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    FDMS037N08B Search Results

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    FDMS037N08B Price and Stock

    onsemi FDMS037N08B

    MOSFET N-CH 75V 100A 8PQFN
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    DigiKey FDMS037N08B Cut Tape 4,925 1
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    FDMS037N08B Digi-Reel 4,925 1
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    FDMS037N08B Reel 3,000 3,000
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    Avnet Americas FDMS037N08B Reel 13 Weeks 3,000
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    Mouser Electronics FDMS037N08B 2,694
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    FDMS037N08B Reel 3,000
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    Future Electronics FDMS037N08B Reel 34 Weeks 3,000
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    Onlinecomponents.com FDMS037N08B
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    TME FDMS037N08B 1
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    Richardson RFPD FDMS037N08B 3,000
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    Avnet Asia FDMS037N08B 13 Weeks 3,000
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    EBV Elektronik FDMS037N08B 6,000 15 Weeks 3,000
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    New Advantage Corporation FDMS037N08B 6,000 1
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    Wuhan P&S FDMS037N08B 2,620 1
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    onsemi FDMS037N08B-01

    FDMS037N08B - N-Channel PowerTrench MOSFET 75V, 100A
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    Rochester Electronics FDMS037N08B-01 32,893 1
    • 1 $1.25
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    Flip Electronics FDMS037N08B-01 171,000
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    Others FDMS037N08B

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    Chip 1 Exchange FDMS037N08B 3,536
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    FDMS037N08B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMS037N08B Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 100A 8QFN Original PDF

    FDMS037N08B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS037N08B N-Channel PowerTrench MOSFET 75V, 100A, 3.7mΩ Features Description • RDS on = 3.01mΩ (Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet


    Original
    FDMS037N08B FDMS037N08B PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS037N08B N-Channel PowerTrench MOSFET 75 V, 100 A, 3.7 mΩ Features Description • RDS on = 3.01 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    FDMS037N08B PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS037N08B N-Channel PowerTrench MOSFET 75 V, 100 A, 3.7 mΩ Features Description • RDS on = 3.01mΩ (Typ.)@ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    FDMS037N08B FDMS037N08B PDF