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    FDMC7680 Price and Stock

    Rochester Electronics LLC FDMC7680

    MOSFET N-CH 30V 14.8A 8MLP
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    DigiKey FDMC7680 Bulk 11,422 454
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    • 1000 $0.66
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    onsemi FDMC7680

    MOSFET N-CH 30V 14.8A 8MLP
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    DigiKey FDMC7680 Cut Tape 5,000 1
    • 1 $1.53
    • 10 $1.249
    • 100 $0.9712
    • 1000 $0.67059
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    FDMC7680 Reel 3,000 3,000
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    FDMC7680 Digi-Reel 1
    • 1 $1.53
    • 10 $1.249
    • 100 $0.9712
    • 1000 $0.67059
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    FDMC7680 Cut Tape 1
    • 1 $1.53
    • 10 $1.249
    • 100 $0.9712
    • 1000 $0.67059
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    FDMC7680 Digi-Reel 1
    • 1 $1.53
    • 10 $1.249
    • 100 $0.9712
    • 1000 $0.67059
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    FDMC7680 Reel 3,000
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    Avnet Americas FDMC7680 Reel 0 Weeks, 2 Days 1,471
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    FDMC7680 Reel 4 Weeks 546
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    FDMC7680 Reel 16 Weeks 3,000
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    Mouser Electronics FDMC7680 2,024
    • 1 $1.53
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    • 100 $0.972
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    Newark FDMC7680 Reel 3,000
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    Future Electronics FDMC7680 Reel 16 Weeks 3,000
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    Onlinecomponents.com FDMC7680
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    Rochester Electronics FDMC7680 9,000 1
    • 1 $0.6678
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    • 100 $0.6277
    • 1000 $0.5676
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    TME FDMC7680 1
    • 1 $1.22
    • 10 $1.1
    • 100 $0.88
    • 1000 $0.81
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    Richardson RFPD FDMC7680 3,000
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    Avnet Asia FDMC7680 16 Weeks 3,000
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    • 10000 $0.58705
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    Avnet Silica FDMC7680 17 Weeks 3,000
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    EBV Elektronik FDMC7680 18 Weeks 3,000
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    Flip Electronics FDMC7680 15,023
    • 1 $0.34
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    Fairchild Semiconductor Corporation FDMC7680

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    Bristol Electronics FDMC7680 2,598
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    Rochester Electronics FDMC7680 11,422 1
    • 1 $0.6678
    • 10 $0.6678
    • 100 $0.6277
    • 1000 $0.5676
    • 10000 $0.5676
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    Component Electronics, Inc FDMC7680 50
    • 1 $0.77
    • 10 $0.77
    • 100 $0.58
    • 1000 $0.5
    • 10000 $0.5
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    FDMC7680 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDMC7680 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8-MLP Original PDF

    FDMC7680 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDMC7680

    Abstract: MO-229 148 FSC
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original
    PDF FDMC7680 FDMC7680 MO-229 148 FSC

    Untitled

    Abstract: No abstract text available
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description „ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original
    PDF FDMC7680 FDMC7680

    FDMC7680

    Abstract: MO-229
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original
    PDF FDMC7680 FDMC7680 MO-229

    Untitled

    Abstract: No abstract text available
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description „ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original
    PDF FDMC7680

    Untitled

    Abstract: No abstract text available
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description „ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original
    PDF FDMC7680

    FDMC7680

    Abstract: MO-229
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original
    PDF FDMC7680 FDMC7680 MO-229

    Untitled

    Abstract: No abstract text available
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description ̈ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original
    PDF FDMC7680