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    FDD86102LZ Search Results

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    FDD86102LZ Price and Stock

    onsemi FDD86102LZ

    MOSFET N-CH 100V 8A/35A DPAK
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    DigiKey FDD86102LZ Cut Tape 7,081 1
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    FDD86102LZ Digi-Reel 7,081 1
    • 1 $2.33
    • 10 $1.496
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    FDD86102LZ Reel 5,000 2,500
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    Avnet Americas FDD86102LZ Reel 17 Weeks 2,500
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    Mouser Electronics FDD86102LZ 13,761
    • 1 $1.5
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    Newark FDD86102LZ Cut Tape 2,993 5
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    FDD86102LZ Reel 2,500
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    Future Electronics FDD86102LZ Reel 9 Weeks 2,500
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    FDD86102LZ Reel 17 Weeks 2,500
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    FDD86102LZ Cut Tape/Mini-Reel 17 Weeks 2,500
    • 1 $0.745
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    • 1000 $0.655
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    Onlinecomponents.com FDD86102LZ 5,000
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    Rochester Electronics FDD86102LZ 208,500 1
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    TME FDD86102LZ 670 1
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    ComSIT USA FDD86102LZ 5,000
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    Richardson RFPD FDD86102LZ 2,500
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    Avnet Asia FDD86102LZ 17 Weeks 2,500
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    Avnet Silica FDD86102LZ 18 Weeks 2,500
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    Chip One Stop FDD86102LZ Cut Tape 2,116
    • 1 $0.653
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    • 100 $0.647
    • 1000 $0.633
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    Chip-Germany GmbH FDD86102LZ 36
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    EBV Elektronik FDD86102LZ 19 Weeks 2,500
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    Master Electronics FDD86102LZ 5,000
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    Fairchild Semiconductor Corporation FDD86102LZ

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    Quest Components FDD86102LZ 6
    • 1 $1.75
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    Win Source Electronics FDD86102LZ 196,486
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    VBsemi Electronics Co Ltd FDD86102LZ

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    Maritex FDD86102LZ 100
    • 1 $1.26
    • 10 $1.26
    • 100 $0.829
    • 1000 $0.717
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    FDD86102LZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD86102LZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8A DPAK Original PDF

    FDD86102LZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDD86102LZ

    Abstract: fdd86102
    Text: N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD


    Original
    O-252 O-252) FDD86102LZ fdd86102 PDF

    FDD86102LZ

    Abstract: FDD86102
    Text: N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD


    Original
    FDD86102LZ FDD86102LZ FDD86102 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 mΩ Features General Description ̈ Max rDS on = 22.5 mΩ at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and


    Original
    PDF