FDQ4006N
Abstract: SOIC-14
Text: July 1997 ADVANCE INFORMATION FDQ4006N Dual Common Drain N-Channel Enhancement Mode Field Effect Transistor General Description Features SOIC-14 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell
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FDQ4006N
SOIC-14
OT-23
50oC/W
83oC/W
FDQ4006N
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cfw SOT23
Abstract: Q4006
Text: F A IR C H IL D SEM ICONDUCTO R J u ly 1 9 9 7 tm ADVANCE INFORMATION FDQ4006N Dual Common Drain N-Channel Enhancement Mode Field El Transistor General Features Description SOIC-14 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell
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OCR Scan
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PDF
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FDQ4006N
SOIC-14
Q4006N
cfw SOT23
Q4006
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FDQ4006N
Abstract: SOIC-14
Text: FAIRCHILD ìm ic d n d u c t o r July 1997 - ADVANCE INFORMATION FDQ4006N Dual Common Drain N-Channel Enhancement Mode Field Effect Transistor General Features Description SOIC-14 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell
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OCR Scan
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PDF
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FDQ4006N
SOIC-14
FDQ4006N
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D July 1997 SEM ICONDUCTO R ADVANCE INFORMATION tm FDQ4006N Dual Common Drain N-Channel Enhancement Mode Field Effect Transistor General Description Features SOIC-14 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell
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OCR Scan
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PDF
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FDQ4006N
SOIC-14
FDQ4006N
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24WGS
Abstract: No abstract text available
Text: FAIRCHILD ìm ic d n d u c t o r July 1997 - ADVANCE INFORMATION FDQ4006N Dual Common Drain N-Channel Enhancement Mode Field Effect Transistor General Features Description SOIC-14 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell
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OCR Scan
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PDF
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FDQ4006N
SOIC-14
24WGS
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