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    FDME910PZT Search Results

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    FDME910PZT Price and Stock

    Flip Electronics FDME910PZT

    MOSFET P-CH 20V 8A MICROFET
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    DigiKey FDME910PZT Reel 2,872 2,872
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    onsemi FDME910PZT

    MOSFET P-CH 20V 8A MICROFET
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    DigiKey FDME910PZT Reel
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    Newark FDME910PZT Reel 5,000
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    Rochester Electronics FDME910PZT 1,746 1
    • 1 $0.3144
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    • 100 $0.2955
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    TME FDME910PZT 1
    • 1 $0.78
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    Flip Electronics FDME910PZT 7,245
    • 1 $0.15
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    onsemi FDME910PZT-P

    FDME910PZT - 20V P-Channel PowerTrench MOSFET
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    Rochester Electronics FDME910PZT-P 160,000 1
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    • 1000 $0.2479
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    Flip Electronics FDME910PZT-P 4,373
    • 1 $0.2
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    onsemi FDME910PZT-P-Q

    P-CH. ER TRENCH MOSFET (Alt: FDME910PZT-P-Q)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia FDME910PZT-P-Q 33 Weeks 5,000
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    FDME910PZT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDME910PZT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P CH 20V 8A MICROFET Original PDF

    FDME910PZT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDME910

    Abstract: B175 FDME910PZT
    Text: FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener


    Original
    PDF FDME910PZT FDME910PZT FDME910 B175

    Untitled

    Abstract: No abstract text available
    Text: FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener


    Original
    PDF FDME910PZT

    Untitled

    Abstract: No abstract text available
    Text: Advance Information FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description „ Max rDS on = 24 mΩ at VGS = -4.5 V, ID = -8 A This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.


    Original
    PDF FDME910PZT FDME910PZT

    Untitled

    Abstract: No abstract text available
    Text: FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener


    Original
    PDF FDME910PZT