FDV301N
Abstract: No abstract text available
Text: June 2009 FDV301N Digital FET , N-Channel General Description Features This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This
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FDV301N
FDV301N
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FDV305N
Abstract: NDS351AN NDS331N FDN327N supersot-3 FDV301N MOSFET SOT-23 FDV302P MMBF170 rohs FDN335N
Text: Discrete MOSFET SOT-23 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SOT-23/SuperSOT-3 N-Channel FDN339AN 20 Single - 0.035 0.05 - 7 3 0.5 FDN371N 20 Single - 0.05 0.06
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OT-23
OT-23/SuperSOT-3
FDN339AN
FDN371N
FDN327N
FDN335N
NDS335N
NDS331N
FDV305N
FDN340P
FDV305N
NDS351AN
NDS331N
FDN327N
supersot-3
FDV301N
MOSFET SOT-23
FDV302P
MMBF170 rohs
FDN335N
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Fairchild FDV301N
Abstract: FDV301N FDV301N SOT23 D EEFUE0D271R FAN5242 FDS6680S FDS6690A FDV302P QSOP24 N mosfet sot-23
Text: www.fairchildsemi.com FAN5242 Voltage Regulator for IMVP-II Notebook Processors Features Description • • • • • • The FAN5242 provides the power, control and protection for the CPU in Intel IMVP-II notebook PC applications. The IC integrates a PWM controller as well as monitoring and
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FAN5242
FAN5242
DS30005242
Fairchild FDV301N
FDV301N
FDV301N SOT23 D
EEFUE0D271R
FDS6680S
FDS6690A
FDV302P
QSOP24
N mosfet sot-23
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g31 m7 te MOTHERBOARD CIRCUIT diagram
Abstract: FDV301N SOT23 D E6327 Application
Text: User's Guide SLLU148 – May 2011 TLK10002 Dual-Channel, 10-Gbps, Multi-Rate Transceiver Evaluation Module This user’s guide describes the usage and construction of the TLK10002 evaluation module EVM . This document provides guidance on proper use by showing some device configurations and test modes. In
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SLLU148
TLK10002
10-Gbps,
g31 m7 te MOTHERBOARD CIRCUIT diagram
FDV301N SOT23 D
E6327 Application
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BSS138 NXP
Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety
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OT223
OT883
PHT8N06LT
BSP030
PMN50XP
PMN55LN
PMN34LN
BSH103
BSS138 NXP
FDC642P
2n7002 nxp
AO3401
BSS123 NXP
BSH103
IRLL014N
PMV65XP
BSH108
BSP250
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Untitled
Abstract: No abstract text available
Text: User's Guide SLUU295 – September 2007 UCD9112 Dual-Phase Synchronous Buck Digital Controller Evaluation Module The UCD9112 is a synchronous buck digital PWM controller designed for point of load power applications. This device integrates dedicated circuitry for dc/dc loop management with a microcontroller core, flash
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SLUU295
UCD9112
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ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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F-91742
ss8050 d 331
tip122 tip127 mosfet audio amp
KSD180
KA1M0880 application note
SS8550 D 331
dual cc BAW62
KA2S0680
ss8550 sot-23
MPSA92(KSP92) equivalent
DIODE 1N4148 LL-34
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VE950
Abstract: LE78D11 Le78D11 Chip Set Users Guide BAV99TA FZT955 JESD22 diode din 4148 CMC-300
Text: Le9502 A Voice Solution Ringing Subscriber Line Interface Circuit VE950 Series APPLICATIONS ORDERING INFORMATION and 5 REN loads Voice over IP/DSL – Integrated Access Devices, Smart Residential Gateways, Home Gateway/Router Cable Telephony – NIU, Set-Top Box, Home Side Box,
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Le9502
VE950
LE78D11
Le78D11 Chip Set Users Guide
BAV99TA
FZT955
JESD22
diode din 4148
CMC-300
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diode T4 Marking
