IR2103 bldc driver
Abstract: 60NF60 e bike motor controller Electric Bike microcontroller ARM circuit active brake mosfet switch BLDC Motor 75N75 TE 555-1 HT45B0C ADC 7815
Text: Driving a BLDC Motor Using the HT45FM03B – C Language Driving a BLDC Motor Using the HT45FM03B – C Language D/N：HA0230E Introduction Brushless DC motors, which are controlled using electric commutation and PWM modulation, have the advantages of greater motor life by overcoming the problems associated with DC
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HT45FM03B
D/NHA0230E
HT45FM03B
IR2103 bldc driver
60NF60
e bike motor controller
Electric Bike microcontroller
ARM circuit
active brake mosfet switch BLDC Motor
75N75
TE 555-1
HT45B0C
ADC 7815
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IR2103 bldc driver
Abstract: electric bike motor assembly language program for speed control e bike motor controller IC2 7805 active brake mosfet switch BLDC Motor HT45B0C assembly language program for speed control of dc brushless bike brushless dc motor speed control bike
Text: Driving a BLDC Motor using the HT45FM03B Assembly Language Driving a BLDC Motor using the HT45FM03B (Assembly Language) D/N：HA0229E Introduction Brushless DC motors, in using electric commutation and PWM drive methods, greatly extend the life of electric motors, by overcoming problems derived from DC motor mechanical
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HT45FM03B
D/NHA0229E
HT45FM03B
IR2103 bldc driver
electric bike motor
assembly language program for speed control
e bike motor controller
IC2 7805
active brake mosfet switch BLDC Motor
HT45B0C
assembly language program for speed control of dc
brushless bike
brushless dc motor speed control bike
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thyristor tag 8422
Abstract: ditty EPC-31 gpr 163 MIPS R4000 mmi2 thyristor handbook transistor mfsa 42 C790 D-10
Text: TX System RISC TX79 Core Architecture Symmetric 2-way superscalar 64-bit CPU Rev. 2.0 The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
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64-bit
thyristor tag 8422
ditty
EPC-31
gpr 163
MIPS R4000
mmi2
thyristor handbook
transistor mfsa 42
C790
D-10
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transistor f613
Abstract: transistor bc 567
Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.
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AO4604
AO4604
AO4604L
-AO4604L
16789ABA2CDE9AFDC
transistor f613
transistor bc 567
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UPD 552 C
Abstract: LC1 D12 P7 XC2000 XC3000 XC4000 XC5200 XC5202 XC5204 XC5206 XC5210
Text: XC5200 Field Programmable Gate Arrays June 1, 1996 Version 4.0 Preliminary Product Specification Features • Fully supported by XACTstep Development System - Includes complete support for XACT-Performance™, X-BLOX™, Unified Libraries, Relationally Placed
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XC5200
PQ100
VQ100
XC5202
XC5204
XC5206
XC5210
XC5215
TQ144
PG156
UPD 552 C
LC1 D12 P7
XC2000
XC3000
XC4000
XC5200
XC5202
XC5204
XC5206
XC5210
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LC1 D12 P7
Abstract: XC2000 XC3000 XC4000 XC5200 XC5202 XC5204 XC5206 XC5210 XC5215
Text: XC5200 Field Programmable Gate Arrays August 6, 1996 Version 4.01 Preliminary Product Specification Features • Fully supported by XACTstep Development System - Includes complete support for XACT-Performance™, X-BLOX™, Unified Libraries, Relationally Placed
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XC5200
PQ100
VQ100
XC5202
XC5204
XC5206
XC5210
XC5215
TQ144
PG156
LC1 D12 P7
XC2000
XC3000
XC4000
XC5200
XC5202
XC5204
XC5206
XC5210
XC5215
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D287A
Abstract: SH120 Ga 81 SR118
Text: HD66300T Horizontal Driver for TFT-Type LCD Color TV Description Features The HD66300T is a horizontal driver used for TFT-type (Thin Film Transistor) LCD color TVs. Specifically, it drives the drain bus signals of a TFT-type LCD panel. • LCD drive outputs: 120
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HD66300T
HD66300T
D287A
SH120
Ga 81
SR118
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hd61105
Abstract: no2rg SR119 msf1 D113 D114 D115 D116 D117 D118
Text: HD66300T Horizontal Driver for TFT-Type LCD Color TV Description The HD66300T is a horizontal driver used for TFT-type (Thin Film Transistor) LCD color TVs. Specifically, it drives the drain bus signals of a TFT-type LCD panel. The HD66300T receives as input three video signals R, G, B, and their inverted signals 5, * and %.
