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    FDC654P Price and Stock

    Rochester Electronics LLC FDC654P

    SMALL SIGNAL FIELD-EFFECT TRANSI
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    DigiKey FDC654P Bulk 994,719 1,789
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    onsemi FDC654P

    MOSFET P-CH 30V 3.6A SUPERSOT6
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    DigiKey FDC654P Digi-Reel 6,744 1
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    FDC654P Cut Tape 6,744 1
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    FDC654P Reel 6,000 3,000
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    Mouser Electronics FDC654P 17,181
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    Arrow Electronics FDC654P 3,000 11 Weeks 3,000
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    FDC654P Cut Strips 30 11 Weeks 1
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    Newark FDC654P Reel 3,000
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    FDC654P Cut Tape 5
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    Future Electronics FDC654P Reel 3,000 12 Weeks 3,000
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    Onlinecomponents.com FDC654P
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    Rochester Electronics FDC654P 6,000 1
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    TME FDC654P 1
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    Richardson RFPD FDC654P 6,000
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    Avnet Silica FDC654P 12 Weeks 3,000
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    Chip1Stop FDC654P Cut Tape 3,000
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    EBV Elektronik FDC654P 13 Weeks 3,000
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    New Advantage Corporation FDC654P 12,000 1
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    Aptina Imaging FDC654P

    Trans MOSFET P-CH 30V 3.6A 6-Pin TSOT-23 T/R
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    Verical FDC654P 3,000 3,000
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    Fairchild Semiconductor Corporation FDC654P

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    Bristol Electronics FDC654P 1,307
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    Quest Components FDC654P 809
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    FDC654P 330
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    FDC654P 64
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    Rochester Electronics FDC654P 565,661 1
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    ComSIT USA FDC654P 3,000
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    Velocity Electronics FDC654P 992
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    Component Electronics, Inc FDC654P 2,991
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    Win Source Electronics FDC654P 51,400
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    Others FDC654P

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    ComSIT USA FDC654P 3,000
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    FDC654P Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDC654P Fairchild Semiconductor Single P-Channel Logic Level PowerTrench MOSFET Original PDF
    FDC654P Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC654P Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDC654P Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    FDC654P_NF073 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC654P_NL Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF

    FDC654P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOIC-16

    Abstract: FDC654P
    Text: March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDC654P OT-23 FDC654P SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDC654P OT-23

    FDC654P

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		PDF FDC654P FDC654P

    marking A36A

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		PDF FDC654P marking A36A

    marking 654

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		PDF FDC654P FDC654P marking 654

    FDC654P

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V. RDS ON = 75 mΩ @ V GS = –10 V


    Original     		PDF FDC654P FDC654P

    Untitled

    Abstract: No abstract text available
    Text: TPS40200 www.ti.com SLUS659F – FEBRUARY 2006 – REVISED MARCH 2012 WIDE INPUT RANGE NON-SYNCHRONOUS VOLTAGE MODE CONTROLLER Check for Samples: TPS40200 FEATURES 1 • • • • • • • • • • • • Input Voltage Range 4.5 V to 52 V Output Voltage 700 mV to 90% VIN


    Original     		PDF TPS40200 SLUS659F TPS40200 200-mA

    TPS40200

    Abstract: TPS40200D TPS40200DR TPS40200DRBR TPS40200DRBT transistor 206 tsp40200 700VDD
    Text: TPS40200 www.ti.com . SLUS659D – FEBRUARY 2006 – REVISED NOVEMBER 2008 WIDE INPUT RANGE NON-SYNCHRONOUS VOLTAGE MODE CONTROLLER


    Original     		PDF TPS40200 SLUS659D TPS40200 TPS40200D TPS40200DR TPS40200DRBR TPS40200DRBT transistor 206 tsp40200 700VDD

    Supersot6

    Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN
    Text: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5


    Original     		PDF FDC6401N FDC6305N FDC637AN FDC6303N FDC6301N FDC6561AN FDC645N FDC638P FDC640P FDC642P Supersot6 Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN

    0805-x7r-0,1

    Abstract: FDC654P OP12 Si2305DS Si3441DV Si3443DV Si3455DV TWL2203 TWL2203PFB
    Text: TWL2203 POWER SUPPLY MANAGEMENT IC SLVS185 – FEBRUARY 2000 D D D D D D Li-Ion Battery Charging Control Over-Voltage Shutdown Seven Low-Dropout Low-Noise Linear Voltage Regulators LDO Voltage Detectors (With Power-Off Delay) Four-Channel Analog Multiplexer


    Original     		PDF TWL2203 SLVS185 48-pin 0805-x7r-0,1 FDC654P OP12 Si2305DS Si3441DV Si3443DV Si3455DV TWL2203 TWL2203PFB

    Car Battery 12V pulse charger

    Abstract: 638V max4919 N-FET FDC6561AN
    Text: 19-0614; Rev 0; 8/06 Battery Power-Up Logic with Overvoltage and Overcurrent Protection Features The MAX4919B/MAX4920B/MAX4921B overvoltage protection controllers protect low-voltage systems against high-voltage faults up to +28V. An internal 1.8A min pFET with low RON (100mΩ) switches a battery to


    Original     		PDF MAX4919B/MAX4920B/MAX4921B Car Battery 12V pulse charger 638V max4919 N-FET FDC6561AN

    Untitled

    Abstract: No abstract text available
    Text: TPS40200 www.ti.com SLUS659F – FEBRUARY 2006 – REVISED MARCH 2012 WIDE INPUT RANGE NON-SYNCHRONOUS VOLTAGE MODE CONTROLLER Check for Samples: TPS40200 FEATURES 1 • • • • • • • • • • • • Input Voltage Range 4.5 V to 52 V Output Voltage 700 mV to 90% VIN


