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    FAST RECOVERY RECTIFIER, 30A DO-4 PACKAGE Search Results

    FAST RECOVERY RECTIFIER, 30A DO-4 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    FAST RECOVERY RECTIFIER, 30A DO-4 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fen30jp

    Abstract: FEN30FP 30JP
    Text: 30A Super Fast Recovery Rectifier FEN30FP – FEN30JP 30A Super Fast Recovery Rectifier Features • • • • • • • Glass passivated chip junction Low reverse leakage current High forward surge capability Low power loss, high efficiency Low stored charge majority carrier conduction


    Original     		PDF FEN30FP FEN30JP MIL-STD-750, fen30jp FEN30FP 30JP

    Untitled

    Abstract: No abstract text available
    Text: 30A Super Fast Recovery Rectifier FEN30AP – FEN30DP 30A Super Fast Recovery Rectifier Features • • • • • • • Glass passivated chip junction Low reverse leakage current High forward surge capability Low power loss, high efficiency Low stored charge majority carrier conduction


    Original     		PDF FEN30AP FEN30DP MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: 30A Super Fast Recovery Rectifier FEN30FP – FEN30JP 30A Super Fast Recovery Rectifier Features • • • • • • • Glass passivated chip junction Low reverse leakage current High forward surge capability Low power loss, high efficiency Low stored charge majority carrier conduction


    Original     		PDF FEN30FP FEN30JP MIL-STD-750,

    fen30dp

    Abstract: FEN30AP
    Text: 30A Super Fast Recovery Rectifier FEN30AP – FEN30DP 30A Super Fast Recovery Rectifier Features • • • • • • • Glass passivated chip junction Low reverse leakage current High forward surge capability Low power loss, high efficiency Low stored charge majority carrier conduction


    Original     		PDF FEN30AP FEN30DP MIL-STD-750, fen30dp FEN30AP

    diode RGP 30D

    Abstract: RGP30A RGP30M
    Text: 3.0A Sintered Glass Passivated Fast Recovery Rectifier RGP30A – RGP30M 3.0A Sintered Glass Passivated Fast Recovery Rectifier Features • • • • • • Sintered glass passivated SGP rectifier chip Capable of meeting environmental standards of MIL-S-19500


    Original     		PDF RGP30A RGP30M MIL-S-19500 DO-201AD DO-201AD MIL-STD-750, diode RGP 30D RGP30A RGP30M

    Untitled

    Abstract: No abstract text available
    Text: 3.0A Sintered Glass Passivated Fast Recovery Rectifier RGP30A – RGP30M 3.0A Sintered Glass Passivated Fast Recovery Rectifier Features • • • • • • GPRC glass passivated rectifier chip inside Capable of meeting environmental standards of MIL-S-19500


    Original     		PDF RGP30A RGP30M MIL-S-19500 DO-201AD DO-201AD MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: RURG3060CC_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an dual ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.


    Original     		PDF RURG3060CC RURG3060

    Untitled

    Abstract: No abstract text available
    Text: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr< 80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.


    Original     		PDF RURG3060

    Untitled

    Abstract: No abstract text available
    Text: ISL9R3060G2_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=102ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications.The Stealth™ family exhibits low reverse recovery current


    Original     		PDF ISL9R3060G2 102ns AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: RHRG3060_F085 30A, 600V Hyperfast Rectifier Features Max Ratings 600V, 30A • High Speed Switching ( trr=45ns(Typ.) @ IF=30A ) The RHRG3060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride


    Original     		PDF RHRG3060

    Untitled

    Abstract: No abstract text available
    Text: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is


    Original     		PDF RURG3060

    Untitled

    Abstract: No abstract text available
    Text: ISL9R3060G2_F085 30A, 600V Stealth Rectifier Features 30A, 600V Stealth Rectifier • High Speed Switching trr=31ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications.


