Untitled
Abstract: No abstract text available
Text: ISL9R3060G2_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=102ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications.The Stealth™ family exhibits low reverse recovery current
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ISL9R3060G2
102ns
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: ISL9R3060G2_F085 30A, 600V Stealth Rectifier Features 30A, 600V Stealth Rectifier • High Speed Switching trr=31ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications.
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ISL9R3060G2
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Untitled
Abstract: No abstract text available
Text: RHRG3060_F085 30A, 600V Hyperfast Rectifier Features Max Ratings 600V, 30A • High Speed Switching ( trr=45ns(Typ.) @ IF=30A ) The RHRG3060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride
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RHRG3060
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HFA16PB120
Abstract: HFA30PB120 IRFP250
Text: PD -2604A HFA30PB120 Ultrafast, Soft Recovery Diode HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and
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-2604A
HFA30PB120
120nC
O-247AC
HFA16PB120
12-Mar-07
HFA30PB120
IRFP250
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HFA16PB120
Abstract: IRFP250 HFA30PB120PBF
Text: PD -95686A HFA30PB120PbF Ultrafast, Soft Recovery Diode HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI
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-95686A
HFA30PB120PbF
120nC
O-247AC
HFA16PB120
12-Mar-07
IRFP250
HFA30PB120PBF
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Untitled
Abstract: No abstract text available
Text: RURG3060CC_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an dual ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.
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RURG3060CC
RURG3060
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Untitled
Abstract: No abstract text available
Text: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr< 80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.
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Untitled
Abstract: No abstract text available
Text: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is
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RURG3060
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HFA30TA60C
Abstract: HFA16TA60C IRFP250 vishay transistor date code dt2 marking code
Text: PD-95689 HFA30TA60CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI
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PD-95689
HFA30TA60CPbF
HFA30TA60C
12-Mar-07
HFA16TA60C
IRFP250
vishay transistor date code
dt2 marking code
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HFA15TB60S
Abstract: IRFP250
Text: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free
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PD-96033
HFA15TB60SPbF
HFA15TB60S
12-Mar-07
IRFP250
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HFA16TA60C
Abstract: HFA30TA60C
Text: PD-95689 HFA30TA60CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI
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PD-95689
HFA30TA60CPbF
HFA30TA60C
08-Mar-07
HFA16TA60C
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ST hexfet to 247
Abstract: anode common fast recovery diode 15A 200V HFA30PA60C
Text: Bulletin PD -2.336 rev. C 05/01 HFA30PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.2V IF(AV) = 15A Qrr (typ.)= 80nC
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HFA30PA60C
HFA30PA60C
12-Mar-07
ST hexfet to 247
anode common fast recovery diode 15A 200V
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90041
Abstract: IRCZ34
Text: PD - 9.590A IRCZ34 HEXFET Power MOSFET l l l l l l Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 60V RDS on = 0.050Ω ID = 30A Description Third Generation HEXFETs from International Rectifier provide the designer with
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IRCZ34
12-Mar-07
90041
IRCZ34
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HFA15PB60
Abstract: 94052 IRFP250
Text: PD - 95681A HFA15PB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 CATHODE Reduced RFI and EMI
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5681A
HFA15PB60PbF
HFA15PB60
12-Mar-07
94052
IRFP250
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AN-994
Abstract: IRFZ34 IRFZ34L IRFZ34S
Text: PD - 9.892A IRFZ34S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ34S Low-profile through-hole (IRFZ34L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description Third Generation HEXFETs from International Rectifier
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IRFZ34S/L
IRFZ34S)
IRFZ34L)
12-Mar-07
AN-994
IRFZ34
IRFZ34L
IRFZ34S
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"Power Diode" 200V 30A
Abstract: HFA30TA60CS IRFP250 93092
Text: Bulletin PD-20374 01/01 HFA30TA60CS HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V 2 Features • • • • • VF typ. * = 1.2V IF(AV) = 15A Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Qrr (typ.)= 80nC
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PD-20374
HFA30TA60CS
HFA30TA60CS
12-Mar-07
"Power Diode" 200V 30A
IRFP250
93092
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HFA15TB60PBF
Abstract: HFA15TB60 HFA06TB120 HFA15TB60-1 IRFP250 vishay transistor date code IR HFA15TB60
Text: PD-95738 HFA15TB60PbF HFA15TB60-1 Ultrafast, Soft Recovery Diode HEXFRED TM Features VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs
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PD-95738
HFA15TB60PbF
HFA15TB60-1
HFA15TB60
12-Mar-07
HFA15TB60PBF
HFA06TB120
HFA15TB60-1
IRFP250
vishay transistor date code
IR HFA15TB60
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HFA30TA60CS
Abstract: IRFP250 hfa30ta60cspbf
Text: PD-96032 HFA30TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features VR = 600V VF typ. * = 1.2V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free IF(AV) = 15A Qrr (typ.)= 80nC
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PD-96032
HFA30TA60CSPbF
HFA30TA60CS
12-Mar-07
IRFP250
hfa30ta60cspbf
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HFA15TB60S
Abstract: IRFP250 SMD-220 MAR 618 transistor
Text: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation
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PD-20615
HFA15TB60S
HFA15TB60S
12-Mar-07
IRFP250
SMD-220
MAR 618 transistor
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AN-994
Abstract: IRLZ34 IRLZ34L IRLZ34S
Text: PD - 9.905A IRLZ34S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRLZ34S Low-profile through-hole (IRLZ34L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description
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IRLZ34S/L
IRLZ34S)
IRLZ34L)
12-Mar-07
AN-994
IRLZ34
IRLZ34L
IRLZ34S
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Untitled
Abstract: No abstract text available
Text: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free
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PD-96033
HFA15TB60SPbF
HFA15TB60S
08-Mar-07
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N3306
Abstract: No abstract text available
Text: Fast Recovery Diode FMN-3306S Mar/21/2011 Features Package The FMN-3360S is a fast recovery diode which realize a peak reverse voltage of 600V and a typical forward voltage drop of 1.15V optimizing a tradeoff between VF and trr. It has the characteristics suit for PFC circuit of
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FMN-3306S
FMN-3360S
Mar/21/2011
100ns
N3306
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IRF035
Abstract: IRF034
Text: HE D I 4Ô55MS2 □ 0G*i02b *1 | Data Sheet No. PD-9.585A INTERNATIONAL R ECTIFIER INTERNATIONAL RECTIFIER IO R AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF034 IRFQ35 : N -C H A N N E L 60 Volt, 0.050 Ohm HEXFET TO-204AE TO-3 Hermetic Package
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55MS2
IRF034
IRFQ35
O-204AE
IRF034,
IRF035
5S452
IRF034
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A7321
Abstract: marking 2U diode diode 2U 88
Text: PD - 9.905A International IQR Rectifier IR L Z 3 4 S /L HEXFET Power MOSFET Advanced Process Technology Surface M ount IRLZ34S Low -profile through-hole (IRLZ34L) 1 75 °C O perating Tem perature Fast Switching Fully Avalanche Rated V dss = 60 V R d s (oh) = 0 .0 5 0 Î2
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IRLZ34S)
IRLZ34L)
A7321
marking 2U diode
diode 2U 88
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