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onsemi FDC633N MOSFET N-CH 30V 5.2A SUPERSOT6
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DigiKey	FDC633N	Digi-Reel			1	1 $1.58 10 $1.58 100 $1.58 1000 $1.58 10000 $1.58	Buy Now
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Quest Components	FDC633N		636			1 $2.752 10 $2.752 100 $2.752 1000 $1.1352 10000 $1.1352	Buy Now
Rochester Electronics LLC FDC633N MOSFET N-CH 30V 5.2A SUPERSOT6
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onsemi FDC633N_F095 MOSFET N-CH 30V 5.2A SUPERSOT6
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DigiKey	FDC633N_F095	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Fairchild Semiconductor Corporation FDC633N
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Bristol Electronics	FDC633N		2,050		4	1 - 10 $1.5 100 $0.5625 1000 $0.39 10000 $0.39	Buy Now
Quest Components	FDC633N		2,313			1 $1.7325 10 $1.7325 100 $1.7325 1000 $0.4505 10000 $0.4331	Buy Now
	FDC633N		2,192			1 $2.261 10 $2.261 100 $2.261 1000 $0.7914 10000 $0.6783	Buy Now
	FDC633N		1,640			1 $2 10 $2 100 $2 1000 $0.52 10000 $0.5	Buy Now
	FDC633N		1,517			1 $1.2513 10 $1.2513 100 $1.2513 1000 $0.5756 10000 $0.5756	Buy Now
	FDC633N		1,044			1 $1.28 10 $1.28 100 $0.64 1000 $0.512 10000 $0.512	Buy Now
	FDC633N		273			1 $2.002 10 $2.002 100 $1.1011 1000 $1.001 10000 $1.001	Buy Now
	FDC633N		33			1 $2.002 10 $1.5015 100 $1.2513 1000 $1.2513 10000 $1.2513	Buy Now
ComSIT USA	FDC633N		10,323			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	FDC633N		249,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	FDC633N		249,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
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FDC633N Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
FDC633N	Fairchild Semiconductor	N-Channel Enhancement Mode Field Effect Transistor	Original	PDF
FDC633N	Fairchild Semiconductor	N-Channel Enhancement Mode Field Effect Transistor	Original	PDF
FDC633N	Fairchild Semiconductor	N-Channel Enhancement Mode Field Effect Transistor	Original	PDF
FDC633N	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
FDC633N	Fairchild Semiconductor	N-Channel Enhancement Mode Field Effect Transistor	Scan	PDF
FDC633N_F095	Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 5.2A 6-SSOT	Original	PDF
FDC633N_NF073	Fairchild Semiconductor	30V N-Channel Enhancement Mode Field Effect Transistor	Original	PDF
FDC633N_NL	Fairchild Semiconductor	30V N-Channel Enhancement Mode Field Effect Transistor	Original	PDF

