K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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HYB25L512160AC
Abstract: HYE25L512160AC
Text: Data Sheet, Rev. 1.3, April 2004 HYB25L512160AC–7.5 512MBit Mobi le- RAM S t an d a r d T e m p e r at u r e R an g e M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice. Edition 2004-04
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HYB25L512160AC
512MBit
10212003-BSPE-77OL
P-TFBGA-54-2
MO207G
FBGA-54
HYE25L512160AC
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Untitled
Abstract: No abstract text available
Text: Internet Data Sheet, Rev. 1.42, November 2004 HYB25L512160AC–7.5 512MBit Mobile-RAM Standard Temperature Range Memory Products N e v e r sto p th in k in g . The information in this document is subject to change without notice. Edition 2004-11 Published by Infineon Technologies AG,
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HYB25L512160ACâ
512MBit
03292006-4N9G-9Z8W
FBGA-54
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25l512
Abstract: 25L5121 HYB25L512160AC HYE25L512160AC 25l51216
Text: D a t a S he et , R e v . 1 . 2 , F e b . 2 00 4 HYB25L512160AC–7.5 HYE25L512160AC–7.5 512MBit Mobi le- RAM S t an d a r d T e m p e r at u r e R an g e E x t en d e d T e m p e r a t u r e R a n g e M e m or y P r o du c t s N e v e r s t o p t h i n k i n g .
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HYB25L512160AC
HYE25L512160AC
512MBit
10212003-BSPE-77OL
25L512160AC
P-TFBGA-54-2
MO207G
FBGA-54
25l512
25L5121
25l51216
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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Untitled
Abstract: No abstract text available
Text: Data Sheet, V2.3, April 2005 HYE18P32160AF-15 32M Synchronous Burst CellularRAM CellularRAM Memory Products N e v e r s t o p t h i n k i n g . Data Sheet, V2.3, April 2005 HYE18P32160AF-15 32M Synchronous Burst CellularRAM CellularRAM Memory Products N e v e r
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HYE18P32160AF-15
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SMD MARKING CODE A20
Abstract: ic DPD SCR FIR 3 D A22 SMD MARKING CODE A22 SMD CODE SCR IC CHIP smd transistor marking A11 smd code marking A8 diode smd diode code WP SMD MARKING CODE A12
Text: Data Sheet, V1.5, May 2005 HYE18P128160AF-9.6 HYE18P128160AF-12.5 HYE18P128160AF-15 S y n c h r o n o u s B u r s t C e l l u l a r R A M TM 1 . 5 G CellularRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-5 Published by Infineon Technologies AG,
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HYE18P128160AF-9
HYE18P128160AF-12
HYE18P128160AF-15
0002H
0000B
0001B
0010B
0011B
00010B
SMD MARKING CODE A20
ic DPD
SCR FIR 3 D
A22 SMD MARKING CODE
A22 SMD CODE
SCR IC CHIP
smd transistor marking A11
smd code marking A8 diode
smd diode code WP
SMD MARKING CODE A12
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Untitled
Abstract: No abstract text available
Text: 2F., No.512, Sianjheng 2nd Rd., Chu-Pei City, Hsinchu County, Taiwan 302, ROC TEL: +886-3-5585138 FAX:+886-3-5585139 New Product Release Part No: EM48BM1684LBB This is to notify our valuable customers that EOREX had launched its new version device for 32M*16 Mobile
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EM48BM1684LBB
FBGA-54Ball
EM48BM1684LBB,
EM48BM1684LBB
EM48BM1684LBA.
EM48BM1684LBA)
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Untitled
Abstract: No abstract text available
Text: EM48BM1684LBC Revision History Revision 0.1 Jun. 2012 First release. www.eorex.com Jun. 2012 1/20 EM48BM1684LBC 512Mb (8Mx4Bank×16) Mobile Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge The EM48BM1684LBC is Mobile Synchronous
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EM48BM1684LBC
512Mb
EM48BM1684LBC
133/166MHz
512Mb
FBGA-54B
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Untitled
Abstract: No abstract text available
Text: 2F., No.512, Sianjheng 2nd Rd., Chu-Pei City, Hsinchu County, Taiwan 302, ROC TEL: +886-3-5585138 FAX:+886-3-5585139 New Product Release Part No: EM48AM1684VBE This is to notify our valuable customers that EOREX had launched its new version device for 16M*16 SDRAM
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EM48AM1684VBE
FBGA-54ball
EM48AM1684VBE,
EM48AM1684VBE
54ball
EM48AM1684VBD.
EM48AM1684VBD:
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512m pc133 SDRAM DIMM
Abstract: TSOP 66 Package TSOP 54 Package DIMM DDR400 PC3200 1 gb ddr2 ram DDR400 infineon HYF33DS512800ATC 16M x 16 DDR TSOP-66 P-TSOPI-48 infineon twinflash
Text: Product Information 2004 MEMORY SPECTRUM w w w. i n f i n e o n . c o m / m e m o r y w w w. i n f i n e o n . c o m / m e m o r y / f l a s h Never stop thinking. Introduction A P R I L 2 0 0 4 . This edition of Memory Spectrum has been developed to enable you to easily view the entire range of Infineon’s memory products.
