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    FDMS3600S Search Results

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    FDMS3600S Price and Stock

    onsemi FDMS3600S

    MOSFET 2N-CH 25V 15A/30A 8PQFN
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    DigiKey FDMS3600S Reel 9,000 3,000
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    FDMS3600S Cut Tape 4,185 1
    • 1 $3.16
    • 10 $2.054
    • 100 $1.4233
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    FDMS3600S Reel
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    FDMS3600S Digi-Reel 1
    • 1 $3.16
    • 10 $2.054
    • 100 $1.4233
    • 1000 $1.06629
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    Avnet Americas FDMS3600S Reel 4 Weeks 306
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    FDMS3600S Reel 0 Weeks, 2 Days 705
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    FDMS3600S Reel 3,000
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    Flip Electronics FDMS3600S 12,885
    • 1 $0.71
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    Fairchild Semiconductor Corporation FDMS3600S

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    Quest Components FDMS3600S 710
    • 1 $3.2948
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    Rochester Electronics FDMS3600S 51,778 1
    • 1 $1.19
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    • 100 $1.12
    • 1000 $1.02
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    FDMS3600S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDMS3600S Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 25V 15A 8-PQFN Original PDF

    FDMS3600S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fdms3600

    Abstract: FDMS3600S N9OC
    Text: PowerTrench Power Stage 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3600S FDMS3600S fdms3600 N9OC

    TG11

    Abstract: TG-11
    Text: 5 4 3 VDD33-1 VDD25-1 GND 2 1 REVISION HISTORY INT/EXTVCC-1 ECO R1 2 C2 0.22uF C5 10uF L1 R4 40 C25 10nF Q8 15 RUN1 14 RUN0 23 SC R22 R28 OPT 24 17 R29 10K 18 19 20 VDD33-1 21 VDD33 RUN0 TG1 ASEL BOOST1 WP SW1 SC BG1 ISNS1+ FREQ_CFG ISNS1- VOUT0_CFG VSENSE1


    Original     		PDF VDD33-1 VDD25-1 VDD33 330uF 100nF LTC3880EUJ TG11 TG-11

    fdms3600

    Abstract: No abstract text available
    Text: Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 1.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3600S FDMS3600S fdms3600

    Untitled

    Abstract: No abstract text available
    Text: PowerTrench Power Stage 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original     		PDF