FDC633N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FDC633N marking convention Abstract: No abstract text available Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	FDC633N NF073 FDC633N marking convention	PDF
FDC633N Abstract: SOIC-16 Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	FDC633N OT-23 FDC633N SOIC-16	PDF
FDC633N Abstract: SOIC-16 Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	FDC633N OT-23 FDC633N SOIC-16	PDF
Q3 TRANSISTOR Abstract: FDC633N 4TPE150MI X7R TDK MMBT3904 MAX1954 RLF7030-6R8M2R8 C0603C104M8RAC C0603C681M8RAC Text: XENPAK APS power: 5V in 0.9V to 1.8V/0.2A to 1.8A out Schematic Vin 4.5V to 5.5V 0.22uF C1 C2 10uF IN D1 HSD BST Q1 FDC633N DH 0.1uF R1 680pF 130k 0.9V-1.8V/ 0.2A-1.8A 6.8uH APS Power LX Q2 COMP MAX1954 C6 DL To 5Vin 150uF C4 18mOhm FDC633N GND CL Load C5	Original	FDC633N 680pF MAX1954 150uF 18mOhm MMBT3904 C0603C180M3GAC RLF7030-6R8M2R8 Q3 TRANSISTOR FDC633N 4TPE150MI X7R TDK MMBT3904 MAX1954 RLF7030-6R8M2R8 C0603C104M8RAC C0603C681M8RAC	PDF
FDC633N Abstract: SOIC-16 Text: October 1997 PRELIMINARY FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	FDC633N OT-23 FDC633N SOIC-16	PDF
Untitled Abstract: No abstract text available Text: FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate	Original	FDC6327C	PDF
Untitled Abstract: No abstract text available Text: FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.3 A, 60 V. RDS ON = 0.055 W	Original	FDC5612	PDF
SSOT-6 Abstract: CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527 Text: FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage	Original	FDC602P SSOT-6 CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527	PDF
P-Channel MOSFET code L1A S Abstract: CBVK741B019 F63TNR FDC6324L FDC633N SOIC-16 in20v Text: March 1999 FDC6324L Integrated Load Switch General Description Features These Integrated Load Switches are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state	Original	FDC6324L P-Channel MOSFET code L1A S CBVK741B019 F63TNR FDC6324L FDC633N SOIC-16 in20v	PDF
CBVK741B019 Abstract: F63TNR FDG6302P FFB3906 FMB3906 MMPQ3906 SC70-6 SOIC-16 4977 gm Text: E2 MMPQ3906 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.	Original	MMPQ3906 SC70-6 SOIC-16 FFB3906 FMB3906 FMB3906 FFB3906 CBVK741B019 F63TNR FDG6302P MMPQ3906 SC70-6 SOIC-16 4977 gm	PDF
FDC6331L Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where	Original	FDC6331L FDC6331L SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR	PDF
Supersot6 Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN Text: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5	Original	FDC6401N FDC6305N FDC637AN FDC6303N FDC6301N FDC6561AN FDC645N FDC638P FDC640P FDC642P Supersot6 Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN	PDF
SC70-6 SSOT6 Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and	Original	SC70-6 FFB2227A FMB2227A FFB2227A FFB2222A FFB2907A SC70-6 SSOT6 SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2907A	PDF
CBVK741B019 Abstract: F63TNR FDC3512 FDC633N Text: FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for	Original	FDC3512 CBVK741B019 F63TNR FDC3512 FDC633N	PDF

Untitled Abstract: No abstract text available Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.	Original	Si3455DV	PDF
Untitled Abstract: No abstract text available Text: FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for	Original	FDC3512	PDF
9n90c Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W	Original	2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS	PDF
Untitled Abstract: No abstract text available Text: 19-5250; Rev 1; 9/10 KIT ATION EVALU E L B AVAILA 12-Channel/8-Channel EEPROM-Programmable System Managers with Nonvolatile Fault Registers The MAX16047A/MAX16049A EEPROM-configurable system managers monitor, sequence, and track multiple system voltages. The MAX16047A manages up to twelve	Original	12-Channel/8-Channel MAX16047A/MAX16049A MAX16047A MAX16049A MAX16047A/MAX16049A	PDF
FDC637AN Abstract: marking CODE 62A general SSOT-6 CBVK741B019 F63TNR FDC633N SI3446DV Text: FDC637AN April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored	Original	FDC637AN SI3446DV FDC637AN marking CODE 62A general SSOT-6 CBVK741B019 F63TNR FDC633N SI3446DV	PDF
CBVK741B019 Abstract: F63TNR FDC633N FDC638P SOIC-16 Text: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance	Original	FDC638P OT-23 CBVK741B019 F63TNR FDC633N FDC638P SOIC-16	PDF
scw 52 transistor Abstract: No abstract text available Text: F /\IR G H II_ D March 1998 M IC O N D U C T O R tm FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell	OCR Scan	FDC633N scw 52 transistor	PDF
FDC633N Abstract: SOIC-16 Text: FAIRCHILD ìm ic d n d u c t o M arch 1998 - r FDC633N N-Channel Enhancement Mode Field Effect Transistor Features General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	OCR Scan	FDC633N OT-23 FDC633N SOIC-16	PDF
Untitled Abstract: No abstract text available Text: F A I R C H I L D M arch 1998 S E M IC O N D U C T O R tm FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell	OCR Scan	FDC633N FDC633N	PDF
Untitled Abstract: No abstract text available Text: June 1997 FAIRCHILD M IC O N D U C T O R m FDC633N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,	OCR Scan	FDC633N	PDF

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onsemi FDC633N

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onsemi FDC633N_F095

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FDC633N Datasheets (8)

FDC633N Datasheets Context Search

FDC633N marking convention

FDC633N

FDC633N

Q3 TRANSISTOR

FDC633N

Untitled

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SSOT-6

P-Channel MOSFET code L1A S

CBVK741B019

FDC6331L

Supersot6

SC70-6 SSOT6

CBVK741B019

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9n90c

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FDC637AN

CBVK741B019

scw 52 transistor

FDC633N

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