Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FAST SWITCHING MOSFET IPP Search Results

    FAST SWITCHING MOSFET IPP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    FAST SWITCHING MOSFET IPP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IPP50R280Ce

    Abstract: IPD50R1K4CE IPD50R380CE IPD50R800CE
    Text: Product Brief Features 500V CoolMOS CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction SJ principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not


    Original     		PDF

    034N03L

    Abstract: IEC61249-2-21 JESD22 DSV60
    Text: IPP034N03L G Type IPB034N03L G !"#$%!& 3 Power-Transistor Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 3.4 mW • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP034N03L IPB034N03L IEC61249-2-21 PG-TO220-3-1 PG-TO263-3 034N03L 034N03L IEC61249-2-21 JESD22 DSV60

    IEC61249-2-21

    Abstract: JESD22 080N03L
    Text: IPP080N03L G Type IPB080N03L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 8.0 mΩ ID 50 A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP080N03L IPB080N03L IEC61249-2-21 PG-TO220-3-1 PG-TO263-3 080N03L IEC61249-2-21 JESD22 080N03L

    041N04N

    Abstract: IPB041N04N G V150-4
    Text: IPP041N04N G Type IPB041N04N G !"#$%!& 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 4.1 mW • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP041N04N IPB041N04N IEC61249-2-21 PG-TO263-3 041N04N PG-TO220-3 041N04N IPB041N04N G V150-4

    096N03L

    Abstract: JESD22 PG-TO220-3
    Text: IPP096N03L G Type IPB096N03L G OptiMOS 3 Power-Transistor Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 9.6 m: • Optimized technology for DC/DC converters ID 35 A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP096N03L IPB096N03L PG-TO220-3 PG-TO263-3 096N03L 096N03L JESD22 PG-TO220-3

    JESD22

    Abstract: PG-TO220-3 055N03L
    Text: IPP055N03L G Type IPB055N03L G OptiMOS 3 Power-Transistor Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 5.5 m: • Optimized technology for DC/DC converters ID 50 A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP055N03L IPB055N03L PG-TO220-3 PG-TO263-3 055N03L JESD22 PG-TO220-3 055N03L

    042n03l

    Abstract: JESD22 PG-TO220-3
    Text: IPP042N03L G Type IPB042N03L G OptiMOS 3 Power-Transistor Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 4.2 m: • Optimized technology for DC/DC converters ID 70 A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP042N03L IPB042N03L PG-TO220-3 PG-TO263-3 042N03L 042n03l JESD22 PG-TO220-3

    065N03L

    Abstract: IPP065N03L JESD22 PG-TO220-3
    Text: IPP065N03L G Type IPB065N03L G OptiMOS 3 Power-Transistor Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 6.5 m: • Optimized technology for DC/DC converters ID 50 A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP065N03L IPB065N03L PG-TO220-3 PG-TO263-3 065N03L 065N03L JESD22 PG-TO220-3

    055N03L

    Abstract: IEC61249-2-21 JESD22
    Text: IPP055N03L G Type IPB055N03L G !"#$%!& 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5.5 mW ID 50 A 1) • Qualified according to JEDEC for target applications


    Original     		PDF IPP055N03L IPB055N03L IEC61249-2-21 PG-TO220-3-1 PG-TO263-3 055N03L 055N03L IEC61249-2-21 JESD22

    147N03L

    Abstract: JESD22 PG-TO220-3 IPP147N03L
    Text: IPP147N03L G Type IPB147N03L G OptiMOS 3 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS R DS on ,max • Optimized technology for DC/DC converters ID 30 14.7 20 V m: A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP147N03L IPB147N03L PG-TO220-3 PG-TO263-3 147N03L 147N03L JESD22 PG-TO220-3

    080n03l

    Abstract: IEC61249-2-21 JESD22 ipp080n03l
    Text: IPP080N03L G Type IPB080N03L G !"#$%!& 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 8.0 mW ID 50 A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP080N03L IPB080N03L IEC61249-2-21 PG-TO220-3-1 PG-TO263-3 080N03L 080n03l IEC61249-2-21 JESD22

    034n03l

    Abstract: IPP034N03L G JESD22 PG-TO220-3
    Text: IPP034N03L G Type IPB034N03L G OptiMOS 3 Power-Transistor Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 3.4 m: • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP034N03L IPB034N03L PG-TO220-3 PG-TO263-3 034N03L 034n03l IPP034N03L G JESD22 PG-TO220-3

