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    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> p » , , . * * '* “ " * ' ' M G F C 4 0 V 4 4 S 0 A 4 .4 —5.0G H z BAND 1 0W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 4 4 5 0 A is an in te rn a lly im p e d a n c e -m a tc h e d GaA s p o w e r F E T especially designed fo r use in 4 .4 ~ 5 .0


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