Abstract: U3 SOT23-8
Text: 64-Position OTP Digital Potentiometer AD5171 FUNCTIONAL BLOCK DIAGRAM 64 position One-time programmable OTP set-and-forget resistance setting—low cost alternative over EEMEM Unlimited adjustments prior to OTP activation 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ end-to-end resistance
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64-Position
AD5171
OT-23
AD5171
D03437-0-1/08
diode T4 Marking
U3 SOT23-8
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AD523
Abstract: ad525
Text: 64-Position OTP Digital Potentiometer AD5273 FEATURES APPLICATIONS System calibrations Electronics level settings Mechanical potentiometers and trimmer replacement Automotive electronics adjustments Transducer circuit adjustments Programmable filters up to 6 MHz BW 3
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64-Position
AD5273
OT-23
AD5273
D03224-0-1/08
AD523
ad525
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2N7002 Philips
Abstract: No abstract text available
Text: 64-Position OTP Digital Potentiometer AD5273 FEATURES 64 Positions OTP One-Time-Programmable 1 Set-and-Forget Resistance Setting—Low Cost Alternative Over EEMEM Unlimited Adjustments Prior to OTP Activation 1 k, 10 k, 50 k, 100 k End-to-End Terminal Resistance
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64-Position
AD5273
OT-23-8
2N7002 Philips
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fdv302p data sheet
Abstract: J1 TRANSISTOR DIODE SOT-23 PACKAGE sot-23-3 c6 2n7002 nxp 4.7pF Potentiometer AB Electronics potentiometer blown fuse indicator six order Sallen-Key FDV302P NDS0610
Text: 64-Position OTP Digital Potentiometer AD5273 FEATURES FUNCTIONAL BLOCK DIAGRAM 64 positions One-time programmable OTP 1 set-and-forget Resistance setting—low cost alternative over EEMEM Unlimited adjustments prior to OTP activation 1 kΩ, 10 kΩ, 50 kΩ, 100 kΩ end-to-end terminal resistance
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64-Position
AD5273
OT-23
OT-23
fdv302p data sheet
J1 TRANSISTOR DIODE SOT-23 PACKAGE
sot-23-3 c6
2n7002 nxp
4.7pF Potentiometer
AB Electronics potentiometer
blown fuse indicator
six order Sallen-Key
FDV302P
NDS0610
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2N7002
Abstract: AD5273 AD8601 ADR03 FDV302P NDS0610 OP1177 REF191
Text: 64-Position OTP Digital Potentiometer AD5273 FEATURES FUNCTIONAL BLOCK DIAGRAM 64 positions One-time-programmable OTP 1 set-and-forget Resistance setting—low cost alternative over EEMEM Unlimited adjustments prior to OTP activation 1 kΩ, 10 kΩ, 50 kΩ, 100 kΩ end-to-end terminal resistance
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64-Position
AD5273
OT-23-8
C03224
2N7002
AD5273
AD8601
ADR03
FDV302P
NDS0610
OP1177
REF191
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DDZ13B
Abstract: IRF530S LTC4252 LTC4252-1 LTC4252-2 marking ltrt MOSFET IRF740 as switch LTC4252-1CMS8 ltAGF LTC4252A-2CMS
Text: LTC4252-1/LTC4252-2 LTC4252A-1/LTC4252A-2 Negative Voltage Hot Swap Controllers FEATURES DESCRIPTION n The LTC 4252 negative voltage Hot SwapTM controller allows a board to be safely inserted and removed from a live backplane. Output current is controlled by three stages
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LTC4252-1/LTC4252-2
LTC4252A-1/LTC4252A-2
LTC4214
LTC4220
LT4250
LTC4251/LTC4251-1
OT-23
LTC4253
425212fc
DDZ13B
IRF530S
LTC4252
LTC4252-1
LTC4252-2
marking ltrt
MOSFET IRF740 as switch
LTC4252-1CMS8
ltAGF
LTC4252A-2CMS
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mabuchi rs-555ph-3255
Abstract: BI802-001A MDL-BDC RS-555PH-3255 MABUCHI RS-540SH Mabuchi
Text: Stellaris Brushed DC Motor Control Reference Design Kit User ’s Manual RDK-BDC-05 Co pyrigh t 2 008– 201 0 Te xas In strumen ts Copyright Copyright © 2008–2010 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.