    Original     		PDF TPS40200 SLUS659F

    tl5001

    Abstract: No abstract text available
    Text: TPS40200 www.ti.com SLUS659 – FEBRUARY 2006 WIDE INPUT RANGE NON-SYNCHRONOUS VOLTAGE MODE CONTROLLER FEATURES • • • • • • • • • • • • DESCRIPTION Input Voltage Range 4.5 to 52 V Output Voltage 700 mV to 90% Vin 200 mA Internal P-FET Driver


    Original     		PDF TPS40200 SLUS659 TPS40200 200-mA tl5001

    kw MHz transistor module

    Abstract: FDC654P TPS40200 TPS40200D TSP40200
    Text: TPS40200 www.ti.com SLUS659C – FEBRUARY 2006 – REVISED MARCH 2007 WIDE INPUT RANGE NON-SYNCHRONOUS VOLTAGE MODE CONTROLLER FEATURES 1 • • • • • • • • • • • • Input Voltage Range 4.5 to 52 V Output Voltage 700 mV to 90% VIN 200 mA Internal P-Channel FET Driver


    Original     		PDF TPS40200 SLUS659C TPS40200 kw MHz transistor module FDC654P TPS40200D TSP40200

    FSA642

    Abstract: FDMA1024NZ diagram circuit usb mp3 player with radio fm lcd CFL inverter circuit schematic diagram FAN5646 FDC610PZ block diagram 3x3 matrix keypad and microcontroller FDC658AP CFL 12v inverter circuit schematic diagram free pwm DC-DC SC70-5
    Text: PORTABLE SOLUTIONS w w w. f a i r c h i l d s e m i . c o m INTRODUCTION Fairchild Semiconductor provides complete portable design solutions to assist in your design challenges and accelerate time to market in the ever fast moving design cycle. We offer a large portfolio of leading-edge products


    Original     		PDF

    cs 740 mosfet

    Abstract: si5504 Dual N-MOSFET sot23 40-AAE MAX4864LELT MAX4864LEUT-T MAX4865LEUT-T Dual N-MOSFET 30V 1A charge pump 5V udfn
    Text: 19-3582; Rev 2; 5/10 Overvoltage Protection Controllers with Reverse Polarity Protection The MAX4864L/MAX4865L/MAX4866L/MAX4867 overvoltage protection controllers protect low-voltage systems against high-voltage faults up to +28V, and negative voltages down to -28V. These devices drive a


    Original     		PDF MAX4864L/MAX4865L/MAX4866L/MAX4867 MAX4864L/MAX4865L/MAX4866L/MAX4867 cs 740 mosfet si5504 Dual N-MOSFET sot23 40-AAE MAX4864LELT MAX4864LEUT-T MAX4865LEUT-T Dual N-MOSFET 30V 1A charge pump 5V udfn

    TSP40200

    Abstract: No abstract text available
    Text: TPS40200 www.ti.com SLUS659C – FEBRUARY 2006 – REVISED MARCH 2007 WIDE INPUT RANGE NON-SYNCHRONOUS VOLTAGE MODE CONTROLLER FEATURES 1 • • • • • • • • • • • • Input Voltage Range 4.5 to 52 V Output Voltage 700 mV to 90% VIN 200 mA Internal P-Channel FET Driver


    Original     		PDF TPS40200 SLUS659C TPS40200 200-mA TSP40200

    Untitled

    Abstract: No abstract text available
    Text: TPS40200 www.ti.com SLUS659A – FEBRUARY 2006 – REVISED SEPTEMBER 2006 WIDE INPUT RANGE NON-SYNCHRONOUS VOLTAGE MODE CONTROLLER FEATURES • • • • • • • • • • • • DESCRIPTION Input Voltage Range 4.5 to 52 V Output Voltage 700 mV to 90% Vin


    Original     		PDF TPS40200 SLUS659A TPS40200 200-mA

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    Untitled

    Abstract: No abstract text available
    Text: 19-3582; Rev 2; 5/10 Overvoltage Protection Controllers with Reverse Polarity Protection The MAX4864L/MAX4865L/MAX4866L/MAX4867 overvoltage protection controllers protect low-voltage systems against high-voltage faults up to +28V, and negative voltages down to -28V. These devices drive a


    Original     		PDF MAX4864L/MAX4865L/MAX4866L/MAX4867 MAX4864L/MAX4865L/MAX4866L/MAX4867

    Untitled

    Abstract: No abstract text available
    Text: TPS40200-EP www.ti.com SGLS371A – JANUARY 2007 – REVISED JANUARY 2013 WIDE-INPUT-RANGE NONSYNCHRONOUS VOLTAGE-MODE CONTROLLER Check for Samples: TPS40200-EP FEATURES 1 • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication


    Original     		PDF TPS40200-EP SGLS371A 200-mA

    Untitled

    Abstract: No abstract text available
    Text: R A I R C H I I - D March 1998 M ICDNDUCTO R ^ FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		PDF FDC654P FDC654P

    Untitled

    Abstract: No abstract text available
    Text: PAIRCHII-D March 1998 M ICDNDUCTQ R ! FDC654P P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		PDF FDC654P

    FDC654P

    Abstract: SOIC-16
    Text: FAIRCHILD M a rch 1 9 9 8 MICDNDUCTDR- FDC654P P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		PDF FDC654P FDC654P SOIC-16