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    XOAC

    Abstract: Capacitate CMOS/Transceiver xtal 32.768 DS26 SO20 XE1209 FC D0205 F1872
    Text: Datasheet XE1209 Ultra Low Power CMOS Transceiver XE1209 30 – 70 kHz Ultra Low Power CMOS Transceiver GENERAL DESCRIPTION KEY FEATURES The XE1209 is a CMOS Ultra Low-Power transceiver for short-range low frequency RF data communications system. It uses 2-level


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    PDF XE1209 XE1209 D0205-51 XOAC Capacitate CMOS/Transceiver xtal 32.768 DS26 SO20 FC D0205 F1872

    434 mhz xtal oscillator

    Abstract: No abstract text available
    Text: IAmp VDD VDDA QAMP IAMP VDDP VDDF VDDD Preliminary Data Sheet XE1202 QAmp SCAN I BPF AMP Limiter AMP DCLK RFA FSK Demod. LNA RFB Bit Sync. DATAOUT Q AMP BPF Limiter AMP Pattern Recognition LO Buff. Phase Shifter PATTERN FEI RSSI MODE 0 MODE 1 Prog. divider


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    PDF XE1202 433MHz 868MHz 915MHz XX/D0205-105 434 mhz xtal oscillator

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 12062/A International S R ectifier s d io 3n /r s e rie s FAST RECOVERY DIODES Stud Version Features • H igh p o w e r F A S T re c o v e ry d io d e s e rie s ■ 1.0 to 2 .0 ps re c o v e ry tim e ■ H igh v o lta g e ra tin g s up to 2 5 0 0 V


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    PDF 12062/A D0-30 D-608 SD103N/R D-609

    c776

    Abstract: IRGKI090U06 irgki C776 Y
    Text: bitemational r k ]Rectifier PD-9.962B IRGKI090U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT Low Side Switch O3 V CE = 600V •Rugged Design •Simple gate-drive .Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


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    PDF IRGKI090U06 25KHz 100KHz C-775 IRGKI090U06 IOO11H C-776 5S455 002G5bb c776 irgki C776 Y

    FAH diode

    Abstract: D617 M/diode fah 23
    Text: Bulletin 12063/A bitemational I»i]Rectifier SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features • High pow er FAST recovery diode series ■ 1.0 to 1.5 ps recovery tim e ■ High voltage ratings up to 1600V ■ High current capability ■ O ptim ized turn on and turn o ff ch a ra cte ristics


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    PDF 12063/A SD153N/R SD153N/R. D-616 D-617 FAH diode D617 M/diode fah 23

    1E8D

    Abstract: International rectifier thyristor manual C150 SCR D1N5401 single phase half bridge controlled rectifier scr S52K ST200S SCR firing inverter circuit 4 SCR firing 1N2069
    Text: Power Modules Designer's Manual Additional Products From International Rectifier The following is an abridged section that features other International Rectifier power sem iconductor products not covered in this Power Modules Designer's Manual. Individual data sheets offering complete technical data on


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    PDF IRFK2D054 IRFK2D150 IHFK2D25G IRFK2D350 IHFK2D450 IHFK2DC50 IHFK2DE50 1N2069/71 1N4001/7 1N4816/22 1E8D International rectifier thyristor manual C150 SCR D1N5401 single phase half bridge controlled rectifier scr S52K ST200S SCR firing inverter circuit 4 SCR firing 1N2069

    D634

    Abstract: d632 D-629 d633 d631
    Text: Bulletin 12065/A International [ürç]Rectifier SD253N/R SERIES FAST RECOVERY DIODES Stud Version Features • High power FAST recovery diode series ■ 1.5 to 2.0 ps recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn ofl characteristics


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    PDF 12065/A SD253N/R D-634 20Joules D-635 D634 d632 D-629 d633 d631

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA INTELLIGENT GTR MODULE MIG30J103H High Power Switching Applications Motor Control Applications • Intelligent GTR Module that Include IGBT drive circuits, overcurrent, undervoltage lockout, and overtemperature protection. • The Electrodes areIsolated from case.


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    PDF MIG30J103H 2-99E1A X100A)

    "jis d 0205"

    Abstract: JISD0203 JIS D1601 01 k2202 K6301 JIS-K6301 13m43 JIS D 1601 JIS-C-3406 XMJA
    Text: t l f c a /'Electronicst/ a m p 108-5355 DesiS" Objectives 09 Oct 03 Rev. B AMP-ECONOSEAL—J Mark II * Sensor Connector m y is-ju j Following first 17 pages are English version and last 13 pages are Japanese version. This top sheet is not part of the specification but explains both of English and


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    PDF FJAO-0602-03 TZS22" TZS22Â "jis d 0205" JISD0203 JIS D1601 01 k2202 K6301 JIS-K6301 13m43 JIS D 1601 JIS-C-3406 XMJA

    Untitled

    Abstract: No abstract text available
    Text: PIC16C7X M ic r o c h ip 8-Bit CMOS Microcontrollers with A/D Converter • Wide operating voltage range: 2.5V to 6.0V D evices included in th is d ata sheet: • PIC16C72 PIC16C74A • High Sink/Source Current 25/25 mA • PIC16C73 PIC16C76 • Commercial, Industrial and Extended temperature


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    PDF PIC16C7X PIC16C72 PIC16C74A PIC16C73 PIC16C76 PIC16C73A PIC16C77 PIC16C74 PIC16C7X DS30390E-page

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    Untitled

    Abstract: No abstract text available
    Text: IBM2520L8767 Preliminary ATM Resource Manager Features other uses DRAM devices. A single array of memory can be used in systems whose sus­ tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications. • Configurable for sustained performance of up to


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    PDF IBM2520L8767 102Mb/s. 400Mb/s chapt07

    abb ac drive circuit diagram

    Abstract: No abstract text available
    Text: DATASHEET PM PMC-971154 ISSUE 5 p r e li m in a r y STANDARD PRODUCT | ^ I \ # I • PMC-Sierra, Inc. PM7324 sajni-a t l a s S/UNI-A TM LA YER SOLUTION PM7324 S/UNI-ATLAS SATURN USER NETWORK INTERFACE ATM LAYER SOLUTION DATASHEET PRELIMINARY ISSUE 5: JAN 1999


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    PDF PMC-971154 PM7324 PM7324 DGED144 31x31 1D04111 D05DLD3 abb ac drive circuit diagram