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RDK-BDC-05
mabuchi rs-555ph-3255
BI802-001A
MDL-BDC
RS-555PH-3255
MABUCHI RS-540SH
Mabuchi
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AD5235
Abstract: Switching Regulator SOT-23-8 AD5273 AD5273BRJ100-R2 AD5273BRJ100-REEL7 AD5273BRJ10-R2 AD5273BRJ10-REEL7 AD5273BRJ1-R2 AD5273BRJ1-REEL7 AD5273BRJ50-R2
Text: 64-Position OTP Digital Potentiometer AD5273 FEATURES 64 Positions OTP One-Time-Programmable 1 Set-and-Forget Resistance Setting 1 k, 10 k, 50 k, 100 k End-to-End Terminal Resistance Compact SOT-23-8 Standard Package Ultralow Power: IDD = 5 A Max
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64-Position
AD5273
OT-23-8
AD5235
Switching Regulator SOT-23-8
AD5273
AD5273BRJ100-R2
AD5273BRJ100-REEL7
AD5273BRJ10-R2
AD5273BRJ10-REEL7
AD5273BRJ1-R2
AD5273BRJ1-REEL7
AD5273BRJ50-R2
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AD5245
Abstract: AD5245BRJ10-R2 AD5245BRJ5-R2 AD5245BRJ5-RL7 AD8610 FDV301N MO-178BA MSOP-10 OP279 FDV301N SOT23
Text: 256-Position I2C Compatible Digital Potentiometer AD5245 FUNCTIONAL BLOCK DIAGRAM FEATURES 256-position End-to-end resistance 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ Compact SOT-23-8 2.9 mm x 3 mm package I2C compatible interface Extra package address decode pin AD0
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256-Position
AD5245
256-position
OT-23-8
C03436
AD5245
AD5245BRJ10-R2
AD5245BRJ5-R2
AD5245BRJ5-RL7
AD8610
FDV301N
MO-178BA
MSOP-10
OP279
FDV301N SOT23
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K38 SOT-23
Abstract: MARKING A78 sot-23 a40 mosfet MARKING SOT-23 b143 SOT23 MARKING A62 a72 sot capacitor E4 2200uF 16V b142 SOT23 marking B57 SOT23 yd 7343
Text: A B C D 4 5. A20M#, INIT, SLP, IGNNE NMI,INTR, STPCLK# and SMI are now pulled up to VCC_CMOS. 6. A20M#, INIT, SLP, IGNNE NMI,INTR, STPCLK# and SMI have series resistors and 680 ohm pullups from 2.7K pullups. 7. Removed Pullup on FERR#. Processor assembly or interposer
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A01-A09
75Ohms.
K38 SOT-23
MARKING A78 sot-23
a40 mosfet
MARKING SOT-23 b143
SOT23 MARKING A62
a72 sot
capacitor E4 2200uF 16V
b142 SOT23
marking B57 SOT23
yd 7343
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3 phase stepper motor schematic TI
Abstract: No abstract text available
Text: Stellaris Stepper Motor Reference Design Kit User ’s Manual RDK-Ste ppe r-0 3 Co pyrigh t 2 007– 200 9 Te xas In strumen ts Copyright Copyright © 2007–2009 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.
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FDV301N
Abstract: No abstract text available
Text: F A IR C H March 1999 IL D SEMICONDUCTOR FDV301N Digital FET, N-Channel General Description Features This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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FDV301N
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FDV301N
Abstract: No abstract text available
Text: F A 'R C H IL D M IC O N D U C T O R PRELIMINARY tm FDV301N N-Channel, Digital FET General Description Features These N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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FDV301N
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FDV301N
Abstract: FET N-CHANNEL
Text: F A IR C H IL D July 1997 MlC O N D U C T O R FDV301N Digital F E T , N-Channel General Description Features This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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FDV301N
FET N-CHANNEL
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301n sot 23
Abstract: FDV301N
Text: July 1997 F A IR C H iL - D SEM IC O N D U C TO R tm FDV301N Digital F E T , N-Channel General Description Features This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high celt density, DMOS technology. This very high density process is
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FDV301N
V301N
301n sot 23
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cfw SOT23
Abstract: p channel mosfet sot-23 fairchild FDV301N SOT23 D FDV302P
Text: F / M R C H May 1997 I I - D M IC O N D U C T D R ADVANCE INFORMATION th FDC6320C Dual N & P Channel , Digital FET General Description Features These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high
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FDC6320C
700us
700us.
cfw SOT23
p channel mosfet sot-23 fairchild
FDV301N SOT23 D
FDV302P
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