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HD66300T
HD66300T
hd61105
no2rg
SR119
msf1
D113
D114
D115
D116
D117
D118
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irf 560
Abstract: Diode LT 58A 9410A
Text: FAIRCHILD March 1997 M lC O N D U C T O R FDR9410A N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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FDR9410A
irf 560
Diode LT 58A
9410A
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1RFD110
Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
Text: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*
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IRFD110/111/112/113
IRFD110R/111R/112R/113R
IRFD110,
IRFD111,
IRFD112,
IRFD113
IRFD110R,
IRFD111R,
IRFD112R,
IRFD113R
1RFD110
FD110
FD-111 diode
of IRFD 110
IRFD 110
HARRIS IRFD110
irfd11
IRFD111
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IRFD110
Abstract: IRFD113 IRF0110 c 3209 IRFD111 IRFD112
Text: - Standard Power MOSFETs File Number IRFD110, IRFD111, IRFD112, IRFD113 2314 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors
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IRFD110,
IRFD111,
IRFD112,
IRFD113
IRFD113
IRFD110
IRF0110
c 3209
IRFD111
IRFD112
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Untitled
Abstract: No abstract text available
Text: • 43 022 71 O O S M CH O 77T ■ H A R R I HAS S I R F D 1 1 0 / 1 1 1 / 1 1 2 / 1 1 3 I R F D 1 1 0 R / 1 1 1 R / 1 1 2 R / 1 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features 4-PJN DIP • 1A and 0.8 A , 8 0 V - 100V
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IRFD110,
IRFD111,
IRFD112,
IRFD113
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acrian RF POWER TRANSISTOR
Abstract: I3003 25CC TPR175 TPR400 TPR400-2 transistor DF 50 we400 Scans-00115664
Text: 0182998 ACRIAN n ^ a ISJm’I r ; ^ y GENERAL T7 INC j ^ « q BMC rj^ |j |!|gM tw g ; T P R 4 0 0 400 WATTS • 50 VOLTS 1030/1090 MHz DESCRIPTION The TPR400 is a silicon NPN common base RF power transistor designed specifically for pulsed operation as a transponder/interrogator amplifier in the 1030 to
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TPR400
Pw-10
TPR400
Vcc-50
DD01D71
T-33-15
TPR400-3
06-6pf
acrian RF POWER TRANSISTOR
I3003
25CC
TPR175
TPR400-2
transistor DF 50
we400
Scans-00115664
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jd 1803
Abstract: otc114 E2p 93 transistor 2SD1834 B14A DTC143YKA DTC143ZKA transistor marking w9 2SA1690 UMW10
Text: The Class and Basic Ordering Units for Standard and Semi-standard Products T o m a k e it e a sier for th e cu sto m er to s e le c t th e ty p e o f product b est suited to specific applications, we offer transistors in three types. : an d 1 sta n d a rd ,
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2SA1774
2SA1821
2SA1885
2SC4617
2SC4618
2SC4619
2SC4649
2SC4725
2SC4726
2SC4997
jd 1803
otc114
E2p 93 transistor
2SD1834
B14A
DTC143YKA
DTC143ZKA
transistor marking w9
2SA1690
UMW10
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Untitled
Abstract: No abstract text available
Text: D EVELO PM EN T DATA PCD3360 T h is data sheet co n ta in s advance in fo rm a tio n and sp e cificatio n s are su b ject to change w ith o u t n otice. - A _ PROGRAMMABLE MULTI-TONE TELEPHONE RINGER G E N E R A L D ESC R IPTIO N The PCD3360 is a CMOS integrated circuit, designed to replace the electro-mechanical bell in telephone
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PCD3360
PCD3360
PCDM360
BST72A
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Datenbuch
Abstract: Raupenhaus hermsdorf VEB Halbleiterbauelemente thermistore Scans-048 Frankfurt Oder LB1201 DSAGER0002 Thermistor 15k