    114N03L

    Abstract: JESD22 PG-TO220-3
    Text: IPP114N03L G Type IPB114N03L G OptiMOS 3 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS R DS on ,max • Optimized technology for DC/DC converters ID 30 11.4 30 V m: A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP114N03L IPB114N03L PG-TO220-3 PG-TO263-3 114N03L 114N03L JESD22 PG-TO220-3

    080N03L

    Abstract: JESD22 PG-TO220-3
    Text: IPP080N03L G Type IPB080N03L G OptiMOS 3 Power-Transistor Product Summary Features …. V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 8.0 m: • Optimized technology for DC/DC converters ID 50 A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP080N03L IPB080N03L PG-TO220-3 PG-TO263-3 080N03L 080N03L JESD22 PG-TO220-3

    041N04N

    Abstract: IPP041N04N IEC61249-2-21 JESD22 PG-TO220-3
    Text: IPP041N04N G Type IPB041N04N G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 4.1 mΩ • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP041N04N IPB041N04N IEC61249-2-21 PG-TO263-3 PG-TO220-3 041N04N 041N04N IEC61249-2-21 JESD22 PG-TO220-3

    IPP015N04N

    Abstract: IPB015N04N IPB015N04 IEC61249-2-21 JESD22 PG-TO220-3 IPP015N04N G IPB015N04N G 015N04N
    Text: IPP015N04N G Type IPB015N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications


    Original     		PDF IPP015N04N IPB015N04N IEC61249-2-21 PG-TO263-3 PG-TO220-3 015N04N IPB015N04 IEC61249-2-21 JESD22 PG-TO220-3 IPP015N04N G IPB015N04N G 015N04N

    042N03L

    Abstract: IEC61249-2-21 JESD22 IPB042N03L
    Text: IPP042N03L G Type IPB042N03L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 4.2 mΩ ID 70 A 1) • Qualified according to JEDEC for target applications


    Original     		PDF IPP042N03L IPB042N03L IEC61249-2-21 PG-TO220-3-1 PG-TO263-3 042N03L 042N03L IEC61249-2-21 JESD22

    055N03L

    Abstract: IEC61249-2-21 JESD22
    Text: IPP055N03L G Type IPB055N03L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5.5 mΩ ID 50 A 1) • Qualified according to JEDEC for target applications


    Original     		PDF IPP055N03L IPB055N03L IEC61249-2-21 PG-TO220-3-1 PG-TO263-3 055N03L 055N03L IEC61249-2-21 JESD22

    034n03l

    Abstract: No abstract text available
    Text: IPP034N03L G Type IPB034N03L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 3.4 mΩ ID 80 A 1) • Qualified according to JEDEC for target applications


    Original     		PDF IPP034N03L IPB034N03L PG-TO220-3-1 034N03L PG-TO263-3 034n03l

    015N04N

    Abstract: No abstract text available
    Text: IPP015N04N G Type IPB015N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications


    Original     		PDF IPP015N04N IPB015N04N PG-TO263-3 015N04N PG-TO220-3 015N04N

    Untitled

    Abstract: No abstract text available
    Text: IPP055N03L G Type IPB055N03L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5.5 mΩ ID 50 A 1) • Qualified according to JEDEC for target applications


    Original     		PDF IPP055N03L IPB055N03L PG-TO220-3-1 PG-TO263-3 055N03L

    147N03L

    Abstract: IPB147N03L
    Text: IPP147N03L G Type IPB147N03L G OptiMOS 3 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for DC/DC converters 14.7 ID 20 V mΩ A 1) • Qualified according to JEDEC for target applications


    Original     		PDF IPP147N03L IPB147N03L PG-TO220-3-1 147N03L PG-TO263-3 147N03L

    039N04L

    Abstract: IEC61249-2-21 IPB039N04L IPP039N04L JESD22 PG-TO220-3
    Text: IPP039N04L G Type IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 3.9 mΩ ID 80 A 1) • Qualified according to JEDEC for target applications


    Original     		PDF IPP039N04L IPB039N04L IEC61249-2-21 PG-TO263-3 PG-TO220-3 039N04L 039N04L IEC61249-2-21 JESD22 PG-TO220-3

    IPP015N04N

    Abstract: 015N04N IPB015N04N JESD22 PG-TO220-3
    Text: IPP015N04N G Type IPB015N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications


    Original     		PDF IPP015N04N IPB015N04N PG-TO263-3 PG-TO220-3 015N04N 015N04N JESD22 PG-TO220-3