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    FDB FAIRCHILD Search Results

    FDB FAIRCHILD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54ABT245/BRA Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801QRA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    74F403SPC Rochester Electronics LLC Replacement for Fairchild part number 74F403SPC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54F38/QCA Rochester Electronics LLC Replacement for Fairchild part number 54F38/BCA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    93425ADM/B Rochester Electronics LLC Replacement for Fairchild part number 93425ADMQB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54ABT245/B2A Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801Q2A. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    FDB FAIRCHILD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN9757

    Abstract: No abstract text available
    Text: 2012 FDB9403_F085 N-Channel Power Trench MOSFET 40V, 110A, 1.2mΩ D D Features „ Typ rDS on = 1mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 164nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263AB FDB SERIES


    Original     		PDF FDB9403 164nC O-263AB AN9757

    FDB9403

    Abstract: No abstract text available
    Text: 2012 FDB9403_F085 N-Channel Power Trench MOSFET 40V, 110A, 1.2mΩ D D Features „ Typ rDS on = 1mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 164nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263AB FDB SERIES


    Original     		PDF FDB9403 164nC O-263AB

    Untitled

    Abstract: No abstract text available
    Text: FDB075N15A_F085 N-Channel Power Trench MOSFET 150V, 110A, 7.5mΩ D D Features „ Typ rDS on = 5.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263 FDB SERIES Applications


    Original     		PDF FDB075N15A O-263

    Untitled

    Abstract: No abstract text available
    Text: FDB86360_F085 N-Channel Power Trench MOSFET D D 80V, 110A, 1.8mΩ Features „ Typ rDS on = 1.5mΩ at VGS = 10V, ID = 80A G „ Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A „ UIS Capability G „ RoHS Compliant TO-263 FDB SERIES „ Qualified to AEC Q101 Applications


    Original     		PDF FDB86360 207nC O-263

    Untitled

    Abstract: No abstract text available
    Text: FDB9406_F085 N-Channel PowerTrench MOSFET 40 V, 110 A, 1.8 mΩ D D Features „ Typ RDS on = 1.31mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263 FDB SERIES Applications


    Original     		PDF FDB9406 107nC O-263

    mosfet 600V 20A

    Abstract: Mosfet 600V, 20A
    Text: FCB20N60F_F085 600V N-Channe MOSFET D D 600V, 20A, 190mΩ Features G „ Typ rDS on = 171mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G „ UIS Capability TO-263AB FDB SERIES S „ RoHS Compliant „ Qualified to AEC Q101 S For current package drawing, please refer to the Fairchild


    Original     		PDF FCB20N60F O-263AB mosfet 600V 20A Mosfet 600V, 20A

    Untitled

    Abstract: No abstract text available
    Text: FDB86363_F085 N-Channel PowerTrench MOSFET D D 80 V, 110 A, 2.4 mΩ Features „ Typical RDS on = 2.0 mΩ at VGS = 10V, ID = 80 A G „ Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A „ UIS Capability G „ RoHS Compliant TO-263 FDB SERIES „ Qualified to AEC Q101


    Original     		PDF FDB86363 O-263

    14N30

    Abstract: fdb fairchild 200a 300v mosfet MOSFET 300V FDB SERIES APPLICATION NOTES
    Text: UniFET FDB14N30 TM 300V N-Channel MOSFET Features Description • 14A, 300V, RDS on = 0.29Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18 nC)


    Original     		PDF FDB14N30 FDB14N30 FDB14N30TM 14N30 fdb fairchild 200a 300v mosfet MOSFET 300V FDB SERIES APPLICATION NOTES

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    7030BL

    Abstract: 300 Volt mosfet schematic circuit 1205S 1N4148 LL42 SC1205 SC1205CS high speed mosfet driver Class-D DOUBLE FET
    Text: SC1205 High Speed Synchronous Power MOSFET Driver POWER MANAGEMENT Description Features K Fast rise and fall times 15ns typical with 3000pf The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power MOSFETs. Each driver is capable of driving a 3000pF load in 20ns