    Original     		PDF ISL9R3060G2

    Untitled

    Abstract: No abstract text available
    Text: FFPF30UP20S Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 50ns @IF = 30A • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers • Switching Mode Power Supply


    Original     		PDF FFPF30UP20S O-220F

    F30UP20S

    Abstract: FFPF30UP20S FFPF30UP20STU F30UP20
    Text: FFPF30UP20S Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 50ns @IF = 30A • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers • Switching Mode Power Supply


    Original     		PDF FFPF30UP20S O-220F F30UP20S FFPF30UP20S FFPF30UP20STU F30UP20

    HFA16PB120

    Abstract: IRFP250 HFA30PB120PBF
    Text: PD -95686A HFA30PB120PbF Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions • Lead-Free Benefits • Reduced RFI and EMI


    Original     		PDF -95686A HFA30PB120PbF 120nC O-247AC HFA16PB120 12-Mar-07 IRFP250 HFA30PB120PBF

    HFA15TB60S

    Abstract: IRFP250
    Text: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free


    Original     		PDF PD-96033 HFA15TB60SPbF HFA15TB60S 12-Mar-07 IRFP250

    HFA30TA60C

    Abstract: HFA16TA60C IRFP250 vishay transistor date code dt2 marking code
    Text: PD-95689 HFA30TA60CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI


    Original     		PDF PD-95689 HFA30TA60CPbF HFA30TA60C 12-Mar-07 HFA16TA60C IRFP250 vishay transistor date code dt2 marking code

    FFPF30UP20STTU

    Abstract: No abstract text available
    Text: FFPF30UP20STTU Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 50ns @IF = 30A • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers • Switching Mode Power Supply


    Original     		PDF FFPF30UP20STTU O-220F FFPF30UP20STTU

    Untitled

    Abstract: No abstract text available
    Text: FFPF30UP20STTU Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 50ns @IF = 30A • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers • Switching Mode Power Supply


    Original     		PDF FFPF30UP20STTU O-220F

    ST hexfet to 247

    Abstract: anode common fast recovery diode 15A 200V HFA30PA60C
    Text: Bulletin PD -2.336 rev. C 05/01 HFA30PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.2V IF(AV) = 15A Qrr (typ.)= 80nC


    Original     		PDF HFA30PA60C HFA30PA60C 12-Mar-07 ST hexfet to 247 anode common fast recovery diode 15A 200V

    F30UA60S

    Abstract: FFPF30UA60S
    Text: FFPF30UA60S UItrafast Rectifier tm Features 30A, 600V Ultrafast Rectifier • Ultrafast switching, Trr < 90ns The FFPF30UA60S is ultrafast rectifier with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping rectifiers in a variety of switching


    Original     		PDF FFPF30UA60S FFPF30UA60S F30UA60S

    HFA15PB60

    Abstract: 94052 IRFP250
    Text: PD - 95681A HFA15PB60PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 CATHODE • Reduced RFI and EMI


    Original     		PDF 5681A HFA15PB60PbF HFA15PB60 12-Mar-07 94052 IRFP250

    IRF035

    Abstract: IRF034
    Text: HE D I 4Ô55MS2 □ 0G*i02b *1 | Data Sheet No. PD-9.585A INTERNATIONAL R ECTIFIER INTERNATIONAL RECTIFIER IO R AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF034 IRFQ35 : N -C H A N N E L 60 Volt, 0.050 Ohm HEXFET TO-204AE TO-3 Hermetic Package


    OCR Scan     		PDF 55MS2 IRF034 IRFQ35 O-204AE IRF034, IRF035 5S452 IRF034

    A7321

    Abstract: marking 2U diode diode 2U 88
    Text: PD - 9.905A International IQR Rectifier IR L Z 3 4 S /L HEXFET Power MOSFET Advanced Process Technology Surface M ount IRLZ34S Low -profile through-hole (IRLZ34L) 1 75 °C O perating Tem perature Fast Switching Fully Avalanche Rated V dss = 60 V R d s (oh) = 0 .0 5 0 Î2


    OCR Scan     		PDF IRLZ34S) IRLZ34L) A7321 marking 2U diode diode 2U 88