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    onsemi FDMS8560S

    MOSFET N-CH 25V 30A/70A 8PQFN
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    Fairchild Semiconductor Corporation FDMS8560S

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    Bristol Electronics FDMS8560S 4,166
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    ComSIT USA FDMS8560S 3,000
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    FDMS8560S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDMS8560S Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 30A 8-PQFN Original PDF

    FDMS8560S Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description ̈ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description „ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF FDMS8560S FDMS8560S

    Untitled

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF FDMS8560S FDMS8560S