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    FDS86141 Price and Stock

    onsemi FDS86141

    MOSFET N-CH 100V 7A 8SOIC
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    DigiKey FDS86141 Digi-Reel 7,320 1
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    Arrow Electronics FDS86141 10,000 1
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    FDS86141 7,500 22 Weeks 2,500
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    FDS86141 Reel 2,500
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    Ameya Holding Limited FDS86141 2,384
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    Richardson RFPD FDS86141 2,500
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    Avnet Asia FDS86141 22 Weeks 2,500
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    Chip1Stop FDS86141 10,000
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    • 10 $1.4346
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    FDS86141 7,500
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    FDS86141 Cut Tape 2,046
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    FDS86141 1,524
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    FDS86141 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDS86141 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 7A 8-SOIC Original PDF

    FDS86141 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDS86141 FDS86141

    Untitled

    Abstract: No abstract text available
    Text: FDS86141 N-Channel PowerTrench MOSFET 100 V, 7 A, 23 m Features General Description  Maximum RDS on = 23 m at VGS = 10 V, ID = 7 A This N-channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDS86141

    FDS86141

    Abstract: No abstract text available
    Text: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDS86141 FDS86141

    FDS86141

    Abstract: No abstract text available
    Text: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDS86141 FDS86141

    FDS86141

    Abstract: SOIC127P600 SOIC127P600X175-8M
    Text: FDS86141 N-Channel PowerTrench MOSFET 100 V, 7 A, 23 m Features General Description  Maximum RDS on = 23 m at VGS = 10 V, ID = 7 A This N-channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDS86141 FDS86141 SOIC127P600 SOIC127P600X175-8M

    wurth 744

    Abstract: ceragon AN5043 SMBJ58A SOT23 mark d23 FDS86141 MAX5900 wap sot23 MOSFET MARK y2 15VD40
    Text: Maxim > Design support > App notes > Basestations/Wireless Infrastructure > APP 5043 Maxim > Design support > App notes > Hot-Swap and Power Switching Circuits > APP 5043 Maxim > Design support > App notes > Power-Supply Circuits > APP 5043 Keywords: powered device, PD, Power over Ethernet, PoE, IEEE 802.3af, IEEE 802.3at, Class 2 PD, Class 3 PD, IP phones, IP


    Original     		PDF com/an5043 AN5043, APP5043, Appnote5043, wurth 744 ceragon AN5043 SMBJ58A SOT23 mark d23 FDS86141 MAX5900 wap sot23 MOSFET MARK y2 15VD40