Untitled
Abstract: No abstract text available
Text: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC
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FMM5815X
5-20GHz
31dBm
FMM5815X
the17
FCSI0601M200
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DC TO 20GHZ RF AMPLIFIER MMIC
Abstract: fujitsu power amplifier GHz MMIC AMPLIFIER 6-20 GHZ
Text: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC
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Original
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PDF
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FMM5815X
5-20GHz
31dBm
FMM5815X
the17
FCSI0601M200
DC TO 20GHZ RF AMPLIFIER MMIC
fujitsu power amplifier GHz
MMIC AMPLIFIER 6-20 GHZ
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Untitled
Abstract: No abstract text available
Text: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC
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Original
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PDF
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FMM5815X
5-20GHz
31dBm
FMM5815X
the17
FCSI0601M200
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FLM1314-8F
Abstract: No abstract text available
Text: FLM1314-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω
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FLM1314-8F
-45dBc
FLM1314-8F
FCSI0601M200
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