AN9757
Abstract: No abstract text available
Text: 2012 FDB9403_F085 N-Channel Power Trench MOSFET 40V, 110A, 1.2mΩ D D Features Typ rDS on = 1mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 164nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant G Qualified to AEC Q101 TO-263AB FDB SERIES
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FDB9403
164nC
O-263AB
AN9757
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FDB9403
Abstract: No abstract text available
Text: 2012 FDB9403_F085 N-Channel Power Trench MOSFET 40V, 110A, 1.2mΩ D D Features Typ rDS on = 1mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 164nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant G Qualified to AEC Q101 TO-263AB FDB SERIES
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FDB9403
164nC
O-263AB
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Untitled
Abstract: No abstract text available
Text: FDB075N15A_F085 N-Channel Power Trench MOSFET 150V, 110A, 7.5mΩ D D Features Typ rDS on = 5.5mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant G Qualified to AEC Q101 TO-263 FDB SERIES Applications
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FDB075N15A
O-263
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Untitled
Abstract: No abstract text available
Text: FDB86360_F085 N-Channel Power Trench MOSFET D D 80V, 110A, 1.8mΩ Features Typ rDS on = 1.5mΩ at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A UIS Capability G RoHS Compliant TO-263 FDB SERIES Qualified to AEC Q101 Applications
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FDB86360
207nC
O-263
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Untitled
Abstract: No abstract text available
Text: FDB9406_F085 N-Channel PowerTrench MOSFET 40 V, 110 A, 1.8 mΩ D D Features Typ RDS on = 1.31mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant G Qualified to AEC Q101 TO-263 FDB SERIES Applications
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FDB9406
107nC
O-263
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mosfet 600V 20A
Abstract: Mosfet 600V, 20A
Text: FCB20N60F_F085 600V N-Channe MOSFET D D 600V, 20A, 190mΩ Features G Typ rDS on = 171mΩ at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G UIS Capability TO-263AB FDB SERIES S RoHS Compliant Qualified to AEC Q101 S For current package drawing, please refer to the Fairchild
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FCB20N60F
O-263AB
mosfet 600V 20A
Mosfet 600V, 20A
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Untitled
Abstract: No abstract text available
Text: FDB86363_F085 N-Channel PowerTrench MOSFET D D 80 V, 110 A, 2.4 mΩ Features Typical RDS on = 2.0 mΩ at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability G RoHS Compliant TO-263 FDB SERIES Qualified to AEC Q101
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FDB86363
O-263
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14N30
Abstract: fdb fairchild 200a 300v mosfet MOSFET 300V FDB SERIES APPLICATION NOTES
Text: UniFET FDB14N30 TM 300V N-Channel MOSFET Features Description • 14A, 300V, RDS on = 0.29Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18 nC)
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FDB14N30
FDB14N30
FDB14N30TM
14N30
fdb fairchild
200a 300v mosfet
MOSFET 300V
FDB SERIES APPLICATION NOTES
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93c66
Abstract: 68HC11 80
Text: Fairchild Application Note 1012 SPI Versus MICROWIRE™ EEPROM Comparison FAIRCHILD SEMICONDUCTOR TM 5V INTRODUCTION The SPI Serial Peripheral Interface provides a simple eight bit serial port useful in communicating with external devices. Prior to the SPI EEPROMs introduction, engineers used the standard
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NM93C66
68HC11.
93c66
68HC11 80
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Untitled
Abstract: No abstract text available
Text: April 1998 RAIRCHII-D M ICDNDUCTO R ^ FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very
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FDP6035L/FDB6035L
FDP6035L
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ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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F-91742
ss8050 d 331
tip122 tip127 mosfet audio amp
KSD180
KA1M0880 application note
SS8550 D 331
dual cc BAW62
KA2S0680
ss8550 sot-23
MPSA92(KSP92) equivalent
DIODE 1N4148 LL-34
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Untitled
Abstract: No abstract text available
Text: April 1998 FAIRCHILD MlC O N D U C T O R FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,
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FDP603AL
FDB603AL
FDPG03AL
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26AVG
Abstract: LD26
Text: April 1998 PAIRCHII-D M ICDNDUCTQ R tm FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's
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FDP6030L
FDB6030L
NDP6030L/NDB6030L.
P6030L
26AVG
LD26
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PDF
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Untitled
Abstract: No abstract text available
Text: April 1998 RAIRCHII-D M ICDNDUCTO R tm FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,
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FDP603AL
FDB603AL
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7030BL
Abstract: fb 4710 1205S 1N4148 LL42 SC1205 SC1205CS
Text: SC1205 High Speed Synchronous Power MOSFET Driver POWER MANAGEMENT Description Features K Fast rise and fall times 15ns typical with 3000pf The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power MOSFETs. Each driver is capable of driving a 3000pF load in 20ns
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SC1205
3000pf
SC1205
3000pF
7030BL
fb 4710
1205S
1N4148
LL42
SC1205CS
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Untitled
Abstract: No abstract text available
Text: March 1998 RAIRCHII-D M ICDNDUCTO R tm FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high
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FDP4030L
FDB4030L
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Untitled
Abstract: No abstract text available
Text: RAIRCHII-D M ICDNDUCTO R January 1996 tm NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's
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NDP603AL
NDB603AL
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d60n
Abstract: No abstract text available
Text: F A IR C H IL D S E M IC O N D U C T O R April 1998 m FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,
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FDP7030L
FDB7030L
d60n
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DP6035L
Abstract: FDP6035L FDB6035L
Text: FAIRCHILD S E M IC O N D U C T O R Apnl 1998 tm F DP6035L/FD B6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's
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P6035L/FD
B6035L
FDP6035L
DP6035L
FDB6035L
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FDB6035AL
Abstract: FDP6035AL
Text: July 1998 FAIRCHILD MICDNDUCTDR- FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrench MOSFET Features General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
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FDP6035AL/FDB6035AL
FDP6035AL
FDB6035AL
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fdb fairchild
Abstract: FDB6030L FDP6030L
Text: FAIRCHILD S E M IC O N D U C T O R Apnl 1998 tm FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's
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FDP6030L
FDB6030L
NDP6030L/NDB6030L.
fdb fairchild
FDB6030L
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D S E M IC O N D U C T O R March 1998 m FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T h ese N -C hannel en hance m en t m ode 1 po w e r field effect transistors are produced using Fairchild's proprietary, high
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FDP4030L
FDB4030L
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B7030
Abstract: FDP7030BL B7030BL DB7030BL FDB7030BL B703 zener diode reverse breakdown voltage 4.5V
Text: FAIRCHILD s e m ic o n d u c t o r J u ly 1 9 9 8 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench™ MOSFET G eneral D escription Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC
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P7030B
B7030B
FDP7030BL
B7030
B7030BL
DB7030BL
FDB7030BL
B703
zener diode reverse breakdown voltage 4.5V
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fdb fairchild
Abstract: Z2150 fdb7030l FDP7030L
Text: | |_ | | N ovem ber 1997 S E M IC O N D U C T O R m FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T h ese N -C hannel logic level en hance m en t m ode pow er field effe ct transistors are produce d using Fairchild's proprietary,
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FDP7030L
FDB7030L
fdb fairchild
Z2150
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