDF 5KA43A 5KE440CA 1N746 1N759 1N957 1N979 ZTK33C Z4KE100 ZGL41 ZGL41-200A 5SBA20 ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249

    BY27-150

    Abstract: GENERAL INSTRUMENT b80c5000 BY207 S8360 BYX55-600 B80C1500M b40c3700 BY500 general instrument JJTX1N5615 BRIDGE RECTIFIERS b80c3700
    Text: INTRODUCTION General Instrument Corporation Is a major multinational company manufacturing a wide range of products from data systems, broadband communications, and components to semiconductor products. The cor­ poration, which has been in existence over 50 years, has manufacturing


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    PDF sP10-1006 ZGPKM10 2GP1M10A ZGP10-110B ZGP10-12Û ZGP10-12QA ZGP10-1206 ZGP10-130 ZGP10-13QA ZGP10-130B BY27-150 GENERAL INSTRUMENT b80c5000 BY207 S8360 BYX55-600 B80C1500M b40c3700 BY500 general instrument JJTX1N5615 BRIDGE RECTIFIERS b80c3700

    KL SN 102 94v-0

    Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
    Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results


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