Text: I I i n □ electronic Hinweis: Die Daten von Dioden und Transistoren aus dieser Unterlage sind bereits in anderen Datenbüchern des Raupenhauses enthalten. Deshalb wurde aus diesem Buch nur der Teil "Halbleiter-Widerstände" entnommen. Halbleiter-Bauelemente
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K1HC
Abstract: FVT6
Text: HD66300T-Horizontal Driver for TFT-Type LCD Color TV PRELIMINARY D escription The HD66300T is a horizontal driver used for TFTtype Thin Film Transistor L C D color TVs. Specifi cally, it drives thedrainbussignalsofaTFT-type L C D panel. The HD66300T receives as input tjiree video signals R,
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HD66300T------------Horizontal
HD66300T
HD66300T
K1HC
FVT6
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3904S
Abstract: wi fi marking code transistor HK
Text: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)
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3904S
100mA
3906S
VPS05604
EHA07178
Q62702-A1201
OT-363
3904S
wi fi
marking code transistor HK
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AH5E
Abstract: ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262
Text: NEC - f — S 7 • Ss— K Compound Transistor FA1A4P 'J □ > S#lF*3ìScNPN:i: f t W t 'iM i ^ m m l R i = 10 kQ , R 2 = 47 kQ ) 2 .8 + 0.2 0.65—8; i s 1.5 O F N 1 A 4 P t => > 7 ° ' ) 9 y 9 ') T l È f f l T 'è i t . II s zj u 9 9 •^ - x f S i ' I E
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PWS10
AH5E
ic 3773
g0532
JE 33
T108
marking "l34"
AH-045
fI0262
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fqmb
Abstract: LD 25 V BUK793-60A philips ah 686
Text: Philips Components Data sheet status P re lim in a ry s p e c ific a tio n date of issue PHILIPS March 1991 BUK793-60A PowerMOS transistor SensorFET INTERNATIONAL SbE ]> Li GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a
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BUK793-60A
711Gfl5b
00MM747
BUK793-60A
711DflEb
fqmb
LD 25 V
philips ah 686
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2SD1491
Abstract: S0426 14s6 RL-50 m1.0425 l0897 u236
Text: NEC Silicon Power Transistor r - 2SD1491Ü 3 ^ ; •X ; y 4 * - K, ’T — K r f êï f é v u / >f ^ # T H i “ - ' . } ; « *HB0 JÊfi! 1mm h > F m) uv h 7 ^ r 8.5 M A X . m i t M t « 2.8 M A X . ~4> 3 2 ± o i t ' t c CM % ft o +1 I T K i t i 7 ) T 'i a ,
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2SD1491
PTlTa-25
2SD1491
S0426
14s6
RL-50
m1.0425
l0897
u236
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SV3a
Abstract: WSOP 48 socket 0B 2262 20-PIN LZ21N3V LZ21N3VS SV-3A
Text: SHARP LZ21N3V/VS L Z 21N 3V /V S 1/2-type Interline Color CCD Area Sensors with 2 140 k Pixels DESCRIPTION PIN CONNECTIONS The LZ21N3V/VS are 1/2-type 8.08 mm solid- TOP VIEW 20 -P IN H A L F -P IT C H W D IP state image sensors that consist of PN photo
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LZ21N3V/VS
LZ21N3V/VS
SV3a
WSOP 48 socket
0B 2262
20-PIN
LZ21N3V
LZ21N3VS
SV-3A
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xeh 250 120
Abstract: T108 TC-6056 UUJK
Text: 5 ; . = /— 1^. ~J— NEC m Com pound Transistor FAI L4Z ty - ÌV - • m m $ f t o^qrxffi^^lLtv^tc ( R x= 4 7 2.8 + 0.2 0.651 1.5 kQ) O E o F N 1 L 4 Z =? > 7 ° t (T a Il U / = > 9 ]) X i t m T ' è £-?< 25 °C ) h& ^r # Se VcBO te 60 V Marking Z JU 9 9 ' ^ - l " / 9 f f J M E
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PWS10
xeh 250 120
T108
TC-6056
UUJK
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PDF
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rkm 33 transistor
Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.
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FMA10A
FMA11A
IMB10A
IMB11A
IMB16
IMB17A
IMD10A
IMD14
IMD16A
IMH10A
rkm 33 transistor
bkd transistor
DTD133HKA
BKD C6
DTB133HKA
Transistor BJD
2SA1885
rkm 20 transistor
2SC5274
rkm transistor
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