FLL800IQ-2C
Abstract: No abstract text available
Text: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that
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FLL800IQ-2C
FLL800IQ-2C
FCSI1199M200
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FLL800IQ-2C
Abstract: No abstract text available
Text: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that
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FLL800IQ-2C
FLL800IQ-2C
FCSI1199M200
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FLM3439-4F
Abstract: No abstract text available
Text: FLM3439-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω
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FLM3439-4F
-46dBc
FLM3439-4F
FCSI1199M200
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FLL600IQ-2C
Abstract: No abstract text available
Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that
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FLL600IQ-2C
FLL600IQ-2C
FCSI1199M200
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FLL1500IU-2C
Abstract: No abstract text available
Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that
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FLL1500IU-2C
FLL1500IU-2C
FCSI1199M200
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12R05
Abstract: imt 901 FLL1500IU-2C
Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that
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FLL1500IU-2C
FLL1500IU-2C
FCSI1199M200
12R05
imt 901
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FLM3439-25F
Abstract: No abstract text available
Text: FLM3439-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω
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FLM3439-25F
-46dBc
FLM3439-25F
FCSI1199M200
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FLL600IQ-2C
Abstract: Fujitsu GaAs FET Amplifier
Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that
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FLL600IQ-2C
FLL600IQ-2C
FCSI1199M200
Fujitsu GaAs FET Amplifier
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FLM3439-12F
Abstract: No abstract text available
Text: FLM3439-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω
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FLM3439-12F
-46dBc
FLM3439-12F
FCSI1199M200
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FLM3439-18F
Abstract: No abstract text available
Text: FLM3439-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω
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FLM3439-18F
-46dBc
FLM3439-18F
FCSI1199M200
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