    Original     		PDF SC1205 3000pf SC1205 3000pF 7030BL 300 Volt mosfet schematic circuit 1205S 1N4148 LL42 SC1205CS high speed mosfet driver Class-D DOUBLE FET

    7030BL

    Abstract: fb 4710 1205S 1N4148 LL42 SC1205 SC1205CS
    Text: SC1205 High Speed Synchronous Power MOSFET Driver POWER MANAGEMENT Description Features K Fast rise and fall times 15ns typical with 3000pf The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power MOSFETs. Each driver is capable of driving a 3000pF load in 20ns


    Original     		PDF SC1205 3000pf SC1205 3000pF 7030BL fb 4710 1205S 1N4148 LL42 SC1205CS

    93c66

    Abstract: 68HC11 80
    Text: Fairchild Application Note 1012 SPI Versus MICROWIRE™ EEPROM Comparison FAIRCHILD SEMICONDUCTOR TM 5V INTRODUCTION The SPI Serial Peripheral Interface provides a simple eight bit serial port useful in communicating with external devices. Prior to the SPI EEPROMs introduction, engineers used the standard


    OCR Scan     		PDF NM93C66 68HC11. 93c66 68HC11 80

    Untitled

    Abstract: No abstract text available
    Text: April 1998 RAIRCHII-D M ICDNDUCTO R ^ FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    OCR Scan     		PDF FDP6035L/FDB6035L FDP6035L

    Untitled

    Abstract: No abstract text available
    Text: April 1998 FAIRCHILD MlC O N D U C T O R FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF FDP603AL FDB603AL FDPG03AL

    Untitled

    Abstract: No abstract text available
    Text: April 1998 RAIRCHII-D M ICDNDUCTO R tm FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF FDP603AL FDB603AL

    Untitled

    Abstract: No abstract text available
    Text: March 1998 RAIRCHII-D M ICDNDUCTO R tm FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan     		PDF FDP4030L FDB4030L

    Untitled

    Abstract: No abstract text available
    Text: RAIRCHII-D M ICDNDUCTO R January 1996 tm NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF NDP603AL NDB603AL

    d60n

    Abstract: No abstract text available
    Text: F A IR C H IL D S E M IC O N D U C T O R April 1998 m FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF FDP7030L FDB7030L d60n

    DP6035L

    Abstract: FDP6035L FDB6035L
    Text: FAIRCHILD S E M IC O N D U C T O R Apnl 1998 tm F DP6035L/FD B6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF P6035L/FD B6035L FDP6035L DP6035L FDB6035L

    FDB6035AL

    Abstract: FDP6035AL
    Text: July 1998 FAIRCHILD MICDNDUCTDR- FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrench MOSFET Features General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional


    OCR Scan     		PDF FDP6035AL/FDB6035AL FDP6035AL FDB6035AL

    fdb fairchild

    Abstract: FDB6030L FDP6030L
    Text: FAIRCHILD S E M IC O N D U C T O R Apnl 1998 tm FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF FDP6030L FDB6030L NDP6030L/NDB6030L. fdb fairchild FDB6030L

    Untitled

    Abstract: No abstract text available
    Text: F A IR C H IL D S E M IC O N D U C T O R March 1998 m FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T h ese N -C hannel en hance m en t m ode 1 po w e r field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan     		PDF FDP4030L FDB4030L

    B7030

    Abstract: FDP7030BL B7030BL DB7030BL FDB7030BL B703 zener diode reverse breakdown voltage 4.5V
    Text: FAIRCHILD s e m ic o n d u c t o r J u ly 1 9 9 8 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench™ MOSFET G eneral D escription Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC


    OCR Scan     		PDF P7030B B7030B FDP7030BL B7030 B7030BL DB7030BL FDB7030BL B703 zener diode reverse breakdown voltage 4.5V

    fdb fairchild

    Abstract: Z2150 fdb7030l FDP7030L
    Text: | |_ | | N ovem ber 1997 S E M IC O N D U C T O R m FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T h ese N -C hannel logic level en hance m en t m ode pow er field effe ct transistors are produce d using Fairchild's proprietary,


    OCR Scan     		PDF FDP7030L FDB7030L fdb fairchild Z2150