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DDR400
PC3200)
B166-H8399-X-X-7600
512m pc133 SDRAM DIMM
TSOP 66 Package
TSOP 54 Package
DIMM DDR400 PC3200
1 gb ddr2 ram
DDR400 infineon
HYF33DS512800ATC
16M x 16 DDR TSOP-66
P-TSOPI-48
infineon twinflash
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q1257
Abstract: Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66
Text: 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 1 Product Information 2003 / 2004 DRAM SPECTRUM www.infineon.com Never stop thinking. 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 2 Introduction September 2003. This edition of the DRAM Spectrum has been developed
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2002791-D-RAM
hoch17
DDR400
PC3200)
B112-H6731-G10-X-7600
q1257
Q1129
Q4331
TSOP66
Q4311
tsop 4021
tsop ddr2 ram
DDR RAM 512M
DRAM spectrum infineon
TSOP-66
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EM48BM1684LBC
Abstract: No abstract text available
Text: EM48BM1684LBC Revision History Revision 0.1 Jun. 2012 First release. Jun. 2012 www.eorex.com 1/20 EM48BM1684LBC 512Mb (8M4Bank16) Mobile Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge The EM48BM1684LBC is Mobile Synchronous
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EM48BM1684LBC
512Mb
EM48BM1684LBC
133/166MHz
512Mb
FBGA-54B
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smd diode SL V2
Abstract: HYE18P32160AC
Text: Da t a S h e e t , V2 . 0 , D ec e m b e r 2 0 0 3 H Y E 1 8 P 3 2 1 6 0 A C - /L 9 . 6 H Y E 1 8 P 3 2 1 6 0 A C ( - /L ) 1 2 . 5 H Y E 1 8 P 3 2 1 6 0 A C ( - /L ) 1 5 3 2 M Sy n ch r o n o u s Bu r st C e ll u la r R AM C e ll u la r R AM M e m o r y P r o d u c ts
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K5W1G
Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION
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BR-07-ALL-001
K5W1G
KMCME0000M-B998
k9hbg08u1m
K9MCG08U5M
K5E1257ACM
MC4GE04G5APP-0XA
b998
KMCME0000M
hd161hj
K5D1G
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NORFLASH
Abstract: ic DPD HYE18P32160AC
Text: HYE18P32160AC-9.6/-15 Graphics & Specialty Memories 32M Sync Burst CellularRAM Version 1.8 06.2003 HYE18P32160AC-9.6/-15 32M Sync Burst CellularRAM Revision History – V1.4, 10/01 Asynchronous SRAM interface, low power features TCSR, PASR , 1.8V single power
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HYE18P32160AC-9
FBGA-48
FBGA-56
48-ball
56-ball
NORFLASH
ic DPD
HYE18P32160AC
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Untitled
Abstract: No abstract text available
Text: HYB25L512160AC-7.5 HYE25L512160AC-7.5 DRAMs for Mobile Applications 512 Mbit Mobile-RAM Two 256 MBit Mobile-RAMs stacked in Multi-Chip Package 3UHOLPLQDU\ 'DWDVKHHW Revision 1.0 12.2002 +<%( /$& 0ELW 0RELOH5$0 SrvvÃCv
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HYB25L512160AC-7
HYE25L512160AC-7
P-TFBGA-54-2
MO207G
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A19 SMD transistor
Abstract: HYE18P32160AC HYE18P32160AW-15
Text: Data Sheet, V2.2, July 2004 HYE18P32160AW-12.5 HYE18P32160AW-15 32M Synchronous Burst CellularRAM CellularRAM Memory Products N e v e r s t o p t h i n k i n g . Data Sheet, V2.2, July 2004 HYE18P32160AW-12.5 HYE18P32160AW-15 32M Synchronous Burst CellularRAM
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HYE18P32160AW-12
HYE18P32160AW-15
A19 SMD transistor
HYE18P32160AC
HYE18P32160AW-15
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HYB25L512160AC
Abstract: HYE25L512160AC
Text: D at a s h ee t , R ev . 1 . 42 , N ov e m be r 2 00 4 HYB25L512160AC–7.5 512MBit Mobi le- RAM S t an d a r d T e m p e r at u r e R an g e M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice.
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HYB25L512160AC
512MBit
10212003-BSPE-77OL
FBGA-54
HYE25L512160AC
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Untitled
Abstract: No abstract text available
Text: HYB25L512160AC-7.5 HYE25L512160AC-7.5 DRAMs for Mobile Applications 512 Mbit Mobile-RAM Two 256 MBit Mobile-RAMs stacked in Multi-Chip Package 3UHOLPLQDU\ 'DWDVKHHW Revision 1.1 01.2003 +<%( /$& 0ELW 0RELOH5$0 SrvvÃCv
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HYB25L512160AC-7
HYE25L512160AC-7
P-TFBGA-54-2
MO207G
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